Evaluation of the concentration of point defects in GaN von Reshchikov, M. A., Usikov, A., Helava, H., Makarov, Yu, Prozheeva, V., Makkonen, I., Tuomisto, F., Leach, J. H., Udwary, K.

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Effect of Si doping on the thermal conductivity of bulk GaN at elevated temperatures – theory and experiment von Paskov, P. P., Slomski, M., Leach, J. H., Muth, J. F., Paskova, T.

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Birefringence and refractive indices of wurtzite GaN in the transparency range von Shokhovets, S., Himmerlich, M., Kirste, L., Leach, J. H., Krischok, S.

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Anisotropic optical constants, birefringence, and dichroism of wurtzite GaN between 0.6 eV and 6 eV von Shokhovets, S., Kirste, L., Leach, J. H., Krischok, S., Himmerlich, M.

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Photoexcited carrier trapping and recombination at Fe centers in GaN von Uždavinys, T. K., Marcinkevičius, S., Leach, J. H., Evans, K. R., Look, D. C.

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Exercise preferences, levels and quality of life in lung cancer survivors von Leach, H. J., Devonish, J. A., Bebb, D. G., Krenz, K. A., Culos-Reed, S. N.

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Effect of strain in sputtered AlN buffer layers on the growth of GaN by molecular beam epitaxy von Kong, W., Jiao, W. Y., Li, J. C., Collar, K., Kim, T. H., Leach, J. H., Brown, A. S.

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Eu-Mg defects and donor-acceptor pairs in GaN: photodissociation and the excitation transfer problem von Singh, A K, O'Donnell, K P, Edwards, P R, Lorenz, K, Leach, J H, Bo kowski, M

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Excitonic recombination dynamics in non-polar GaN/AlGaN quantum wells von Rosales, D., Gil, B., Bretagnon, T., Guizal, B., Zhang, F., Okur, S., Monavarian, M., Izyumskaya, N., Avrutin, V., Özgür, Ü., Morkoç, H., Leach, J. H.

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The effect of AlN interlayer thicknesses on scattering processes in lattice-matched AlInN/GaN two-dimensional electron gas heterostructures von Teke, A, Gökden, S, Tülek, R, Leach, J H, Fan, Q, Xie, J, Özgür, Ü, Morkoç, H, Lisesivdin, S B, Özbay, E

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Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges von Tsao, J. Y., Chowdhury, S., Hollis, M. A., Jena, D., Johnson, N. M., Jones, K. A., Kaplar, R. J., Rajan, S., Van de Walle, C. G., Bellotti, E., Chua, C. L., Collazo, R., Coltrin, M. E., Cooper, J. A., Evans, K. R., Graham, S., Grotjohn, T. A., Heller, E. R., Higashiwaki, M., Islam, M. S., Juodawlkis, P. W., Khan, M. A., Koehler, A. D., Leach, J. H., Mishra, U. K., Nemanich, R. J., Pilawa‐Podgurski, R. C. N., Shealy, J. B., Sitar, Z., Tadjer, M. J., Witulski, A. F., Wraback, M., Simmons, J. A.

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Halide vapor phase epitaxial growth of β-Ga2O3 and α-Ga2O3 films von Leach, J. H., Udwary, K., Rumsey, J., Dodson, G., Splawn, H., Evans, K. R.

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Iron dopant energy levels in β-Ga2O3 von Angeloni, Louis A., Shan, I.-J., Leach, J. H., Schroeder, W. Andreas

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Hot-electron energy relaxation time in AlInN/AlN/GaN 2DEG channels von Matulionis, A, Liberis, J, Šermukšnis, E, Xie, J, Leach, J H, Wu, M, Morkoç, H

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Spectroscopic investigation of coupling among asymmetric InGaN/GaN multiple quantum wells grown on non-polar a-plane GaN substrates von Roberts, A. T., Mohanta, A., Everitt, H. O., Leach, J. H., Van Den Broeck, D., Hosalli, A. M., Paskova, T., Bedair, S. M.

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GaN Power Schottky Diodes with Drift Layers Grown on Four Substrates von Tompkins, R. P., Smith, J. R., Kirchner, K. W., Jones, K. A., Leach, J. H., Udwary, K., Preble, E., Suvarna, P., Leathersich, J.M., Shahedipour-Sandvik, F.

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Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel von Gökden, S, Tülek, R, Teke, A, Leach, J H, Fan, Q, Xie, J, Özgür, Ü, Morkoç, H, Lisesivdin, S B, Özbay, E

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Cardiac health and fitness of Colorado male/female firefighters von Li, K, Lipsey, T, Leach, H J, Nelson, T L

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Plasmon-controlled optimum gate bias for GaN heterostructure field-effect transistors von Šimukovi, A, Matulionis, A, Liberis, J, Šermukšnis, E, Sakalas, P, Zhang, F, Leach, J H, Avrutin, V, Morkoç, H

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Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures von Leach, J. H., Wu, M., Ni, X., Li, X., Özgür, Ü., Morkoç, H.

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