Effect of High Energy Electron Irradiation on Electrical and Noise Properties of 4H-SiC Schottky Diodes von Lebedev, Alexander A., Levinshtein, Michael E., Rumyantsev, S.L., Kozlovski, Vitalii V., Palmour, John W.

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Carrier mobility model for GaN von Mnatsakanov, Tigran T, Levinshtein, Michael E, Pomortseva, Lubov I, Yurkov, Sergey N, Simin, Grigory S, Asif Khan, M

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1/f noise in forward biased high voltage 4H-SiC Schottky diodes von Shabunina, Eugenia I., Levinshtein, Michael E., Shmidt, Natalia M., Ivanov, Pavel A., Palmour, John W.

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The impact of parasitic inductance on the dV/dt ruggedness of 4H-SiC Schottky diodes von Ivanov, Pavel A., Levinshtein, Michael E.

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Low Frequency Noise in 4H-SiC Schottky Diodes Under Forward Bias von Palmour, John W., Shabunina, Eugenia I., Shmidt, Natalia M., Ivanov, Pavel A., Cheng, Lin, Levinshtein, Michael E.

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Factors limiting the current gain in high-voltage 4H-SiC npn-BJTs von Ivanov, Pavel A, Levinshtein, Michael E, Rumyantsev, Sergey L, Ryu, Sei-Hyung, Agarwal, Anant K, Palmour, John W

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Physical limitations of the diffusive approximation in semiconductor device modeling von Mnatsakanov, Tigran T., Tandoev, Alexey G., Levinshtein, Michael E., Yurkov, Sergey N.

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Effect of high temperature irradiation with 15 MeV protons on characteristics of power SiC Schottky diodes von Lebedev, Alexander A., Kozlovski, Vitali V., Levinshtein, Michael E., Ivanov, Anton E., Davydovskaya, Klava S.

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High power 4H–SiC pin diodes (10kV class) with record high carrier lifetime von Ivanov, Pavel A., Levinshtein, Michael E., Palmour, John W., Das, Mrinal K., Hull, Brett A.

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Current-voltage characteristics and DLTS spectra of high voltage SiC Schottky diodes irradiated with electrons at high temperatures von Levinshtein, Michael E., Lebedev, Alexander A., Kozlovski, Vitali V., Malevsky, Dmitriy A., Kuzmin, Roman A., Oganesyan, Gagik A.

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Steady-state and transient characteristics of 10 kV 4H-SiC diodes von Levinshtein, Michael E., Mnatsakanov, Tigran T., Ivanov, Pavel A., Singh, Ranbir, Palmour, John W., Yurkov, Sergey N.

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Self-Heating of 4H-SiC PiN Diodes at High Current Densities von Palmour, John W., Levinshtein, Michael E., Ivanov, Pavel A., Hull, Brett A., Mnatsakanov, Tigran T., Das, Mrinal K.

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SiC-based electronics (100th anniversary of the Ioffe Institute) von Lebedev, Alexander A., Ivanov, Pavel A., Levinshtein, Michael E., Mokhov, Evgenii N., Nagalyuk, Sergei S., Anisimov, Andrey N., Baranov, Pavel G.

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High-temperature (up to 773 K) operation of 6-kV 4H-SiC junction diodes von Levinshtein, Michael E., Ivanov, Pavel A., Boltovets, Mykola S., Krivutsa, Valentyn A., Palmour, John W., Das, Mrinal K., Hull, Brett A.

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Transient collector modulation of 4H–SiC BJTs during switch-on process von Yuferev, Valentin S., Levinshtein, Michael E., Ivanov, Pavel A., Zhang, Jon Q., Palmour, John W.

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Low Frequency Noise in 4H-SiC MOSFETs von Shur, Michael S., Rumyantsev, Sergey L., Palmour, John W., Levinshtein, Michael E., Ivanov, Pavel A., Hull, Brett A., Das, Mrinal K.

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Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs von Palmour, John W., Levinshtein, Michael E., Krishnaswami, Sumi, Agarwal, Anant K., Ivanov, Pavel A.

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Electrical Characterization of High Voltage 4H-SiC pin Diodes Fabricated Using a Low Basal-Plane Dislocations Process von Boltovets, Mykola S., Krivutsa, Valentyn A., Palmour, John W., Levinshtein, Michael E., Ivanov, Pavel A., Hull, Brett A., Das, Mrinal K.

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Minority carrier injection and current–voltage characteristics of Schottky diodes at high injection level von Mnatsakanov, Tigran T., Levinshtein, Michael E., Tandoev, Alexey G., Yurkov, Sergey N., Palmour, John W.

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Temperature dependence of the current gain in power 4H-SiC NPN BJTs von Ivanov, P.A., Levinshtein, M.E., Agarwal, A.K., Krishnaswami, S., Palmour, J.W.

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