Electron mobility enhancement in strained-Si n-MOSFETs fabricated on SiGe-on-insulator (SGOI) substrates von Zhi-Yuan Cheng, Currie, M.T., Leitz, C.W., Taraschi, G., Fitzgerald, E.A., Hoyt, J.L., Antoniadas, D.A.

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Influence of high channel doping on the inversion layer electron mobility in strained silicon n-MOSFETs von Nayfeh, H.M., Leitz, C.W., Pitera, A.J., Fitzgerald, E.A., Hoyt, J.L., Antoniadis, D.A.

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Strained Si on insulator technology: from materials to devices von Langdo, T.A, Currie, M.T, Cheng, Z.-Y, Fiorenza, J.G, Erdtmann, M, Braithwaite, G, Leitz, C.W, Vineis, C.J, Carlin, J.A, Lochtefeld, A, Bulsara, M.T, Lauer, I, Antoniadis, D.A, Somerville, M

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Fully depleted n-MOSFETs on supercritical thickness strained SOI von Lauer, I., Langdo, T.A., Cheng, Z.-Y., Fiorenza, J.G., Braithwaite, G., Currie, M.T., Leitz, C.W., Lochtefeld, A., Badawi, H., Bulsara, M.T., Somerville, M., Antoniadis, D.A.

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Optimized measurement of strained Si thickness and SiGe virtual substrate composition by spectroscopic ellipsometry von Vineis, C.J., Erdtmann, M., Leitz, C.W.

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Direct regrowth of thin strained silicon films on planarized relaxed silicon–germanium virtual substrates von Leitz, C.W., Vineis, C.J., Carlin, J., Fiorenza, J., Braithwaite, G., Westhoff, R., Yang, V., Carroll, M., Langdo, T.A., Matthews, K., Kohli, P., Rodder, M., Wise, R., Lochtefeld, A.

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Electron inversion layer mobility in strained-Si n-MOSFETs with high channel doping concentration achieved by ion implantation von Nayfeh, H.M., Hoyt, J.L., Leitz, C.W., Pitera, A.J., Fitzgerald, E.A., Antoniadis, D.A.

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High efficiency GaAs-on-Si solar cells with high V/sub oc/ using graded GeSi buffers von Carlin, J.A., Hudait, M.K., Ringel, S.A., Wilt, D.M., Clark, E.B., Leitz, C.W., Currie, M., Langdo, T., Fitzgerald, E.A.

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SiGe-On-Insulator (SGOI): substrate preparation and MOSFET fabrication for electron mobility evaluation von Zhi-Yuan Cheng, Currie, M.T., Leitz, C.W., Taraschi, G., Pitera, A., Lee, M.L., Langdo, T.A., Hoyt, J.L., Antoniadis, D.A., Fitzgerald, E.A.

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The science and applications of relaxed semiconductor alloys on conventional substrates von Fitzgerald, E.A., Groenart, M.E., Pitera, A., Lee, M.L., Yang, V., Carlin, J.A., Leitz, C.W., Andre, C.L., Ringel, S.A.

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Impact of threading dislocations on both n/p and p/n single junction GaAs cells grown on Ge/SiGe/Si substrates von Andre, C.L., Khan, A., Gonzalez, M., Hudait, M.K., Fitzgerald, E.A., Carlin, J.A., Currie, M.T., Leitz, C.W., Langdo, T.A., Clark, E.B., Wilt, D.M., Ringel, S.A.

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DC and RF characterization of fully depleted strained SOI MOSFETs von Chen, C.L., Langdo, T.A., Chen, C.K., Fiorenza, J.G., Wyatt, P.W., Currie, M.T., Leitz, C.W., Braithwaite, G., Fritze, M., Lambert, R., Yost, D.-R., Cheng, Z., Lochtefeld, A., Keast, C.K.

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