Hydride Vapor‐Phase Epitaxy Reactor for Bulk GaN Growth von Voronenkov, Vladislav, Bochkareva, Natalia, Zubrilov, Andrey, Lelikov, Yuri, Gorbunov, Ruslan, Latyshev, Philipp, Shreter, Yuri

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Laser slicing: A thin film lift-off method for GaN-on-GaN technology von Voronenkov, Vladislav, Bochkareva, Natalia, Gorbunov, Ruslan, Zubrilov, Andrey, Kogotkov, Viktor, Latyshev, Philipp, Lelikov, Yuri, Leonidov, Andrey, Shreter, Yuri

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Nature of V-Shaped Defects in GaN von Voronenkov, Vladislav, Bochkareva, Natalia, Gorbunov, Ruslan, Latyshev, Philipp, Lelikov, Yuri, Rebane, Yury, Tsyuk, Alexander, Zubrilov, Andrey, Shreter, Yuri

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Thick GaN film stress-induced self-separation von Voronenkov, Vladislav, Leonidov, Andrey, Lelikov, Yuri, Zubrilov, Andrey, Shreter, Yuri

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Hydride Vapor-Phase Epitaxy Reactor for Bulk GaN Growth von Voronenkov, Vladislav, Bochkareva, Natalia, Zubrilov, Andrey, Lelikov, Yuri, Gorbunov, Ruslan, Latyshev, Philipp, Shreter, Yuri

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Nature of V-Shaped Defects in GaN von Voronenkov, Vladislav, Bochkareva, Natalia, Gorbunov, Ruslan, Latyshev, Philippe, Lelikov, Yuri, Rebane, Yuri, Tsyuk, Alexander, Zubrilov, Andrey, Shreter, Yuri

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Free-standing 2-inch bulk GaN crystal fabrication by HVPE using a carbon buffer layer von Voronenkov, Vladislav, Leonidov, Andrey, Bochkareva, Natalia, Gorbunov, Ruslan, Latyshev, Philippe, Lelikov, Yuri, Kogotkov, Viktor, Zubrilov, Andrey, Shreter, Yuri

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Laser slicing: a thin film lift-off method for GaN-on-GaN technology von Voronenkov, Vladislav, Bochkareva, Natalia, Gorbunov, Ruslan, Zubrilov, Andrey, Kogotkov, Viktor, Latyshev, Philipp, Lelikov, Yuri, Leonidov, Andrey, Shreter, Yuri

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