Radiation-induced effects in a new class of optical waveguides: the air-guiding photonic crystal fibers von Girard, S., Baggio, J., Leray, J.-L.

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Vulnerability analysis of optical fibers for laser megajoule facility: preliminary studies von Girard, S., Baggio, J., Leray, J.-L., Meunier, J.-P., Boukenter, A., Ouerdane, Y.

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Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides von Schwank, J.R., Shaneyfelt, M.R., Dodd, P.E., Ferlet-Cavrois, V., Loemker, R.A., Winokur, P.S., Fleetwood, D.M., Paillet, P., Leray, J.-L., Draper, B.L., Witczak, S.C., Riewe, L.C.

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Worst-case bias during total dose irradiation of SOI transistors von Ferlet-Cavrois, V., Colladant, T., Paillet, P., Leray, J.L., Musseau, O., Schwank, J.R., Shaneyfelt, M.R., Pelloie, J.L., du Port de Poncharra, J.

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Evidence for a Radiation Induced Electromotive Force (RIEMF) in Dielectrics Exposed to Very High 14 MeV Neutron Flux by Means of Neutron Induced Recoils von Leray, J.-L., Bazzoli, S., Sauvestre, J.-E., Glebov, V.Yu

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Effects of atmospheric neutrons on devices, at sea level and in avionics embedded systems von Leray, J.L.

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14 MeV neutron-induced SEU in SRAM devices von Flament, O., Baggio, J., D'hose, C., Gasiot, G., Leray, J.L.

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Investigations on the Vulnerability of Advanced CMOS Technologies to MGy Dose Environments von Gaillardin, M., Girard, S., Paillet, P., Leray, J. L., Goiffon, V., Magnan, P., Marcandella, C., Martinez, M., Raine, M., Duhamel, O., Richard, N., Andrieu, F., Barraud, S., Faynot, O.

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Diagnostic components in harsh radiation environments: Possible overlap in R&D requirements of inertial confinement and magnetic fusion systems von Bourgade, J. L., Costley, A. E., Reichle, R., Hodgson, E. R., Hsing, W., Glebov, V., Decreton, M., Leeper, R., Leray, J. L., Dentan, M., Hutter, T., Moroño, A., Eder, D., Shmayda, W., Brichard, B., Baggio, J., Bertalot, L, Vayakis, G., Moran, M., Sangster, T. C., Vermeeren, L., Stoeckl, C., Girard, S., Pien, G.

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Diagnostics hardening for harsh environment in Laser Mégajoule (invited)a von Bourgade, J. L., Marmoret, R., Darbon, S., Rosch, R., Troussel, P., Villette, B., Glebov, V., Shmayda, W. T., Gomme, J. C., Le Tonqueze, Y., Aubard, F., Baggio, J., Bazzoli, S., Bonneau, F., Boutin, J. Y., Caillaud, T., Chollet, C., Combis, P., Disdier, L., Gazave, J., Girard, S., Gontier, D., Jaanimagi, P., Jacquet, H. P., Jadaud, J. P., Landoas, O., Legendre, J., Leray, J. L., Maroni, R., Meyerhofer, D. D., Miquel, J. L., Marshall, F. J., Masclet-Gobin, I., Pien, G., Raimbourg, J., Reverdin, C., Richard, A., Rubin de Cervens, D., Sangster, C. T., Seaux, J. P., Soullie, G., Stoeckl, C., Thfoin, I., Videau, L., Zuber, C.

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Theoretical study using density functional theory of defects in amorphous silicon dioxide von Courtot-Descharles, A., Paillet, P., Leray, J.L.

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Impact of ion energy on single-event upset von Dodd, P.E., Musseau, O., Shaneyfelt, M.R., Sexton, F.W., D'hose, C., Hash, G.L., Martinez, M., Loemker, R.A., Leray, J.-L., Winokur, P.S.

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Two-dimensional simulation of total dose effects on NMOSFET with lateral parasitic transistor von Brisset, C., Ferlet-Cavrois, V., Flament, O., Musseau, O., Leray, J.L., Pelloie, J.L., Escoffier, R., Michez, A., Cirba, C., Bordure, G.

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New constraints for plasma diagnostics development due to the harsh environment of MJ class lasers (invited) von Bourgade, J. L., Allouche, V., Baggio, J., Bayer, C., Bonneau, F., Chollet, C., Darbon, S., Disdier, L., Gontier, D., Houry, M., Jacquet, H. P., Jadaud, J. P., Leray, J. L., Masclet-Gobin, I., Negre, J. P., Raimbourg, J., Villette, B., Bertron, I., Chevalier, J. M., Favier, J. M., Gazave, J., Gomme, J. C., Malaise, F., Seaux, J. P., Glebov, V. Yu, Jaanimagi, P., Stoeckl, C., Sangster, T. C., Pien, G., Lerche, R. A., Hodgson, E. R.

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Total dose induced latch in short channel NMOS/SOI transistors von Ferlet-Cavrois, V., Quoizola, S., Musseau, O., Flament, O., Leray, J.L., Pelloie, J.L., Raynaud, C., Faynot, O.

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Total dose effects on a fully-depleted SOI NMOSFET and its lateral parasitic transistor von Ferlet-Cavrois, V., Musseau, O., Leray, J.-L., Pelloie, J.-L., Raynaud, C.

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Impact of technology scaling in SOI back-channel total dose tolerance. A 2-D numerical study using self-consistent oxide code von Leray, J.-L., Paillet, P., Ferlet-Cavrois, V., Tavernier, C., Belhaddad, K., Penzin, O.

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Ultraviolet radiation induced defect creation in buried SiO2 layers von DEVINE, R. A. B, LERAY, J.-L, MARGAIL, J

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Density functional theory applied to the calculation of dielectric constant of low- k materials von Courtot-Descharles, A., Pires, F., Paillet, P., Leray, J.L.

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Evidence of negative charge trapping in high temperature annealed thermal oxide von Paillet, P., Herve, D., Leray, J.L., Devine, R.A.B.

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