Long-wavelength quantum-dot lasers on GaAs substrates: from media to device concepts von Ledentsov, N.N.

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The role of Auger recombination in the temperature-dependent output characteristics (T=∞) of p-doped 1.3 μm quantum dot lasers von Fathpour, S., Mi, Z., Bhattacharya, P., Kovsh, A. R., Mikhrin, S. S., Krestnikov, I. L., Kozhukhov, A. V., Ledentsov, N. N.

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Close-to-ideal device characteristics of high-power InGaAs/GaAs quantum dot lasers von Sellin, R. L., Ribbat, Ch, Grundmann, M., Ledentsov, N. N., Bimberg, D.

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High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser von Rafailov, E. U., Cataluna, M. A., Sibbett, W., Il’inskaya, N. D., Zadiranov, Yu. M., Zhukov, A. E., Ustinov, V. M., Livshits, D. A., Kovsh, A. R., Ledentsov, N. N.

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InGaAs-GaAs quantum-dot lasers von Bimberg, D., Kirstaedter, N., Ledentsov, N.N., Alferov, Zh.I., Kop'ev, P.S., Ustinov, V.M.

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Submonolayer quantum dots for high speed surface emitting lasers von Ledentsov, Nn, Bimberg, D, Hopfer, F, Mutig, A, Shchukin, Va, Savel'ev, Av, Fiol, G, Stock, E, Eisele, H, Dähne, M, Gerthsen, D, Fischer, U, Litvinov, D, Rosenauer, A, Mikhrin, Ss, Kovsh, Ar, Zakharov, Nd, Werner, P

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Quantum-dot heterostructure lasers von Ledentsov, N.N., Grundmann, M., Heinrichsdorff, F., Bimberg, D., Ustinov, V.M., Zhukov, A.E., Maximov, M.V., Alferov, Zh.I., Lott, J.A.

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InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 mu m von Lott, J A, Ledentsov, N N, Ustinov, V M, Maleev, N A, Zhukov, A E, Kovsh, A R, Maximov, M V, Volovik, B V, Alferov, Zh I, Bimberg, D

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InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm von Ustinov, V. M., Maleev, N. A., Zhukov, A. E., Kovsh, A. R., Egorov, A. Yu, Lunev, A. V., Volovik, B. V., Krestnikov, I. L., Musikhin, Yu. G., Bert, N. A., Kop’ev, P. S., Alferov, Zh. I., Ledentsov, N. N., Bimberg, D.

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Quantum dot lasers: breakthrough in optoelectronics von Bimberg, D., Grundmann, M., Heinrichsdorff, F., Ledentsov, N.N., Ustinov, V.M., Zhukov, A.E., Kovsh, A.R., Maximov, M.V., Shernyakov, Y.M., Volovik, B.V., Tsatsul’nikov, A.F., Kop’ev, P.S., Alferov, Zh.I.

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InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain von Kovsh, A.R., Maleev, N.A., Zhukov, A.E., Mikhrin, S.S., Vasil’ev, A.P., Semenova, E.A., Shernyakov, Yu.M., Maximov, M.V., Livshits, D.A., Ustinov, V.M., Ledentsov, N.N., Bimberg, D., Alferov, Zh.I.

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InAs/InGaAs/GaAs quantum dot lasers of 1.3 mu m range with high (88%) differential efficiency von Kovsh, A R, Maleev, N A, Zhukov, A E, Mikhrin, S S, Vasil'ev, A P, Shernyakov, Yu M, Maximov, M V, Livshits, D A, Ustinov, V M, Alferov, Zh I, Ledentsov, N N, Bimberg, D

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On gain saturation in quantum dot semiconductor optical amplifiers von Uskov, A.V., O’Reilly, E.P., Laemmlin, M., Ledentsov, N.N., Bimberg, D.

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Complete suppression of filamentation and superior beam quality in quantum-dot lasers von Ribbat, Ch, Sellin, R. L., Kaiander, I., Hopfer, F., Ledentsov, N. N., Bimberg, D., Kovsh, A. R., Ustinov, V. M., Zhukov, A. E., Maximov, M. V.

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On ultrafast optical switching based on quantum-dot semiconductor optical amplifiers in nonlinear interferometers von Uskov, A.V., O'Reilly, E.P., Manning, R.J., Webb, R.P., Cotter, D., Laemmlin, M., Ledentsov, N.N., Bimberg, D.

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Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers von Kirstaedter, N., Schmidt, O. G., Ledentsov, N. N., Bimberg, D., Ustinov, V. M., Egorov, A. Yu, Zhukov, A. E., Maximov, M. V., Kop’ev, P. S., Alferov, Zh. I.

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Growth of self-organized quantum dots for optoelectronics applications: nanostructures, nanoepitaxy, defect engineering von Ledentsov, N.N, Bimberg, D

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Carrier-induced refractive index in quantum dot structures due to transitions from discrete quantum dot levels to continuum states von Uskov, A. V., O’Reilly, E. P., McPeake, D., Ledentsov, N. N., Bimberg, D., Huyet, G.

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Arrays of Two-Dimensional Islands Formed by Submonolayer Insertions: Growth, Properties, Devices von Krestnikov, I.L., Ledentsov, N.N., Hoffmann, A., Bimberg, D.

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1.24 μ m InGaAs/GaAs quantum dot laser grown by metalorganic chemical vapor deposition using tertiarybutylarsine von Kaiander, I. N., Sellin, R. L., Kettler, T., Ledentsov, N. N., Bimberg, D., Zakharov, N. D., Werner, P.

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