Effects of hydrogen, oxygen, and argon annealing on the electrical properties of ZnO and ZnO devices studied by current-voltage, deep level transient spectroscopy, and Laplace DLTS von Mtangi, W., Auret, F. D., Meyer, W. E., Legodi, M. J., Janse van Rensburg, P. J., Coelho, S. M. M., Diale, M., Nel, J. M.

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Electrical characterization of 1.8 MeV proton-bombarded ZnO von Auret, F. D., Goodman, S. A., Hayes, M., Legodi, M. J., van Laarhoven, H. A., Look, D. C.

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Electrical characterization of vapor-phase-grown single-crystal ZnO von Auret, F. D., Goodman, S. A., Legodi, M. J., Meyer, W. E., Look, D. C.

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Defects induced by solid state reactions at the tungsten-silicon carbide interface von Tunhuma, S. M., Diale, M., Legodi, M. J., Nel, J. M., Thabete, T. T., Auret, F. D.

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The fine structure of electron irradiation induced EL2-like defects in n-GaAs von Tunhuma, S. M., Auret, F. D., Legodi, M. J., Diale, M.

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Electrical Characterization of High Energy Electron Irradiated Ni/4H-SiC Schottky Barrier Diodes von Paradzah, A. T., Omotoso, E., Legodi, M. J., Auret, F. D., Meyer, W. E., Diale, M.

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The influence of high energy proton bombardment on the electrical and defect properties of single-crystal ZnO von Auret, F D, Goodman, S A, Hayes, M, Legodi, M J, Laarhoven, H A van, Look, D C

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Electrical characterisation of deep level defects created by bombarding the n-type 4H-SiC with 1.8 MeV protons von Omotoso, E., Paradzah, A.T., Janse van Rensburg, P.J., Legodi, M.J., Auret, F.D., Igumbor, E., Danga, H.T., Diale, M., Meyer, W.E.

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Electrical characterisation of hole traps in n-type GaN von Auret, F. D., Meyer, W. E., Wu, L., Hayes, M., Legodi, M. J., Beaumont, B., Gibart, P.

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Interface properties of an O2 annealed Au/Ni/n-Al0.18Ga0.82N Schottky contact von Legodi, M.J., Meyer, W.E., Auret, F.D.

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Fabrication and characterisation of NiO/ZnO structures von Nel, J.M, Auret, F.D, Wu, L, Legodi, M.J, Meyer, W.E, Hayes, M

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Electrical characterization of 5.4 MeV alpha-particle irradiated 4H-SiC with low doping density von Paradzah, A.T., Auret, F.D., Legodi, M.J., Omotoso, E., Diale, M.

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The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes von Tunhuma, S.M., Auret, F.D., Legodi, M.J., Diale, M.

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Deep levels introduced in n-GaN grown by the ELOG technique by high-energy electron irradiation von Goodman, S.A, Auret, F.D, Myburg, G, Legodi, M.J, Gibart, P, Beaumont, B

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Electron traps created in n-type GaN during 25 keV hydrogen implantation von Auret, F.D, Meyer, W.E, Goodman, S.A, Hayes, M, Legodi, M.J, Beaumont, B, Gibart, P

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Electrical characterization of defects introduced during sputter deposition of tungsten on n type 4H-SiC von Tunhuma, Shandirai M., Auret, F.D., Legodi, M.J., Nel, J., Diale, M.

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Electrical characterization of electron irradiated and annealed lowly-doped 4H-SiC von Omotoso, E., Paradzah, A.T., Legodi, M.J., Diale, M., Meyer, W.E., Auret, F.D.

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Electronic and transformation properties of a metastable defect introduced in epitaxially grown sulfur doped n-GaAs by particle irradiation von LEGODI, M. J, AURET, F. D, GOODMAN, S. A

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Electrical characterization of ion bombarded AlGaN Schottky photodetectors von Legodi, M. J., Auret, F. D., Hayes, M.

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The effect of high temperatures on the electrical characteristics of Au/n-GaAs Schottky diodes von Tunhuma, S M, Auret, F D, Legodi, M J, Diale, M

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