Flyweight, Superelastic, Electrically Conductive, and Flame‐Retardant 3D Multi‐Nanolayer Graphene/Ceramic Metamaterial von Zhang, Qiangqiang, Lin, Dong, Deng, Biwei, Xu, Xiang, Nian, Qiong, Jin, Shengyu, Leedy, Kevin D., Li, Hui, Cheng, Gary J.

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Nondestructive quantitative mapping of impurities and point defects in thin films: Ga and VZn in ZnO:Ga von Look, David C., Leedy, Kevin D., Agresta, Donald L.

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A statistical method to optimize the chemical etching process of zinc oxide thin films von Lynes, David D, Chandrahalim, Hengky, Brown, Justin M, Singh, Karanvir, Bodily, Kyle T, Leedy, Kevin D

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Investigation of plasmon resonance tunneling through subwavelength hole arrays in highly doped conductive ZnO films von Nader, Nima, Vangala, Shivashankar, Hendrickson, Joshua R., Leedy, Kevin D., Look, David C., Guo, Junpeng, Cleary, Justin W.

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Quantum magnetoconductivity characterization of interface disorder in indium-tin-oxide films on fused silica von Look, David C., Leedy, Kevin D., Santia, Marco D., Badescu, Stefan C.

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Highly conductive homoepitaxial Si-doped Ga2O3 films on (010) β-Ga2O3 by pulsed laser deposition von Leedy, Kevin D., Chabak, Kelson D., Vasilyev, Vladimir, Look, David C., Boeckl, John J., Brown, Jeff L., Tetlak, Stephen E., Green, Andrew J., Moser, Neil A., Crespo, Antonio, Thomson, Darren B., Fitch, Robert C., McCandless, Jonathan P., Jessen, Gregg H.

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Characterization of metal and metal alloy films as contact materials in MEMS switches von Lee, Hyukjae, Coutu, Ronald A, Mall, Shankar, Leedy, Kevin D

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Optical and electrical properties of ultra-thin indium tin oxide nanofilms on silicon for infrared photonics von Cleary, Justin W., Smith, Evan M., Leedy, Kevin D., Grzybowski, Gordon, Guo, Junpeng

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High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge von Moser, Neil A., McCandless, Jonathan P., Crespo, Antonio, Leedy, Kevin D., Green, Andrew J., Heller, Eric R., Chabak, Kelson D., Peixoto, Nathalia, Jessen, Gregg H.

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Two-dimensional BN buffer for plasma enhanced atomic layer deposition of Al2O3 gate dielectrics on graphene field effect transistors von Snure, Michael, Vangala, Shivashankar R., Prusnick, Timothy, Grzybowski, Gordon, Crespo, Antonio, Leedy, Kevin D.

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Lateral β-Ga2O3 field effect transistors von Chabak, Kelson D, Leedy, Kevin D, Green, Andrew J, Mou, Shin, Neal, Adam T, Asel, Thaddeus, Heller, Eric R, Hendricks, Nolan S, Liddy, Kyle, Crespo, Antonio, Miller, Nicholas C, Lindquist, Miles T, Moser, Neil A, Fitch, Robert C, Walker, Dennis E, Dorsey, Donald L, Jessen, Gregg H

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Classical and quantum conductivity in β-Ga2O3 von Look, David C., Leedy, Kevin D.

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Ultra-Low Power Schottky Barrier TFT-Based Neurotransmitter Detection and Regenerative Studies von Barua, Abhijeet, White, Ryan J., Leedy, Kevin D., Chidambaran, Vidya, Jha, Rashmi

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Effects of Ar vs. O2 ambient on pulsed-laser-deposited Ga-doped ZnO von SCOTT, Robin C, LEEDY, Kevin D, BAYRAKTAROGLU, Burhan, LOOK, David C, ZHANG, Yong-Hang

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Pulsed Power Performance of β-Ga₂O₃ MOSFETs at L-Band von Moser, Neil A., Asel, Tadj, Liddy, Kyle J., Lindquist, Miles, Miller, Nicholas C., Mou, Shin, Neal, Adam, Walker, Dennis E., Tetlak, Steve, Leedy, Kevin D., Jessen, Gregg H., Green, Andrew J., Chabak, Kelson D.

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Defect Engineering at the Al2O3/(010) β-Ga2O3 Interface via Surface Treatments and Forming Gas Post-Deposition Anneals von Islam, Ahmad Ehteshamul, Zhang, Chenyu, DeLello, Kursti, Muller, David A., Leedy, Kevin D., Ganguli, Sabyasachi, Moser, Neil A., Kahler, Rachel, Williams, Jeremiah C., Dryden, Daniel M., Tetlak, Stephen, Liddy, Kyle J., Green, Andrew J., Chabak, Kelson D.

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High conductance in ultrathin films of ZnO von Look, David C., Leedy, Kevin D., Thomson, Darren B., Wang, Buguo

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Optical and electronic effects of rapid thermal annealing at Ir–Ga2O3 interfaces von Ramdin, Daram N., Haseman, Micah S., Huang, Hsien-Lien, Leedy, Kevin D., Hwang, Jinwoo, Brillson, Leonard J.

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Effect of fabrication parameters on the ferroelectricity of hafnium zirconium oxide films: A statistical study von Salcedo, Guillermo A., Islam, Ahmad E., Reichley, Elizabeth, Dietz, Michael, Schubert-Kabban, Christine M., Leedy, Kevin D., Back, Tyson C., Wang, Weisong, Green, Andrew, Wolfe, Timothy, Sattler, James M.

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Effect of High Temperature on the Performance of AlGaN/GaN T-Gate High-Electron Mobility Transistors With ~140-nm Gate Length von Islam, Ahmad E., Sepelak, Nicholas P., Miesle, Adam T., Lee, Hanwool, Snure, Michael, Nikodemski, Stefan, Walker, Dennis E., Miller, Nicholas C., Grupen, Matt, Leedy, Kevin D., Liddy, Kyle J., Crespo, Antonio, Hughes, Gary R., Zhu, Wenjuan, Poling, Brian, Tetlak, Stephen, Chabak, Kelson D., Green, Andrew J.

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