Electrical and noise properties of proton irradiated 4H-SiC Schottky diodes von Kozlovski, V. V., Lebedev, A. A., Levinshtein, M. E., Rumyantsev, S. L., Palmour, J. W.

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Low Frequency Noise and Resistance in Non-Passivated InAsSbP/InAs based Photodiodes in the Presence of Atmosphere with Ethanol Vapor von Levinshtein, M. E., Matveev, B. A., Dyakonova, N.

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Impact of high energy electron irradiation on high voltage Ni/4H-SiC Schottky diodes von Kozlovski, V. V., Lebedev, A. A., Levinshtein, M. E., Rumyantsev, S. L., Palmour, J. W.

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Low frequency noise in reverse biased double heterostructure P-InAsSbP/n-InAs infrared photodiodes von Dyakonova, N, Karandashev, S A, Levinshtein, M E, Matveev, B A, Remennyi, M A

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Low frequency noise in p-InAsSbP/n-InAs infrared photodiodes von Dyakonova, N, Karandashev, S A, Levinshtein, M E, Matveev, B A, Remennyi, M A

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Room temperature low frequency noise in n+-InAs/n-InAsSbP/InAs/p-InAsSbP double heterostructure infrared photodiodes von Dyakonova, N V, Karandashev, S A, Levinshtein, M E, Matveev, B A, Remennyi, M A

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Electron Irradiation Hardness of High-Voltage 4H-SiC Schottky Diodes in the Operating Temperature Range von Lebedev, A. A., Kozlovski, V. V., Levinshtein, M. E., Malevsky, D. A., Kuzmin, R. A.

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Persistent Relaxation Processes in Proton-Irradiated 4H-SiC von Lebedev, A. A., Malevsky, D. A., Kozlovski, V. V., Levinshtein, M. E.

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Effect of Proton Irradiation on the Properties of High-Voltage Integrated 4H-SiC Schottky Diodes at Operating Temperatures von Lebedev, A. A., Kozlovskii, V. V., Levinshtein, M. E., Malevskii, D. A., Oganesyan, G. A.

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Low frequency noise in reverse biased P-InAsSbP/n-InAs infrared photodiodes von Dyakonova, N, Karandashev, S A, Levinshtein, M E, Matveev, B A, Remennyi, M A

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Local Diagnostics of Spin Defects in Irradiated SiC Schottky Diodes von Likhachev, K. V., Skoromokhov, A. M., Uchaev, M. V., Uspenskaya, Yu. A., Kozlovski, V. V., Levinshtein, M. E., Eliseev, I. A., Smirnov, A. N., Kramushchenko, D. D., Babunts, R. A., Baranov, P. G.

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Annealing High-Voltage 4H-SiC Schottky Diodes Irradiated with Electrons at a High Temperature von Lebedev, A. A., Kozlovski, V. V., Levinshtein, M. E., Malevsky, D. A., Oganesyan, G. A., Strel’chuk, A. M., Davydovskaya, K. S.

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Effect of Proton and Electron Irradiation on the Parameters of Gallium Nitride Schottky Diodes von Lebedev, A. A., Sakharov, A. V., Kozlovski, V. V., Malevsky, D. A., Nikolaev, A. E., Levinshtein, M. E.

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Effect of high energy electron irradiation on low frequency noise in 4H-SiC Schottky diodes von Kozlovski, V. V., Lebedev, A. A., Levinshtein, M. E., Rumyantsev, S. L., Palmour, J. W.

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Formation of Radiation Defects in Wide-Band Semiconductors Based on Gallium (Ga2O3, GaN) under Proton Irradiation von Kozlovski, V. V., Vasil’ev, A. E., Lebedev, A. A., Zhurkin, E. E., Levinshtein, M. E., Strelchuk, A. M.

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Diffusion of minority carriers against electric field (high injection level) von Gert, A. V., Dmitriev, A. P., Levinshtein, M. E., Yuferev, V. S., Palmour, J. W.

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Effect of high energy (15 MeV) proton irradiation on vertical power 4H-SiC MOSFETs von Lebedev, A A, Kozlovski, V V, Levinshtein, M E, Ivanov, P A, Strel'chuk, A M, Zubov, A V, Fursin, Leonid

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Effect of the Electron-Irradiation Temperature on the Formation of Radiation Defects in Silicon Carbide von Kozlovski, V. V., Vasil’ev, A. E., Lebedev, A. A., Davydovskaya, K. S., Levinshtein, M. E.

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Impact of High-Energy Electron Irradiation on Surge Currents in 4H-SiC JBS Schottky Diodes von Lebedev, A. A., Kozlovski, V. V., Ivanov, P. A., Levinshtein, M. E., Zubov, A. V.

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Surge current capabilities and isothermal current-voltage characteristics of high-voltage 4H-SiC junction barrier Schottky rectifiers von Palmour, J W, Levinshtein, M E, Ivanov, P A, Zhang, Q J

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