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    Analysis of enhanced hole transport in naphthalene dicarboxyimide (NDI)-based n-type polymer field-effect transistors using solution-processed reduced graphene oxide electrodes

    Analysis of enhanced hole transport in naphthalene dicarboxyimide (NDI)-based n-type polymer field-effect transistors using solution-processed reduced graphene oxide electrodes von Ko, Museok, Lee, Yeoryang, Jo, Youngjoo, Jang, Jun Hyeok, Lee, Mi Jung

    Veröffentlicht in Applied surface science

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