A 1.1 V 2y-nm 4.35 Gb/s/pin 8 Gb LPDDR4 Mobile Device With Bandwidth Improvement Techniques von Song, Keunsoo, Lee, Sangkwon, Kim, Dongkyun, Shim, Youngbo, Park, Sangil, Ko, Bokrim, Hong, Duckhwa, Joo, Yongsuk, Lee, Wooyoung, Cho, Yongdeok, Shin, Wooyeol, Yun, Jaewoong, Lee, Hyengouk, Lee, Jeonghun, Lee, Eunryeong, Jang, Namkyu, Yang, Jaemo, Jung, Hae-kang, Cho, Joohwan, Kim, Hyeongon, Kim, Jinkook

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Understanding ovonic threshold switching of GeSe chalcogenide materials using electrical methodologies for extracting density of states von Kim, Donguk, Yang, Tae Jun, Choi, Woo Sik, Lee, Hee Jun, Jang, Jun Tae, Hong, Eunryeong, Yang, Woo Young, Choi, Minwoo, Yang, Ki Yeon, Lee, Chang Seung, Woo, Jiyong, Kim, Dae Hwan

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Linear Synaptic Weight Update in Selector-Less HfO₂ RRAM Using Al₂O₃ Built-In Resistor for Neuromorphic Computing Systems von Kim, Yunsur, Kim, Hyejin, Jeon, Seonuk, Kim, Hyun Wook, Hong, Eunryeong, Kim, Nayeon, Choi, Hyeonsik, Park, Hyoungjin, Jeong, Jiae, Lee, Daeseok, Woo, Jiyong

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Read Disturbances in Cross-Point Phase-Change Memory Arrays-Part I: Physical Modeling With Phase-Change Dynamics von Kim, Donguk, Jang, Jun Tae, Kim, Changwook, Kim, Hyun Wook, Hong, Eunryeong, Ban, Sanghyun, Shin, Minchul, Lee, Hanwool, Lee, Hyung Dong, Mo, Hyun-Sun, Woo, Jiyong, Kim, Dae Hwan

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Read Disturbance in Cross-Point Phase-Change Memory Arrays-Part II: Array Simulations Considering External Currents von Kim, Donguk, Jang, Jun Tae, Kim, Changwook, Kim, Hyun Wook, Hong, Eunryeong, Ban, Sanghyun, Shin, Minchul, Lee, Hanwool, Lee, Hyung Dong, Mo, Hyun-Sun, Woo, Jiyong, Kim, Dae Hwan

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