Impact ionization resonance and auger recombination in Hg1 - xCdxTe (0.6 ≤ x ≤ 0.7) von Lecoy, G., Orsal, B., Alabedra, R.

Volltext

Hg0.4Cd0.6Te 1.55-μm avalanche photodiode noise analysis in the vicinity of resonant impact ionization connected with the spin-orbit split-off band von ORSAL, B, ALABEDRA, R, VALENZA, M, LECOY, G. P, MESLAGE, J, BOISROBERT, C. Y

Volltext

Impact ionization resonance and Auger recombination in Hg sub(1-x)Cd sub(x)Te (0.6 less than or equal to x less than or equal to 0.7) von Lecoy, G P, Orsal, B, Alabedra, R

Volltext

Hg sub(0.4)Cd sub(0.6)Te 1.55- mu m avalanche photodiode noise analysis in the vicinity of resonant impact ionization connected with the spin-orbit split-off band von Orsal, B, Alabedra, R, Valenza, M, Lecoy, G P, Meslage, J, Boisrobert, C Y

Volltext

An Hg0.3Cd0.7Te avalanche photodiode for optical-fiber transmission systems at λ = 1.3 µm von Alabedra, R., Orsal, B., Lecoy, G., Pichard, G., Meslage, J., Fragnon, P.

Volltext

An Hg 0.3 Cd 0.7 Te avalanche photodiode for optical-fiber transmission systems at λ = 1.3 µm von Alabedra, R., Orsal, B., Lecoy, G., Pichard, G., Meslage, J., Fragnon, P.

Volltext

An Hg0.3Cd0.7Te avalanche photodiode for optical-fiber transmission systems at λ=1.3μm von ALABEDRA, R, ORSAL, B, LECOY, G, PICHARD, G, MESLAGE, J, FRAGNON, P

Volltext

Hg sub(0.3)Cd sub(0.7)Te avalanche photodiode for optical-fiber transmission systems at lambda = 1.3 mu m von Alabedra, R, Orsal, B, Lecoy, G, Pichard, G, Meslage, J, Fragnon, P

Volltext

A novel method for base and emitter resistance extraction in bipolar junction transistors from static and low frequency noise measurements von Llinares, P., Ghibaudo, G., Gambetta, N., Mourier, Y., Monroy, A., Lecoy, G., Chroboczek, J.A.

Volltext bestellen

Noise of hot carriers in the channel of n silicon junction gate field effect transistors von Nougier, J.P., Sodini, D., Rolland, M., Gasquet, D., Lecoy, G.

Volltext

A possibility for the determination of the microscopic mobility of carriers in semiconductors under SCLC conditions von Fillard, J.P., Lecoy, G., Savelli, M.

Volltext

Preliminary results on GeSnO2Ag space charge structures von Fillard, J.P., Lecoy, G., Bonnet, G., Manifacier, J.C., Rigaud, D.

Volltext

Analysis of the thermal noise behaviour in JG FET at low temperature von Rigaud, D., Nougier, J-P., Touboul, A., Lecoy, G.

Volltext

Study of the conducting channel of the JG FET application to the noise in saturation range von Rigaud, D., Nougier, J.P., Sodini, D., Lecoy, G.

Volltext