The radiation response of the high dielectric-constant hafnium oxide/silicon system von Kang, A.Y., Lenahan, P.M., Conley, J.F.

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Direct experimental evidence for atomic scale structural changes involved in the interface-trap transformation process von Lenahan, P.M., Mishima, T.D., Jumper, J., Fogarty, T.N., Wilkins, R.T.

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Bias temperature instabilities in 4H SiC metal oxide semiconductor field effect transistors: Insight provided by electrically detected magnetic resonance von Lenahan, P.M., Anders, M.A., Waskiewicz, R.J., Lelis, A.J.

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Deep level defects involved in MOS device instabilities von Lenahan, P.M.

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Interface Traps in Silicon Carbide MOSFETs von Cochrane, C.J., Lenahan, P.M., Lelis, A.J.

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A spin-dependent recombination study of radiation-induced P/sub b1/ centers at the [001] Si/SiO/sub 2/ interface von Mishima, T.D., Lenahan, P.M.

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Spin dependent recombination study of the atomic-scale effects of fluorine on the negative bias temperature instability von Ryan, J.T., Lenahan, P.M., Krishnan, A.T., Krishnan, S., Campbell, J.P.

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Real time exponentially weighted recursive least squares adaptive signal averaging for enhancing the sensitivity of continuous wave magnetic resonance von Cochrane, C.J., Lenahan, P.M.

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Atomic scale defects involved in MOS reliability problems von Lenahan, P.M

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A radically different model for NBTI in nitrided oxide MOSFETs von Lenahan, P.M.

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Identification of the atomic scale defects involved in radiation damage in HfO2 based MOS devices von Ryan, J.T, Lenahan, P.M, Kang, A.Y, Conley, J.F, Bersuker, G, Lysaght, P

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A study of charge trapping in PECVD PTEOS films von Lenahan, P.M., Billman, C.A., Fuller, R., Evans, H., Speece, W.H., DeCrosta, D., Lowry, R.

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Bridging nitrogen dangling bond centers and electron trapping in amorphous NH3-nitrided and reoxidized nitrided oxide films von Yount, J.T., Lenahan, P.M.

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A model for NBTI in nitrided oxide MOSFETs without hydrogen or diffusion von Lenahan, P M

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The nature of the dominant deep trap in amorphous silicon nitride films: Evidence for a negative correlation energy von Lenahan, P.M., Krick, D.T., Kanicki, J.

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Identification of the microscopic structure of new hot carrier damage centers in short channel MOSFETs von Billman, C.A., Lenahan, P.M., Weber, W.

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NBTI: An Atomic-Scale Defect Perspective von Campbell, J.P., Lenahan, P.M., Krishnan, A.T., Krishnan, S.

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A spin-dependent recombination study of radiation-induced Pb1 centers at the (001) Si/SiO2 interface von Mishima, T.D, Lenahan, P.M

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Direct experimental evidence linking silicon dangling bond defects to oxide leakage currents von Lenahan, P.M., Mele, J.J., Campbell, J.P., Kang, A.Y., Lowry, R.K., Woodbury, D., Liu, S.T., Weimer, R.

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Process integration of an interlevel dielectric (ILDO) module using a building-in reliability approach von Paulsen, R.E., Kyono, C.S., Wang, Y., Klein, K.M., Lim, I.-S., Tinkler, S., Bellamak, B., Odle, D.W., Zhou, Z., Dahl, P., Giovanetto, M., Makwana, J., Patel, S., Reno, C., Lenahan, P.M., Billman, C.A.

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