High-Performance TiN/Al2O3/ZnO/Al2O3/TiN Flexible RRAM Device With High Bending Condition von Kumar, Dayanand, Chand, Umesh, Wen Siang, Lew, Tseng, Tseung-Yuen

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ZrN-Based Flexible Resistive Switching Memory von Kumar, Dayanand, Chand, Umesh, Siang, Lew Wen, Tseng, Tseung-Yuen

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Efficient spin–orbit torque magnetization switching by reducing domain nucleation energy von Jin, Tianli, Ang, Calvin, Wang, Xuan, Siang Lew, Wen, Piramanayagam, S.N.

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Large spin Hall angle enhanced by nitrogen incorporation in Pt films von Xu, Zhan, Wong, Grayson Dao Hwee, Tang, Jiaxuan, Liu, Er, Gan, Weiliang, Xu, Feng, Lew, Wen Siang

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The influence of Ti ultrathin insertion layer on the effective magnetic damping and effective spin Hall angle von Xu, Zhan, Wong, Grayson Dao Hwee, Tang, Jiaxuan, Liu, Er, Coester, Birte, Xu, Feng, Bian, Leixiang, Lew, Wen Siang

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Emerging Non-Volatile Memory Technologies: Physics, Engineering, and Applications von Lew, Wen Siang, Lim, Gerard Joseph, Dananjaya, Putu Andhita

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Enhancement of zero-field skyrmion density in [Pt/Co/Fe/Ir]2 multilayers at room temperature by the first-order reversal curve von Ma, Mangyuan, Ang, Calvin Ching Ian, Li, Yong, Pan, Zizhao, Gan, Weiliang, Lew, Wen Siang, Ma, Fusheng

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Enhanced resistive switching characteristics of conductive bridging memory device by a Co–Cu alloy electrode von Lee, Calvin Xiu Xian, Dananjaya, Putu Andhita, Chee, Mun Yin, Poh, Han Yin, Tan, Funan, Thong, Jia Rui, Liu, Lingli, Lim, Gerard Joseph, Du, Yuanmin, Tan, Juan Boon, Lew, Wen Siang

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Reversible strain-induced spin–orbit torque on flexible substrate von Wong, Grayson Dao Hwee, Ang, Calvin Ching Ian, Gan, Weiliang, Law, Wai Cheung, Xu, Zhan, Xu, Feng, Seet, Chim Seng, Lew, Wen Siang

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A 126 μW Readout Circuit in 65 nm CMOS With Successive Approximation-Based Thresholding for Domain Wall Magnet-Based Random Number Generator von Narasimman, Govind, Basu, Joydeep, Sethi, Pankaj, Krishnia, Sachin, Yi, Chen, Siang, Lew Wen, Basu, Arindam

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Spin-orbit torque induced magnetization anisotropy modulation in Pt/(Co/Ni)4/Co/IrMn heterostructure von Engel, Christian, Goolaup, Sarjoosing, Luo, Feilong, Gan, Weiliang, Lew, Wen Siang

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Bilayer skyrmion dynamics on a magnetic anisotropy gradient von Ang, Calvin Ching Ian, Gan, Weiliang, Lew, Wen Siang

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Interface-based tuning of Rashba spin-orbit interaction in asymmetric oxide heterostructures with 3d electrons von Lin, Weinan, Li, Lei, Doğan, Fatih, Li, Changjian, Rotella, Hélène, Yu, Xiaojiang, Zhang, Bangmin, Li, Yangyang, Lew, Wen Siang, Wang, Shijie, Prellier, Wilfrid, Pennycook, Stephen J., Chen, Jingsheng, Zhong, Zhicheng, Manchon, Aurelien, Wu, Tom

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Dzyaloshinskii-Moriya interaction induced domain wall depinning anomaly in ferromagnetic nanowire von Kheng Teoh, Han, Goolaup, Sarjoosing, Siang Lew, Wen

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Magneto-optic fiber Sagnac modulator based on magnetic fluids von PENG ZU, CHI CHIU CHAN, LEW WEN SIANG, JIN, Yongxing, YIFAN ZHANG, LIEW HWI FEN, LIHAN CHEN, XINYONG DONG

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Antiferromagnetic skyrmion repulsion based artificial neuron device von Bindal, Namita, Ian, Calvin Ang Chin, Lew, Wen Siang, Kaushik, Brajesh Kumar

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Gateable Skyrmion Transport via Field-induced Potential Barrier Modulation von Fook, Hiu Tung, Gan, Wei Liang, Lew, Wen Siang

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Dependence of LET on material and its impact on current RBE model von Qi Tan, Hong, Yang Calvin Koh, Wei, Kuan Rui Tan, Lloyd, Hao Phua, Jun, Wei Ang, Khong, Yong Park, Sung, Siang Lew, Wen, Cheow Lei Lee, James

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Strain-induced degradation and recovery of flexible NbOx-based threshold switching device von Ang, Jia Min, Dananjaya, Putu Andhita, Ang, Calvin Ching Ian, Lim, Gerard Joseph, Lew, Wen Siang

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Deterministic Spin-Orbit Torque Induced Magnetization Reversal In Pt/[Co/Ni]n/Co/Ta Multilayer Hall Bars von Li, Sihua, Goolaup, Sarjoosing, Kwon, Jaesuk, Luo, Feilong, Gan, Weiliang, Lew, Wen Siang

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