Analysis of data from the new automatic control system at the AKM-312 sintering machine von Frolov, Yu. A., Bogatikov, V. N., Isaenko, G. E., Semenov, O. A., Lelikov, A. N., Zykov, V. P.

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Defect-related tunneling mechanism of efficiency droop in III-nitride light-emitting diodes von Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Zubrilov, A. S., Lelikov, Y. S., Latyshev, P. E., Rebane, Y. T., Tsyuk, A. I., Shreter, Y. G.

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Improvement of The Safety Systems for Working at Heights on Transmission Towers von Pham, N T, Lelikov, G, Korolchenko, D

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Two modes of HVPE growth of GaN and related macrodefects von Voronenkov, V. V., Bochkareva, N. I., Gorbunov, R. I., Latyshev, P. E., Lelikov, Y. S., Rebane, Y. T., Tsyuk, A. I., Zubrilov, A. S., Popp, U. W., Strafela, M., Strunk, H. P., Shreter, Y. G.

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Free-standing 2-inch bulk GaN crystal fabrication by HVPE using a carbon buffer layer von Voronenkov, V V, Leonidov, A A, Bochkareva, N I, Gorbunov, R I, Latyshev, P E, Lelikov, Y S, Kogotkov, V S, Zubrilov, A S, Shreter, Y G

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Composition and distribution of REE in ferromanganese crusts of the Belyaevsky and Medvedev seamounts in the Sea of Japan von Mikhailik, P. E., Mikhailik, E. V., Zarubina, N. V., Barinov, N. N., S’edin, V. T., Lelikov, E. P.

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Tunnel injection and power efficiency of InGaN/GaN light-emitting diodes von Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Latyshev, P. E., Lelikov, Yu. S., Rebane, Yu. T., Tsyuk, A. I., Shreter, Yu. G.

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Effect of localized tail states in InGaN on the efficiency droop in GaN light-emitting diodes with increasing current density von Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Zubrilov, A. S., Latyshev, P. E., Lelikov, Yu. S., Rebane, Yu. T., Tsyuk, A. I., Shreter, Yu. G.

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On the laser detachment of n-GaN films from substrates, based on the strong absorption of IR light by free charge carriers in n+-GaN substrates von Virko, M. V., Kogotkov, V. S., Leonidov, A. A., Voronenkov, V. V., Rebane, Yu. T., Zubrilov, A. S., Gorbunov, R. I., Latyshev, P. E., Bochkareva, N. I., Lelikov, Yu. S., Tarhin, D. V., Smirnov, A. N., Davydov, V. Yu, Shreter, Yu. G.

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On the laser lift-off of lightly doped micrometer-thick n-GaN films from substrates via the absorption of IR radiation in sapphire von Voronenkov, V. V., Virko, M. V., Kogotkov, V. S., Leonidov, A. A., Pinchuk, A. V., Zubrilov, A. S., Gorbunov, R. I., Latishev, F. E., Bochkareva, N. I., Lelikov, Y. S., Tarkhin, D. V., Smirnov, A. N., Davydov, V. Y., Sheremet, I. A., Shreter, Y. G.

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Thick GaN Films Grown on Patterned Sapphire Substrates von Voronenkov, Vladislav, Gorbunov, Ruslan, Tsyuk, Alexander, Latyshev, Philippe, Lelikov, Yuriy, Rebane, Yuriy, Zubrilov, Andrey, Bochkareva, Natalia, Shreter, Yuriy

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Naming undersea features of the Sea of Japan: History and modern problems von Tsoy, I. B., Karnaukh, V. N., Lelikov, E. P.

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Effect of Growth Parameters on Stress in HVPE GaN Films von Tsyuk, Alexander, Gorbunov, Ruslan, Voronenkov, Vladislav, Lelikov, Yuriy, Latyshev, Philippe, Zubrilov, Andrey, Rebane, Yuriy, Bochkareva, Natalia, Shreter, Yuriy

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Mechanism of the GaN LED efficiency falloff with increasing current von Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Zubrilov, A. S., Lelikov, Y. S., Latyshev, F. E., Rebane, Y. T., Tsyuk, A. I., Shreter, Y. G.

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Late Mesozoic and Cenozoic volcanosedimentary complexes from the submarine Vityaz Ridge, the Island Arc slope of the Kuril-Kamchatka trench, and its evolution von Terekhov, E. P., Mozherovsky, A. V., Tsoy, I. B., Lelikov, E. P., Vashchenkova, N. G., Gorovaya, M. T.

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Defect-related tunneling mechanism of efficiency droop in III-nitridelight-emitting diodes von Bochkareva, N. I., Voronenkov, V. V., Gorbunov, R. I., Zubrilov, A. S., Lelikov, Y. S., Latyshev, P. E., Rebane, Y. T., Tsyuk, A. I., Shreter, Y. G.

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Quantum efficiency and formation of the emission line in light-emitting diodes based on InGaN/GaN quantum well structures von Bochkareva, N. I., Tarkhin, D. V., Rebane, Yu. T., Gorbunov, R. I., Lelikov, Yu. S., Martynov, I. A., Shreter, Yu. G.

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Measurement of the absorption coefficient for light laterally propagating in light-emitting diode structures with In0.2Ga0.8N/GaN quantum wells von Lelikov, Yu. S., Bochkareva, N. I., Gorbunov, R. I., Martynov, I. A., Rebane, Yu. T., Tarkin, D. V., Shreter, Yu. G.

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Optical properties of blue light-emitting diodes in the InGaN/GaN system at high current densities von Bochkareva, N. I., Gorbunov, R. I., Klochkov, A. V., Lelikov, Yu. S., Martynov, I. A., Rebane, Yu. T., Belov, A. S., Shreter, Yu. G.

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Geological structure of the Kashevarov Trough (central Sea of Okhotsk) von Lelikov, E. P., Tsoy, I. B., Vagina, N. K., Emel’yanova, T. A., Terekhov, E. P., Khudik, V. D.

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