Investigation of ion-implantation damage with x-ray double reflection von Lecrosnier, D. P., Pelous, G. P., Burgeat, J.

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Ion-implanted FET for power applications von Lecrosnier, D.P., Pelous, G.P.

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Investigation of Ion Implantation Damage with X-Ray Double Reflection von Lecrosnier, D. P., Pelous, G. P., Burgeat, J.

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Secondary Defects in Boron Implanted Silicon von Pelous, G. P., Lecrosnier, D. P., Henoc, P.

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Schottky and field-effect transistor fabrication on InP and GaInAs von Loualiche, S., L’Haridon, H., Le Corre, A., Lecrosnier, D., Salvi, M., Favennec, P. N.

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Schottky diode and field-effect transistor on InP von LOUALICHE, S, GINOUDI, A, L'HARIDON, H, SALVI, M, LE CORRE, A, LECROSNIER, D, FAVENNEC, P. N

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Influence of oxygen incorporation on beryllium-doped InGaAs grown by molecular beam epitaxy von LE CORRE, A, CAULET, J, GAUNEAU, M, LOUALICHE, S, L'HARIDON, H, LECROSNIER, D, ROIZES, A, DAVID, J. P

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X-ray photoelectron diffraction applied to crystallinity studies of III-V surfaces von Olivier, J, Alnot, P, Wyczisk, F, Henry, L, Lecrosnier, D

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Epitaxial growth of lattice matched metallic ErP0.6As0.4 on (001) and (111) GaAs with a gsmbe system von LE CORRZ, A, GUENAIS, B, GUIVAR'H, A, LECROSNIER, D, CAULET, J, MINIER, M, ROPARS, G

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Schottky and field-effect transistor fabrication on InP and GalnAs von LOUALICHE, S, L'HARIDON, H, LE CORRE, A, LECROSNIER, D, SALVI, M, FAVENNEC, P. N

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Aging behavior of InP substrates prepared with 2 different epi-ready processes von Regreny, P., Jacob, G., Gendry, M., Hollinger, G., Gauneau, M., Lecrosnier, D., Benyattou, T.

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A study of parasitic effects in MBE-grown InAlAs/InGaAs/InAlAs HEMT's von Dumas, J.M., Audren, P., Paugam, J., Favennec, M.P., Vuchener, C., Lecrosnier, D.

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Evaluation of InP Epi-ready wafers for epitaxial growth von Overs, A., Jacob, G., Besland, M.P., Drouot, V., Gendry, M., Hollinger, G., Gauneau, M., Lecrosnier, D., Benchimol, J.L.

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High Performance Schottky Diode and FET on InP von Loualiche, S., Ginoudi, A., L'Haridon, H., Salvi, M., Le Corre, A., Lecrosnier, D., Favennec, P.N.

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An investigation of deep levels in InAlAs/n/sup +/-InGaAs heterostructure FETs von Dumas, J.M., Audren, P., Favennec, M.P., Lecrosnier, D., Bahl, S.R., del Alamo, J.A.

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