Investigation of epitaxial graphene via Raman spectroscopy: Origins of phonon mode asymmetries and line width deviations von Hähnlein, B., Lebedev, S.P., Eliseyev, I.A., Smirnov, A.N., Davydov, V.Y., Zubov, A.V., Lebedev, A.A., Pezoldt, J.

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REFMAC5 dictionary: organization of prior chemical knowledge and guidelines for its use von Vagin, Alexei A., Steiner, Roberto A., Lebedev, Andrey A., Potterton, Liz, McNicholas, Stuart, Long, Fei, Murshudov, Garib N.

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High-Speed Growth of 4H-SiC Single Crystal Using Si-Cr Based Melt von Bessho, Takeshi, Sakamoto, Hidemitsu, Kamei, Kazuhito, Daikoku, Hironori, Moriguchi, Kouji, Kado, Motohisa, Yashiro, Nobuyoshi, Kusunoki, Kazuhiko, Suzuki, Hiroshi, Okada, Nobuhiro

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High Temperature Digital and Analogue Integrated Circuits in Silicon Carbide von Finney, S., Ramsay, Ewan P., Murphy, A.E., Smith, Dave A., Thompson, Robin. F., Young, R.A.R., Cormack, Jennifer D., Clark, David T.

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CCP4 Cloud for structure determination and project management in macromolecular crystallography von Krissinel, Eugene, Lebedev, Andrey A., Uski, Ville, Ballard, Charles B., Keegan, Ronan M., Kovalevskiy, Oleg, Nicholls, Robert A., Pannu, Navraj S., Skubák, Pavol, Berrisford, John, Fando, Maria, Lohkamp, Bernhard, Wojdyr, Marcin, Simpkin, Adam J., Thomas, Jens M. H., Oliver, Christopher, Vonrhein, Clemens, Chojnowski, Grzegorz, Basle, Arnaud, Purkiss, Andrew, Isupov, Michail N., McNicholas, Stuart, Lowe, Edward, Triviño, Josep, Cowtan, Kevin, Agirre, Jon, Rigden, Daniel J., Uson, Isabel, Lamzin, Victor, Tews, Ivo, Bricogne, Gerard, Leslie, Andrew G. W., Brown, David G.

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Impact of high temperature electron irradiation on characteristics of power SiC Schottky diodes von Lebedev, A.A., Kozlovski, V.V., Levinshtein, M.E., Ivanov, A.E., Davydovskaya, K.S., Yuferev, V.S., Zubov, A.V.

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Relation between Defects on 4H-SiC Epitaxial Surface and Gate Oxide Reliability von Ishiyama, Osamu, Matsuhata, H., Oshima, H., Tanaka, T., Senzaki, J., Sameshima, J., Yamashita, T., Sako, H., Sugiyama, N., Shimozato, Atsushi, Kitabatake, M., Tamura, K.

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Impact of 0.9 MeV electron irradiation on main properties of high voltage vertical power 4H-SiC MOSFETs von Lebedev, A.A., Kozlovski, V.V., Levinshtein, M.E., Ivanov, A.E., Strel'chuk, A.M., Zubov, A.V., Fursin, Leonid

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15 kV, Large Area (1 cm2), 4H-SiC p-Type Gate Turn-Off Thyristors von Cheng, Lin, Capell, Craig, Burk, Albert A., Scozzie, Charles, Lam, Khiem, Agarwal, Anant K., O'Loughlin, Michael J., Zhang, Jon, Ogunniyi, Aderinto, O’Brien, Heather, Richmond, Jim, Palmour, John W.

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CCP 4 Cloud for structure determination and project management in macromolecular crystallograpny von Krissinel, E, Lebedev, AA, Uski, V, Ballard, CB, Keegan, RM, Kovalevskiy, O, Nicholls, RA, Pannu, NS, Skubak, P, Berrisford, J

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Fabrication of a P-Channel SiC-IGBT with High Channel Mobility von Yonezawa, Yoshiyuki, Takenaka, Kensuke, Fukuda, Kenji, Fujisawa, Hiroyuki, Katakami, Shuji, Okamoto, Mitsuo, Takasu, Shinji, Arai, Manabu, Ishimori, Hitoshi

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Crystal structure of human CRMP-4: correction of intensities for lattice-translocation disorder von Ponnusamy, Rajesh, Lebedev, Andrey A., Pahlow, Steffen, Lohkamp, Bernhard

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Improvement of Interface State and Channel Mobility Using 4H-SiC (0-33-8) Face von Wada, Keiji, Masuda, Takeyoshi, Harada, Shin, Hiyoshi, Toru, Namikawa, Yasuo

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Development of SiC Super-Junction (SJ) Device by Deep Trench-Filling Epitaxial Growth von Sakuma, Yuuki, Nagata, Akiyo, Kojima, Kazutoshi, Kosugi, Ryoji, Yatsuo, Tsutomu, Okumura, Hajime, Tanaka, Yasunori, Itoh, Sachiko

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The Nucleation and Propagation of Threading Dislocations with C-Component of Burgers Vector in PVT-Grown 4H-SiC von Mueller, Stephan G., Sanchez, Edward, Wu, Fang Zhen, Sun, Shun, Dudley, Michael, Byrapa, Sha Yan, Chung, Gil Yong, Hansen, Darren M., Loboda, Mark J., Raghothamachar, Balaji, Wang, Huan Huan

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1 MHz Resonant DC/DC-Converter Using 600 V Gallium Nitride (GaN) Power Transistors von Kranzer, Dirk, Wienhausen, Arne Hendrik

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Improved Stability of 4H-SiC MOS Device Properties by Combination of NO and POCl3 Annealing von Araoka, Tsuyoshi, Hatayama, Tomoaki, Yano, Hiroshi, Fuyuki, Takashi

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Superfast Drift Step Recovery Diodes (DSRDs) and Vacuum Field Emission Diodes Based on 4H-SiC von Afanasyev, Alexey V., Ivanov, Boris V., Kuznetsova, Maria A., Kardo-Sysoev, Alexey F., Ilyin, Vladimir A., Luchinin, Victor V.

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Energy Gaps Induced by a Semiconducting Substrate in the Epitaxial Graphene Density of States von Lebedev, Sergey P., Davydov, Sergey Yu, Lebedev, Alexander A.

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Low Resistivity, Thick Heavily Al-Doped 4H-SiC Epilayers Grown by Hot-Wall Chemical Vapor Deposition von Ji, Shi Yang, Ishida, Yuuki, Tsuchida, Hidekazu, Kojima, Kazutoshi, Okumura, Hajime, Yoshida, Sadafumi

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