Infrared erbium photoluminescence enhancement in silicon carbide nano-pillars von Parker, R. A., Dontschuk, N., Sato, S.-I., Lew, C. T.-K., Reineck, P., Nadarajah, A., Ohshima, T., Gibson, B. C., Castelletto, S., McCallum, J. C., Johnson, B. C.

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All-Electrical Readout of Coherently Controlled Spins in Silicon Carbide von Lew, C T-K, Sewani, V K, Iwamoto, N, Ohshima, T, McCallum, J C, Johnson, B C

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Enhanced magnetometry with an electrically detected spin defect ensemble in silicon carbide von Lew, C. T.-K., Sewani, V. K., Iwamoto, N., Ohshima, T., McCallum, J. C., Johnson, B. C.

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Charge pumping electrically detected magnetic resonance of silicon carbide power transistors von Lew, C. T.-K., Sewani, V. K., Ohshima, T., McCallum, J. C., Johnson, B. C.

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Characterization methods for defects and devices in silicon carbide von Bathen, M. E., Lew, C. T.-K., Woerle, J., Dorfer, C., Grossner, U., Castelletto, S., Johnson, B. C.

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Deep-Level Structure of the Spin-Active Recombination Center in Dilute Nitrides von Ulibarri, A C, Lew, C T K, Lim, S Q, McCallum, J C, Johnson, B C, Harmand, J C, Peretti, J, Rowe, A C H

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Process-induced defects in Au-hyperdoped Si photodiodes von Lim, S. Q., Lew, C. T.-K., Chow, P. K., Warrender, J. M., Williams, J. S., Johnson, B. C.

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Spatial mapping of band bending in semiconductor devices using in situ quantum sensors von Broadway, D. A., Dontschuk, N., Tsai, A., Lillie, S. E., Lew, C. T.-K., McCallum, J. C., Johnson, B. C., Doherty, M. W., Stacey, A., Hollenberg, L. C. L., Tetienne, J.-P.

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Investigation of charge carrier trapping in H-terminated diamond devices von Lew, C. T.-K., Dontschuk, N., Broadway, D. A., Tetienne, J.-P., McCallum, J. C., Hollenberg, L. C. L., Johnson, B. C.

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Toward understanding and optimizing Au-hyperdoped Si infrared photodetectors von Lim, S. Q., Lew, C. T.-K., Chow, P. K., Warrender, J. M., Williams, J. S., Johnson, B. C.

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Quantum systems in silicon carbide for sensing applications von Castelletto, S, Lew, C T-K, Lin, Wu-Xi, Xu, Jin-Shi

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Deep level transient spectroscopy study of heavy ion implantation induced defects in silicon von Lew, C. T.-K., Johnson, B. C., McCallum, J. C.

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Deep-level structure of the spin-active recombination center in dilute nitrides von Ulibarri, A C, Lew, C T K, Lim, S Q, McCallum, J C, Johnson, B C, Harmand, J C, Peretti, J, Rowe, A C H

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Piezoresistance in defect-engineered silicon von H Li, Thayil, A, Lew, C T K, Filoche, M, Johnson, B C, McCallum, J C, Arscott, S, Rowe, A C H

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Piezoresistance in Defect-Engineered Silicon von Li, H., Thayil, A., Lew, C. T. K., Filoche, M., Johnson, B. C., McCallum, J. C., Arscott, S., Rowe, A. C. H.

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Giant, Anomalous Piezoimpedance in Silicon-on-insulator von Li, H., Lew, C.T.K., Johnson, B.C., McCallum, J.C., Arscott, S., Rowe, A.C.H.

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Spatial mapping of band bending in semiconductor devices using in-situ quantum sensors von Broadway, D A, Dontschuk, N, Tsai, A, Lillie, S E, Lew, C T -K, McCallum, J C, Johnson, B C, Doherty, M W, Stacey, A, Hollenberg, L C L, J -P Tetienne

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3D-mapping and manipulation of photocurrent in an optoelectronic diamond device von Wood, A. A, McCloskey, D. J, Dontschuk, N, Lozovoi, A, Goldblatt, R. M, Delord, T, Broadway, D. A, Tetienne, J. -P, Johnson, B. C, Mitchell, K. T, Lew, C. T. -K, Meriles, C. A, Martin, A. M

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3D-mapping and manipulation of photocurrent in an optoelectronic diamond device von Wood, A A, McCloskey, D J, Dontschuk, N, Lozovoi, A, Goldblatt, R M, Delord, T, Broadway, D A, J -P Tetienne, Johnson, B C, Mitchell, K T, Lew, C T -K, Meriles, C A, Martin, A M

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Impact of pharmacist‐involved collaborative care on the clinical, humanistic and cost outcomes of high‐risk patients with type 2 diabetes (IMPACT): a randomized controlled trial... von Siaw, M. Y. L., Ko, Y., Malone, D. C., Tsou, K. Y. K., Lew, Y.‐J., Foo, D., Tan, E., Chan, S. C., Chia, A., Sinaram, S. S., Goh, K. C., Lee, J. Y.‐C.

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