SiC Technology von Elpelt, Rudolf, Piccioni, Andrea, Choi, Jake, Lee, Byeongyeop, Lee, Sandol, Salmen, Paul, Zschieschang, Olaf, Fahlbusch, Sebastian, Takeda, Ryo, Arai, Takamasa, Vaughan-Edmunds, Llew, Veliadis, Victor

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A unified global model accompanied with a voltage and current sensor for low-pressure capacitively coupled RF discharge von Seong, Inho, Kim, Sijun, Lee, Woobeen, Lee, Youngseok, Cho, Chulhee, Jeong, Wonnyoung, Choi, Minsu, Choi, Byeongyeop, Seo, Huichan, Song, Sangheon, You, Shinjae

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Characterization of SiO2 Plasma Etching with Perfluorocarbon (C4F8 and C6F6) and Hydrofluorocarbon (CHF3 and C4H2F6) Precursors for the Greenhouse Gas Emissions Reduction von Choi, Minsu, Lee, Youngseok, You, Yebin, Cho, Chulhee, Jeong, Wonnyoung, Seong, Inho, Choi, Byeongyeop, Kim, Sijun, Seol, Youbin, You, Shinjae, Yeom, Geun Young

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Characterization of SiO[sub.2] Plasma Etching with Perfluorocarbon Precursors for the Greenhouse Gas Emissions Reduction von Choi, Minsu, Lee, Youngseok, You, Yebin, Cho, Chulhee, Jeong, Wonnyoung, Seong, Inho, Choi, Byeongyeop, Kim, Sijun, Seol, Youbin, You, Shinjae, Yeom, Geun Young

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On the Quenching of Electron Temperature in Inductively Coupled Plasma von Seong, Inho, Kim, Si-Jun, Lee, Youngseok, Cho, Chulhee, Jeong, Wonnyoung, You, Yebin, Choi, Minsu, Choi, Byeongyeop, You, Shinjae

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