High-resolution investigations of ripple structures formed by femtosecond laser irradiation of silicon von Schade, M, Varlamova, O, Reif, J, Blumtritt, H, Erfurth, W, Leipner, H. S

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Aperiodic SiSn/Si multilayers for thermoelectric applications von Tonkikh, A.A., Zakharov, N.D., Eisenschmidt, C., Leipner, H.S., Werner, P.

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Power Factor Anisotropy of p-Type and n-Type Conductive Thermoelectric Bi-Sb-Te Thin Films von Rothe, K., Stordeur, M., Leipner, H. S.

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High-resolution analytical electron microscopy of catalytically etched silicon nanowires von Schade, M., Geyer, N., Fuhrmann, B., Heyroth, F., Leipner, H. S.

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Effects of annealing on arrays of Ge nanocolumns formed by glancing angle deposition von Khare, C., Gerlach, J.W., Höche, T., Fuhrmann, B., Leipner, H.S., Rauschenbach, B.

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MOVPE growth and real structure of vertical-aligned GaAs nanowires von Bauer, J., Gottschalch, V., Paetzelt, H., Wagner, G., Fuhrmann, B., Leipner, H.S.

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Morphological and microstructural investigations of composite dielectrics for energy storage von Glenneberg, J, Zenkner, M, Wagner, G, Lemm, S, Ehrhardt, C, Münchgesang, W, Buchsteiner, A, Diestelhorst, M, Beige, H, Ebbinghaus, S. G, Leipner, H. S

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Indentation-induced dislocations and cracks in (0001) freestanding and epitaxial GaN von Ratschinski, I, Leipner, H S, Heyroth, F, Fränzel, W, Moutanabbir, O, Hammer, R, Jurisch, M

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Identification of the 0.95 eV luminescence band in n-type GaAs:Si von Lei, H, Leipner, H S, Bondarenko, V, Schreiber, J

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Cracks and dislocations at Vickers, Berkovich and cube corner indentations in (0001) GaN single crystals von Ratschinski, I., Leipner, H. S., Heyroth, F., Mook, W., Michler, J., Fränzel, W., Leibiger, G., Habel, F.

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Small-angle subgrain boundaries emanating from dislocation pile-ups in multicrystalline silicon studied with synchrotron white-beam X-ray topography von Oriwol, D., Carl, E.-R., Danilewsky, A.N., Sylla, L., Seifert, W., Kittler, M., Leipner, H.S.

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Raman microscopic investigations of BaTiO3 precursors with core?shell structure von Rossel, M, Hoche, H-R, Leipner, H S, Voltzke, D, Abicht, H-P, Hollricher, O, Muller, J, Gablenz, S

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Raman and cathodoluminescence study of dislocations in GaN von Lei, H., Leipner, H. S., Schreiber, J., Weyher, J. L., Wosiński, T., Grzegory, I.

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Pop-in effect as homogeneous nucleation of dislocations during nanoindentation von Lorenz, D., Zeckzer, A., Hilpert, U., Grau, P., Johansen, H., Leipner, H. S.

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Review of defect investigations by means of positron annihilation in II-VI compound semiconductors von KRAUSE-REHBERG, R, LEIPNER, H. S, ABGARJAN, T, POLITY, A

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Divacancy complexes induced by Cu diffusion in Zn-doped GaAs von Elsayed, M., Krause-Rehberg, R., Korff, B., Ratschinski, I., Leipner, H. S.

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Interactions of point defects with dislocations in n-type silicon-doped GaAs von Lei, H, Leipner, H S, Engler, N, Schreiber, J

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Three different mechanisms of self-discharge behavior in poly(vinylidene fluoride-hexafluoropropylene) for dielectric energy storage von Band, T, Mälzer, T, Wickert, S, Leipner, H S, Ebbinghaus, S G, Dörr, K, Diestelhorst, M

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Defects properties in plastically deformed silicon studied by positron lifetime measurements von Wang, Z., Leipner, H.S., Krause-Rehberg, R., Bodarenko, V., Gu, H.

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Vacancy clusters in plastically deformed semiconductors von Leipner, H S, Hübner, C G, Staab, T E M, Haugk, M, Sieck, A, Krause-Rehberg, R, Frauenheim, T

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