An electrically modifiable synapse array of resistive switching memory von Choi, Hyejung, Jung, Heesoo, Lee, Joonmyoung, Yoon, Jaesik, Park, Jubong, Seong, Dong-jun, Lee, Wootae, Hasan, Musarrat, Jung, Gun-Young, Hwang, Hyunsang

Volltext

Investigation of State Stability of Low-Resistance State in Resistive Memory von Jubong Park, Minseok Jo, Bourim, El Mostafa, Jaesik Yoon, Dong-Jun Seong, Joonmyoung Lee, Wootae Lee, Hyunsang Hwang

Volltext

Asymmetric bipolar resistive switching in solution-processed Pt/TiO2/W devices von Biju, Kuyyadi P, Liu, XinJun, Bourim, El Mostafa, Kim, Insung, Jung, Seungjae, Siddik, Manzar, Lee, Joonmyoung, Hwang, Hyunsang

Volltext

Improved Switching Uniformity and Speed in Filament-Type RRAM Using Lightning Rod Effect von PARK, Jubong, JO, Minseok, LEE, Joonmyoung, JUNG, Seungjae, KIM, Seonghyun, LEE, Wootae, SHIN, Jungho, HWANG, Hyunsang

Volltext

Effect of Program/Erase Speed on Switching Uniformity in Filament-Type RRAM von SHIN, Jungho, PARK, Jubong, LEE, Joonmyoung, PARK, Sangsu, KIM, Seonghyun, LEE, Wootae, KIM, Insung, LEE, Daeseok, HWANG, Hyunsang

Volltext

Parallel memristive filaments model applicable to bipolar and filamentary resistive switching von Liu, Xinjun, Biju, Kuyyadi P., Lee, Joonmyoung, Park, Jubong, Kim, Seonghyun, Park, Sangsu, Shin, Jungho, Sadaf, Sharif Md, Hwang, Hyunsang

Volltext

Excellent State Stability of Cu/SiC/Pt Programmable Metallization Cells for Nonvolatile Memory Applications von LEE, Wootae, PARK, Jubong, SON, Myungwoo, LEE, Joonmyoung, JUNG, Seungjae, KIM, Seonghyun, PARK, Sangsu, SHIN, Jungho, HWANG, Hyunsang

Volltext

Operation Voltage Control in Complementary Resistive Switches Using Heterodevice von Daeseok Lee, Jubong Park, Seungjae Jung, Godeuni Choi, Joonmyoung Lee, Seonghyun Kim, Jiyong Woo, Siddik, M., Eujun Cha, Hyunsang Hwang

Volltext

Materials and process aspect of cross-point RRAM (invited) von Lee, Joonmyoung, Jo, Minseok, Seong, Dong-jun, Shin, Jungho, Hwang, Hyunsang

Volltext

New Set/Reset Scheme for Excellent Uniformity in Bipolar Resistive Memory von PARK, Jubong, JO, Minseok, JUNG, Seungjae, LEE, Joonmyoung, LEE, Wootae, KIM, Seonghyun, PARK, Sangsu, SHIN, Jungho, HWANG, Hyunsang

Volltext

Excellent Selector Characteristics of Nanoscale VO2 for High-Density Bipolar ReRAM Applications von SON, Myungwoo, LEE, Joonmyoung, PARK, Jubong, SHIN, Jungho, CHOI, Godeuni, JUNG, Seungjae, LEE, Wootae, KIM, Seonghyun, PARK, Sangsu, HWANG, Hyunsang

Volltext

Nanoscale Resistive Switching of a Copper-Carbon-Mixed Layer for Nonvolatile Memory Applications von Hyejung Choi, Myeongbum Pyun, Tae-Wook Kim, Hasan, M., Rui Dong, Joonmyoung Lee, Ju-Bong Park, Jaesik Yoon, Dong-jun Seong, Takhee Lee, Hyunsang Hwang

Volltext

Improved switching uniformity of a carbon-based conductive-bridge type ReRAM by controlling the size of conducting filament von Park, Jubong, Jo, Minseok, Lee, Joonmyoung, Jung, Seungjae, Lee, Wootae, Kim, Seonghyun, Park, Sangsu, Shin, Jungho, Hwang, Hyunsang

Volltext

Noise-Analysis-Based Model of Filamentary Switching ReRAM With \hbox/\hbox Stacks von Daeseok Lee, Joonmyoung Lee, Minseok Jo, Jubong Park, Siddik, M., Hyunsang Hwang

Volltext

Effect of \hbox\hbox\hbox Thermal Barrier on Reset Operations in Filament-Type Resistive Memory von Wootae Lee, Siddik, M., Seungjae Jung, Jubong Park, Seonghyun Kim, Jungho Shin, Joonmyoung Lee, Sangsu Park, Myungwoo Son, Hyunsang Hwang

Volltext

Excellent Selector Characteristics of Nanoscale \hbox for High-Density Bipolar ReRAM Applications von Son, Myungwoo, Lee, Joonmyoung, Park, Jubong, Shin, Jungho, Choi, Godeuni, Jung, Seungjae, Lee, Wootae, Kim, Seonghyun, Park, Sangsu, Hwang, Hyunsang

Volltext

Proton Irradiation Effects on Resistive Random Access Memory With ZrO /HfO Stacks von Daeseok Lee, Joonmyoung Lee, Seungjae Jung, Seonghyun Kim, Jubong Park, Biju, K. P., Minhyeok Choe, Takhee Lee, Hyunsang Hwang

Volltext

Multibit Operation of \hbox -Based ReRAM by Schottky Barrier Height Engineering von Jubong Park, Biju, K P, Seungjae Jung, Wootae Lee, Joonmyoung Lee, Seonghyun Kim, Sangsu Park, Jungho Shin, Hyunsang Hwang

Volltext

Effect of ZrOx/HfOx bilayer structure on switching uniformity and reliability in nonvolatile memory applications von Lee, Joonmyoung, Bourim, El Mostafa, Lee, Wootae, Park, Jubong, Jo, Minseok, Jung, Seungjae, Shin, Jungho, Hwang, Hyunsang

Volltext

Feasibility Study of \hbox/\hbox Resistive Random Access Memory in an Inverter Circuit for FPGA Applications von Sangsu Park, Jungho Shin, Cimino, S., Seungjae Jung, Joonmyoung Lee, Seonghyun Kim, Jubong Park, Wootae Lee, Myungwoo Son, Byunghun Lee, Pantisano, L., Hyunsang Hwang

Volltext