Epitaxial lift-off of InGaAs solar cells from InP substrate using a strained AlAs/InAlAs superlattice as a novel sacrificial layer von Chancerel, F., Regreny, P., Leclercq, J.L., Brottet, S., Volatier, M., Jaouad, A., Darnon, M., Fafard, S., Blanchard, N.P., Gendry, M., Aimez, V.

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Switching devices with spatial and spectral resolution combining photonic crystal and MOEMS structures von Letartre, X., Mouette, J., Leclercq, J.L., Rojo Romeo, P., Seassal, C., Viktorovitch, P.

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A phase-matching and pseudoresonance-enhanced design for tunable micromachined photodetectors von Zhou, D., Garrigues, M., Leclercq, J.L., Peng, J., Viktorovitch, P.

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Highly selective and widely tunable 1.55-μm InP/air-gap micromachined Fabry-Perot filter for optical communications von Spisser, A., Ledantec, R., Seassal, C., Leclercq, J.L., Benyattou, T., Rondi, D., Blondeau, R., Guillot, G., Viktorovitch, P.

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Triangular and hexagonal high Q-factor 2-D photonic bandgap cavities on III-V suspended membranes von Pottier, P., Seassal, C., Letartre, X., Leclercq, J.L., Viktorovitch, P., Cassagne, D., Jouanin, C.

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Compact 1.55 µm room-temperature optically pumped VCSEL using photonic crystal mirror von Boutami, S., Ben Bakir, B., Regreny, P., Leclercq, J.L., Viktorovitch, P.

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III-V Semiconductor based MOEMS devices for optical telecommunications von Garrigues, M., Leclercq, J.L., Viktorovitch, P.

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Feasibility of III–V on-silicon strain relaxed substrates von Kostrzewa, M., Grenet, G., Regreny, P., Leclercq, J.L., Perreau, P., Jalaguier, E., Di Cioccio, L., Hollinger, G.

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Tunable microcavity based on InP-air Bragg mirrors von Le Dantec, R., Benyattou, T., Guillot, G., Spisser, A., Seassal, C., Leclercq, J.L., Viktorovitch, P., Rondi, D., Blondeau, R.

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High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach von Damlencourt, J. F., Leclercq, J. L., Gendry, M., Regreny, P., Hollinger, G.

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Low frequency noise sources in InAlAs/InGaAs MODFETs von Viktorovitch, P., Rojo-Romeo, P., Leclercq, J.L., Letartre, X., Tardy, J., Oustric, M., Gendry, M.

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Micromachined planar spiral inductor in standard GaAs HEMT MMIC technology von Ribas, R.P., Lescot, J., Leclercq, J.L., Bennouri, N., Karam, J.M., Courtois, B.

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GaAlAs-Based Micromachined Accelerometer von Konczewicz, L., Lee, H.Y., Sadowski, M.L., Letartre, X., Leclercq, J.L., Viktorovitch, P., Robert, J.L.

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Bulk micromachining characterization of 0.2 μm HEMT MMIC technology for GaAs MEMS design von Ribas, R.P, Leclercq, J.L, Karam, J.M, Courtois, B, Viktorovitch, P

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Surface operation photonic devices based on two dimensional InP membrane photonic crystals von Letartre, X., Mouette, J., Hattori, H., Seassal, C., Leclercq, J.L., Rojo-Romeo, P., Viktorovitch, P.

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1.55 μm VCSELs with InP/air-gap distributed bragg reflectors von STRASSNER, M, REGRENY, P, BOUCHOULE, S, CHITICA, N, SAINT-GIRONS, G, SAGNES, I, JACQUET, J, LECLERCQ, J.-L

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Optical properties and fluctuations of composition in Ga 0.77In 0.23As 0.19Sb 0.81 alloys von Tronc, P., Reid, B., Maciejko, R., Leclercq, J.L., Lazzari, J.L.

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Liquid phase epitaxial growth of AlGaAsSb on GaSb von Lazzari, J.L., Leclercq, J.L., Grunberg, P., Joullié, A., Lambert, B., Barbusse, D., Fourcade, R.

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Tunable InP/air gap Fabry Perot filter for wavelength division multiplex fiber optical transmission von Daleiden, J., Chitica, N., Strassner, M., Spisser, A., Leclercq, J.L., Viktorovitch, P., Rondi, D., Goutin, E., Peerlings, J., Pfeiffer, J., Riemenschneider, R., Hjort, K.

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Critical layer thickness in AlGaAsSbGaSb heterostructures determined by X-ray diffraction von Lazzari, J.L., Fouillant, C., Grunberg, P., Leclercq, J.L., Joullié, A., Schiller, C.

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