Delay Analysis of Graphene Field-Effect Transistors von Han Wang, Hsu, Allen, Dong Seup Lee, Ki Kang Kim, Jing Kong, Palacios, Tomas

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Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs von Lee, Ethan S., Joh, Jungwoo, Lee, Dong Seup, del Alamo, Jesús A.

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300-GHz InAlN/GaN HEMTs With InGaN Back Barrier von Dong Seup Lee, Xiang Gao, Shiping Guo, Kopp, D., Fay, P., Palacios, T.

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GaN high electron mobility transistors for sub-millimeter wave applications von Lee, Dong Seup, Liu, Zhihong, Palacios, Tomás

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InAlN/GaN HEMTs With AlGaN Back Barriers von Dong Seup Lee, Xiang Gao, Shiping Guo, Palacios, T

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AlGaN/GaN High-Electron-Mobility Transistors Fabricated Through a Au-Free Technology von Hyung-Seok Lee, Dong Seup Lee, Palacios, T

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245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment von Dong Seup Lee, Chung, Jinwook W, Han Wang, Xiang Gao, Shiping Guo, Fay, Patrick, Palacios, Tomás

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Nanowire Channel InAlN/GaN HEMTs With High Linearity of gm and fT von DONG SEUP LEE, HAN WANG, SAUNIER, Paul, PALACIOS, Tomás, ALLEN HSU, AZIZE, Mohamed, LABOUTIN, Oleg, YU CAO, JOHNSON, Jerry Wayne, BEAM, Edward, KETTERSON, Andrew, SCHUETTE, Michael L

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Impact of Al2O3 Passivation Thickness in Highly Scaled GaN HEMTs von DONG SEUP LEE, LABOUTIN, Oleg, YU CAO, JOHNSON, Wayne, BEAM, Edward, KETTERSON, Andrew, SAUNIER, Paul, PALACIOS, Tomás

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Device Delay in GaN Transistors Under High Drain Bias Conditions von Lee, Dong Seup, Laboutin, Oleg, Cao, Yu, Johnson, Jerry Wayne, Beam, Edward, Ketterson, Andrew, Schuette, Michael L., Saunier, Paul, Palacios, Tomas

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Recessed Channel Dual Gate Single Electron Transistors (RCDG-SETs) for Room Temperature Operation von PARK, Sang Hyuk, KANG, Sangwoo, CHO, Seongjae, LEE, Dong-Seup, LEE, Jung Han, YANG, Hong-Seon, KANG, Kwon-Chil, LEE, Joung-Eob, LEE, Jong Duk, PARK, Byung-Gook

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Impact of \hbox\hbox Passivation Thickness in Highly Scaled GaN HEMTs von Dong Seup Lee, Laboutin, O., Yu Cao, Johnson, W., Beam, E., Ketterson, A., Schuette, M., Saunier, P., Palacios, T.

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Physics-based GaN HEMT transport and charge model: Experimental verification and performance projection von Radhakrishna, Ujwal, Lan Wei, Dong-Seup Lee, Palacios, T., Antoniadis, D.

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Nanowire Channel InAlN/GaN HEMTs With High Linearity of g and f von Lee, Dong Seup, Wang, Han, Hsu, Allen, Azize, Mohamed, Laboutin, Oleg, Cao, Yu, Johnson, Jerry Wayne, Beam, Edward, Ketterson, Andrew, Schuette, Michael L., Saunier, Paul, Palacios, Tomas

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Fabrication and Characteristics of Self-Aligned Dual-Gate Single-Electron Transistors von DONG SEUP LEE, KANG, Sangwoo, KANG, Kwon-Chil, LEE, Joung-Eob, JUNG HOON LEE, SONG, Kwan-Jae, DONG MYONG KIM, JONG DUK LEE, PARK, Byung-Gook

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Simulation of Gate-All-Around Tunnel Field-Effect Transistor with an n-Doped Layer von LEE, Dong Seup, YANG, Hong-Seon, KANG, Kwon-Chil, LEE, Joung-Eob, LEE, Jung Han, CHO, Seongjae, PARK, Byung-Gook

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High linearity nanowire channel GaN HEMTs von Dong Seup Lee, Han Wang, Hsu, Allen, Azize, Mohamed, Laboutin, Oleg, Yu Cao, Johnson, Wayne, Beam, Edward, Ketterson, Andrew, Schuette, Michael, Saunier, Paul, Palacios, Tomas

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Silicon-Based Dual-Gate Single-Electron Transistors for Logic Applications von Lee, Dong Seup, Yang, Hong-Seon, Kang, Kwon-Chil, Lee, Joung-Eob, Lee, Jung Han, Park, Sang Hyuk, Park, Byung-Gook

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InAIN/GaN HEMTs With AlGaN Back Barriers von LEE, Dong Seup, XIANG GAO, SHIPING GUO, PALACIOS, Tomás

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317 GHz InAlGaN/GaN HEMTs with extremely low on-resistance von Lee, Dong Seup, Laboutin, Oleg, Cao, Yu, Johnson, Wayne, Beam, Edward, Ketterson, Andrew, Schuette, Michael, Saunier, Paul, Kopp, David, Fay, Patrick, Palacios, Tomás

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