Hydrogen content of amorphous silicon carbide prepared by reactive sputtering: Effects on films properties von Guivarc’h, A., Richard, J., LeContellec, M., Ligeon, E., Fontenille, J.

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The first field effect transistor based on an intrinsic molecular semiconductor von Madru, M., Guillaud, G., Sadoun, M.Al, Maitrot, M., Clarisse, C., Contellec, M.Le, André, J.-J., Simon, J.

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Advanced Ti Salicide Process for Sub-0.2 μm CMOS von Rostoll, M-L., Maury, D., Regolini, J-L., Haond, M., Delpech, P., Gayet, P., LeContellec, M.

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Very simple a-Si:H TFT fabrication process for LCD-TV application von Le Contellec, Michel, Maurice, François, Richard, Joseph, Vinouze, Bruno, Richou, François

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Silicon TFTs for flat panel displays von Morin, F., Le Contellec, M.

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An investigation of metal-insulator-semiconductor structures with Al2O3 insulating layers obtained by electron gun evaporation von Le Contellec, M., Morin, F.

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Study of Quantum Size Effects by Elastoresistance, Thermo-Electric-Power and Conductivity Measurements in Bi and BixSb1-x von Favennec, LeContellec, M, LeTraon, J Y

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0.25 um NMOS transistor with nitride spacer: reduction of the short channel effect by optimisation of the gate reoxidation process and reliablity von Ada-Hanifi, M., Bonis, M., Verove, Ch, Basso, M.T., Revil, N., Haond, M., Lecontellec, M.

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The influence of intercrystalline barriers and dislocations on the electron mobility of InSb thin films von Le Contellec, M, Richard, J, Henaff, J

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Effects of the silicon-to-carbon ratio and the hydrogen content in amorphous SiC thin films prepared by reactive sputtering von Le Contellec, M., Richard, J., Guivarc'h, A., Ligeon, E., Fontenille, J.

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Al/Al2O3/InP MIS structures von Favennec, P. N., Le Contellec, M., L’Haridon, H., Pelous, G. P., Richard, J.

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Nuclear reaction analysis of hydrogen in amorphous silicon and silicon carbide films von Ligeon, E., Guivarc'h, A., Fontenille, J., Le Contellec, M., Danielou, R., Richard, J.

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