Solid phase crystallization of thin films of Si prepared by plasma-enhanced chemical vapor deposition von MASAKI, Y, LECOMBER, P. G, FITZGERALD, A. G

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Numerical simulations of amorphous and polycrystalline silicon thin-film transistors von HACK, M, SHAW, J. G, LECOMBER, P. G, WILLUMS, M

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Exploratory observations of random telegraphic signals and noise in homogeneous hydrogenated amorphous silicon von CHOI, W. K, OWEN, A. E, LECOMBER, P. G, ROSE, M. J

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Applications of amorphous silicon devices von LeComber, P G

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Application of amorphous silicon field effect transistors in addressable liquid crystal display panels von Snell, A. J., Mackenzie, K. D., Spear, W. E., LeComber, P. G., Hughes, A. J.

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Transient and stress effects in amorphous silicon thin-film transistors von Hack, M., Weisfield, R., Steemers, H., Thompson, M. J., Willums, M. F., Lecomber, P. G.

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A new amorphous silicon reflective sensor optimized for bar-code reading von Snell, A.J., LeComber, P.G., Barnett, C.F., Sims, G.E., Rose, M.J.

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Potential distribution and interface states in the input stage of an amorphous silicon thin-film transistor von Long, A. R., Chahdi, M., Rodley, D. G., Nonomura, S., Lecomber, P. G.

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Comments on the calculation of the extended state electron mobility in amorphous silicon von Marshall, J.M., LeComber, P.G., Spear, W.E.

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Structural and electrical properties of SiNx:H films von MASAKI, Y, GIBSON, R. A. G, LECOMBER, P. G

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A new vertically integrated amorphous silicon addressable image sensor von Snell, A. J., Doghmane, A., LeComber, P. G., Spear, W. E.

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Applications and defects in amorphous silicon von LeComber, P.G.

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Focused session on device physics von LeComber, P.G.

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Quantized electron transport in amorphous-silicon memory structures von Hajto, J, Owen, AE, Gage, SM, Snell, AJ, LeComber, PG, Rose, MJ

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The switching mechanism in amorphous silicon junctions von Lecomber, P.G., Owen, A.E., Spear, W.E., Hajto, J., Snell, A.J., Choi, W.K., Rose, M.J., Reynolds, S.

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ODMR detected via the electroluminescence in p+-i-n+ a-Si:H cells von Homewood, K P, Cavenett, B C, Austin, I G, Searle, T M, Spear, W E, LeComber, P G

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Density-of-states and transient simulations of amorphous-silicon devices von Shaw, John G., Hack, Mike, LeComber, P.G., Willums, M.

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Amorphous silicon analogue memory devices von Rose, M.J., Hajto, J., Lecomber, P.G., Gage, S.M., Choi, W.K., Snell, A.J., Owen, A.E.

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The characteristics and properties of optimised amorphous silicon field effect transistors von Mackenzie, K. D., Snell, A. J., French, I., LeComber, P. G., Spear, W. E.

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Analogue memory effects in metal/a-Si:H/Metal memory devices von Snell, A.J., Lecomber, P.G., Hajto, J., Rose, M.J., Owen, A.E., Osborne, I.S.

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