AlGaN/GaN HEMTs on Si(111) with 6.6 W/mm output power density von Behtash, R., Tobler, H., Neuburger, M., Schurr, A., Leier, H., Cordier, Y., Semond, F., Natali, F., Massies, J.

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Current instabilities in GaN-based devices von Daumiller, I., Theron, D., Gaquiere, C., Vescan, A., Dietrich, R., Wieszt, A., Leier, H., Vetury, R., Mishra, U.K., Smorchkova, I.P., Keller, S., Nguyen, C., Kohn, E.

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Heat-spreading diamond films for GaN-based high-power transistor devices von Seelmann-Eggebert, M., Meisen, P., Schaudel, F., Koidl, P., Vescan, A., Leier, H.

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Small signal and power measurements of AlGaN/GaN HEMT with SiN passivation von Lee, Jong-Soo, Vescan, A, Wieszt, A, Dietrich, R, Leier, H, Kwon, Young-Se

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Direct extraction of linear HBT-model parameters using nine analytical expression blocks von Ouslimani, A., Gaubert, J., Hafdallah, H., Birafane, A., Pouvil, P., Leier, H.

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Dimensionality dependence of the band-gap renormalization in two- and three-dimensional electron-hole plasmas in GaAs von TRÄNKLE, G, LEIER, H, FORCHEL, A, HAUG, H, ELL, C, WEIMANN, G

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Power handling limits and degradation of large area AlGaN/GaN RF-HEMTs von Dietrich, R, Wieszt, A, Vescan, A, Leier, H, Stenzel, R, Klix, W

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Reduction of base-collector capacitance in InP/InGaAs HBT's using a novel double polyimide planarization process von Hyunchol Shin, Gaessler, C., Leier, H.

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AlGaN/GaN MODFETs on semi-insulating SiC with 3 W/mm at 20 GHz von Vescan, A, Dietrich, R, Wieszt, A, Schurr, A, Leier, H, Piner, E L, Redwing, J M

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Mass and dose dependence of ion-implantation-induced intermixing of GaAs/GaAlAs quantum-well structures von LEIER, H, FORCHEL, A, HOÊRCHER, G, HOMMEL, J, BAYER, S, ROTHFRITZ, H, WEIMANN, G, SCHLAPP, W

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MBE grown AlGaN/GaN MODFETs with high breakdown voltage von Vescan, A., Dietrich, R., Wieszt, A., Tobler, H., Leier, H., Van Hove, J.M., Chow, P.P., Wowchak, A.M.

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Coplanar AlGaN/GaN HEMT power amplifier MMIC at X-band von Behtash, R., Tobler, H., Berlec, F.-J., Ziegler, V., Leier, H., Adelseck, B., Martin, T., Balmer, R.S., Pavlidis, D., Jansen, R.H., Neuburger, M., Schumacher, H.

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24-27 GHz dielectrically stabilized oscillators with excellent phase noise properties utilizing InP/InGaAs HBTs von Guttich, U., Shin, H., Erben, U., Gaessler, C., Leier, H.

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Carrier capture in intermixed quantum wires with sharp lateral confinement von LEIER, H, FORCHEL, A, MAILE, B. E, MAYER, G, HOMMEL, J, WEIMANN, G, SCHLAPP, W

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Effect of Illumination on the Electrical Characteristics of AlGaN/GaN FETs von Dietrich, R., Vescan, A., Wieszt, A., Leier, H., Boutros, K. S., Redwing, J. M., Kornitzer, K., Freitag, R., Ebner, T., Thonke, K.

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Ankle cuff for an exercise apparatus von Leier, Christopher H

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Formula for the current gain cut-off frequency considering intrinsic emitter dimensions and extrinsic parasitics in HBT von Shin, Hyunchol, Leier, Helmut

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Optical properties of thermally interdiffused MBE-grown GaAs/GaAlAs quantum wells von Leier, H., Rothfritz, H., Forchel, A., Weimann, G.

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20W GaN HPAs for Next Generation X-Band T/R-Modules von Schuh, P., Leberer, R., Sledzik, H., Oppermann, M., Adelseck, B., Brugger, H., Behtash, R., Leier, H., Quay, R., Kiefer, R.

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Subpicosecond characterization of carrier transport in GaAs-metal-semiconductor-metal photodiodes von LAMBSDORFF, M, KLINGENSTEIN, M, KUHL, J, MOGLESTUE, C, ROSENZWEIG, J, AXMANN, A, SCHNEIDER, J, HÜLSMANN, A, LEIER, H, FORCHEL, A

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