Competing relaxation mechanisms in strained layers von Tersoff, J, LeGoues, FK

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Anomalous strain relaxation in SiGe thin films and superlattices von LEGOUES, F. K, MEYERSON, B. S, MORAR, J. F

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Defect self-annihilation in surfactant-mediated epitaxial growth von HORN-VON HOEGEN, M, LEGOUES, F. K, COPEL, M, REUTER, M. C, TROMP, R. M

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Oxidation studies of SiGe von LEGOUES, F. K, ROSENBERG, R, NGUYEN, T, HIMPSEL, F, MEYERSON, B. S

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Mechanism and conditions for anomalous strain relaxation in graded thin films and superlattices von LEGOUES, F. K, MEYERSON, B. S, MORAR, J. F, KIRCHNER, P. D

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New approach to the growth of low dislocation relaxed SiGe material von Powell, A. R., Iyer, S. S., LeGoues, F. K.

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Growth and strain compensation effects in the ternary Si1-x-yGexCy alloy system von EBERL, K, LYER, S. S, ZOLLNER, S, TSANG, J. C, LEGOUES, F. K

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In situ ultrahigh vacuum transmission electron microscopy studies of hetero-epitaxial growth. I. Si(001)/Ge von HAMMAR, M, LEGOUES, F. K, TERSOFF, J, REUTER, M. C, TROMP, R. M

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Identification of a mobility-limiting scattering mechanism in modulation-doped Si/SiGe heterostructures von Ismail, K, LeGoues, FK, Saenger, KL, Arafa, M, Chu, JO, Mooney, PM, Meyerson, BS

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Orientation dependence of grain-boundary critical currents in YBa2Cu3O7-δ bicrystals von DIMOS, D, CHAUDHARI, P, MANNHART, J, LEGOUES, F. K

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A liquid solution synthesis of single crystal germanium quantum wires von Heath, James R., LeGoues, Francoise K.

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Cyclic growth of strain-relaxed islands von LeGoues, FK, Reuter, MC, Tersoff, J, Hammar, M, Tromp, RM

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Nucleation of dislocations in SiGe layers grown on (001)Si von Mooney, P. M., LeGoues, F. K., Tersoff, J., Chu, J. O.

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Kinetics and mechanism of oxidation of SiGe: dry versus wet oxidation von LEGOUES, F. K, ROSENBERG, R, MEYERSON, B. S

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Relaxed Si0.7Ge0.3 buffer layers for high-mobility devices von Mooney, P. M., Jordan-Sweet, J. L., Ismail, K., Chu, J. O., Feenstra, R. M., LeGoues, F. K.

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High-temperature SiO2 decomposition at the SiO2/Si interface von TROMP, R, RUBLOFF, G. W, BALK, P, LEGOUES, F. K, VAN LOENEN, E. J

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Surfactant coverage and epitaxy of Ge on Ga-terminated Si(111) von FALTA, J, COPEL, M, LEGOUES, F. K, TROMP, R. M

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Surface-stress-induced order in SiGe alloy films von LEGOUES, F. K, KESAN, V. P, IYER, S. S, TERSOFF, J, TROMP, R

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Self-aligned sources for dislocation nucleation: The key to low threading dislocation densities in compositionally graded thin films grown at low temperature von LeGoues, FK

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Cooperative growth phenomena in silicon/germanium low-temperature epitaxy von MEYERSON, B. S, URAM, K. J, LEGOUES, F. K

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