Structural and electronic properties of graphite layers grown on SiC(0 0 0 1) von Seyller, Th, Emtsev, K.V., Gao, K., Speck, F., Ley, L., Tadich, A., Broekman, L., Riley, J.D., Leckey, R.C.G., Rader, O., Varykhalov, A., Shikin, A.M.

Volltext

Electronic properties of clean unreconstructed 6H–SiC(0 0 0 1) surfaces studied by angle resolved photoelectron spectroscopy von Emtsev, K.V., Seyller, Th, Ley, L., Tadich, A., Broekman, L., Riley, J.D., Leckey, R.C.G., Preuss, M.

Volltext

Initial Stages of the Graphite-SiC(0001) Interface Formation Studied by Photoelectron Spectroscopy von Seyller, Thomas, Stojanov, P., Leckey, R.C.G., Riley, J.D., Emtsev, Konstantin V., Speck, Florian, Ley, Lothar

Volltext

MBE growth of MgSe thin films on ZnSe/GaAs(001) substrates von Feng, P X, Riley, J D, Leckey, R C G, Ley, L

Volltext

Apparent “three-dimensional” Fermi surface of transition-metal monolayers von Rader, O., Wolf, H., Gudat, W., Tadich, A., Broekman, L., Huwald, E., Leckey, R. C. G., Riley, J. D., Shikin, A. M., Matsui, F., Miyata, H., Daimon, H.

Volltext

An effect of phonon on electron mean-free-path in ionic crystals von Feng, P.X., Leckey, R.C.G.

Volltext

Surface, interface and bulk properties of GaAs(111)B treated by Se layers von Feng, P X, Riley, J D, Leckey, R C G, Pigram, P J, Seyller, T, Ley, L

Volltext

Correlation effects at ideal SiC { 0001 } − ( 1 × 1 ) surfaces von Emtsev, K. V., Seyller, Th, Ley, L., Broekman, L., Tadich, A., Riley, J. D., Leckey, R. G. C., Preuss, M.

Volltext

Solid‐state bandpass detector for inverse photoemission spectroscopy von Sheils, W., Leckey, R. C. G., Riley, J. D.

Volltext

The use of symmetry for absolute E( K) determinations from IPS measurements of face-centred cubic crystals von Sheils, W, Riley, J.D, Leckey, R.C.G

Volltext

Electronic states of an ordered oxide on C-terminated 6H–SiC von Hollering, M., Maier, F., Sieber, N., Stammler, M., Ristein, J., Ley, L., Stampfl, A.P.J., Riley, J.D., Leckey, R.C.G., Leisenberger, F.P., Netzer, F.P.

Volltext

Publisher's Note: Correlation effects at ideal SiC { 0001 } − ( 1 × 1 ) surfaces [Phys. Rev. B 73 , 075412 (2006)] von Emtsev, K. V., Seyller, Th, Ley, L., Broekman, L., Tadich, A., Riley, J. D., Leckey, R. G. C., Preuss, M.

Volltext

Semiconductor band structure as determined from angle resolved photoelectron spectroscopy von Leckey, R. C. G., Riley, J. D.

Volltext

Fermi Surface of Disordered Cu3Au as Determined by Angle-resolved Photoemission von Con Foo, J. A., Tkatchenko, S., Stampfl, A. P. J., Ziegler, A., Mattern, B., Hollering, M., Denecke, R., Ley, L., Riley, J. D., Leckey, R. C. G.

Volltext

Conduction-band states in GaSb(110) and GaP(110) at the Brillouin-zone center von FAUL, J, NEUHOLD, G, LEY, L, FRAXEDAS, J, ZOLLNER, S, RILEY, J. D, LECKEY, R. C. G

Volltext

Scattering of 2-20 keV electrons in aluminium von Green, A J, Leckey, R C G

Volltext

Al 2 O 3 prepared by atomic layer deposition as gate dielectric on 6H-SiC(0001) von Gao, K. Y., Seyller, Th, Ley, L., Ciobanu, F., Pensl, G., Tadich, A., Riley, J. D., Leckey, R. G. C.

Volltext

Surface Band Structure Studies of Si Rich Reconstructions on 4H-SiC(1-100) von Tadich, A., Broekman, L., Huwald, E., Seyller, Thomas, Leckey, R.C.G., Riley, J.D., Emtsev, Konstantin V., Ley, Lothar

Volltext

The Atomic Structure of the Hydrogen Saturated a-Planes of 4H-SiC von Tadich, A., Seyller, Thomas, James, D., Leckey, R.C.G., Riley, J.D., Emtsev, Konstantin V., Sieber, N., Ley, Lothar, Graupner, R., Polcik, M.

Volltext

Photoemission Studies of Surface, Interface and Bulk Properties of GaAs (001) Treated by Mg von Feng, P X, Riley, J D, Leckey, R C G

Volltext