High performance raised source/drain InAs/In0.53Ga0.47As channel metal-oxide-semiconductor field-effect-transistors with reduced leakage using a vertical spacer von Lee, Sanghoon, Huang, Cheng-Ying, Cohen-Elias, Doron, Law, Jeremy J. M., Chobpattanna, Varistha, Krämer, Stephan, Thibeault, Brian J., Mitchell, William, Stemmer, Susanne, Gossard, Arthur C., Rodwell, Mark J. W.

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Simulation Study of Thin-Body Ballistic n-MOSFETs Involving Transport in Mixed \Gamma-L Valleys von Mehrotra, Saumitra R., Povolotskyi, Michael, Elias, Doron Cohen, Kubis, Tillmann, Law, Jeremy J. M., Rodwell, Mark J. W., Klimeck, Gerhard

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Two dimensional electron transport in modulation-doped In0.53Ga0.47As/AlAs0.56Sb0.44 ultrathin quantum wells von Huang, Cheng-Ying, Law, Jeremy J. M., Lu, Hong, Jena, Debdeep, Rodwell, Mark J. W., Gossard, Arthur C.

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Reduction of leakage current in In0.53Ga0.47As channel metal-oxide-semiconductor field-effect-transistors using AlAs0.56Sb0.44 confinement layers von Cheng-Ying, Huang, Lee, Sanghoon, Cohen-Elias, Doron, Law Jeremy J M, Carter, Andrew D, Varistha, Chobpattana, Stemmer, Susanne, Rodwell Mark J W

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Nitrogen-passivated dielectric/InGaAs interfaces with sub-nm equivalent oxide thickness and low interface trap densities von Chobpattana, Varistha, Son, Junwoo, Law, Jeremy J. M., Engel-Herbert, Roman, Huang, Cheng-Ying, Stemmer, Susanne

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Formation of InGaAs fins by atomic layer epitaxy on InP sidewalls von Elias, Doron Cohen, Sivananthan, Abirami, Zhang, Chong, Keller, Stacia, Chiang, Han-Wei, Law, Jeremy J. M., Thibeault, Brain J., Mitchell, William J., Lee, Sanghoon, Carter, Andy D., Huang, Cheng-Ying, Chobpattana, Varistha, Stemmer, Susanne, Denbaars, Steve P., Coldren, Larry A., Rodwell, Mark J. W.

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Influence of gate metallization processes on the electrical characteristics of high-k/In0.53Ga0.47As interfaces von Burek, Greg J., Hwang, Yoontae, Carter, Andrew D., Chobpattana, Varistha, Law, Jeremy J. M., Mitchell, William J., Thibeault, Brian, Stemmer, Susanne, Rodwell, Mark J. W.

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Substitutional-Gate MOSFETs With Composite ( \hbox\hbox\hbox/\hbox/\hbox\hbox\hbox) Channels and Self-Aligned MBE Source-Drain Regrowth von Sanghoon Lee, Law, J. J. M., Carter, A. D., Thibeault, B. J., Mitchell, W., Chobpattana, V., Kramer, S., Stemmer, S., Gossard, A. C., Rodwell, M. J. W.

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Al$_{2}$O$_{3}$ Growth on (100) In$_{0.53}$Ga$_{0.47}$As Initiated by Cyclic Trimethylaluminum and Hydrogen Plasma Exposures von Carter, Andrew D., Mitchell, William J., Thibeault, Brian J., Law, Jeremy J. M., Rodwell, Mark J. W.

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Two dimensional electron transport in modulation-doped In{sub 0.53}Ga{sub 0.47}As/AlAs{sub 0.56}Sb{sub 0.44} ultrathin quantum wells von Huang, Cheng-Ying, Law, Jeremy J. M., Rodwell, Mark J. W., Lu, Hong, Gossard, Arthur C., Materials Department, University of California, Santa Barbara, California 93106-5050, Jena, Debdeep

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Reduction of leakage current in In 0.53 Ga 0.47 As channel metal-oxide-semiconductor field-effect-transistors using AlAs 0.56 Sb 0.44 confinement layers von Huang, Cheng-Ying, Lee, Sanghoon, Cohen-Elias, Doron, Law, Jeremy J. M., Carter, Andrew D., Chobpattana, Varistha, Stemmer, Susanne, Gossard, Arthur C., Rodwell, Mark J. W.

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Reduction of leakage current in In{sub 0.53}Ga{sub 0.47}As channel metal-oxide-semiconductor field-effect-transistors using AlAs{sub 0.56}Sb{sub 0.44} confinement layers von Huang, Cheng-Ying, Lee, Sanghoon, Cohen-Elias, Doron, Law, Jeremy J. M., Carter, Andrew D., Rodwell, Mark J. W., Chobpattana, Varistha, Stemmer, Susanne, Gossard, Arthur C., Materials Department, University of California, Santa Barbara, California 93106

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Al2O3 Growth on (100) In0.53Ga0.47As Initiated by Cyclic Trimethylaluminum and Hydrogen Plasma Exposures von Carter, Andrew D, Mitchell, William J, Thibeault, Brian J, Law, Jeremy J. M, Rodwell, Mark J. W

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High transconductance surface channel In0.53Ga0.47As MOSFETs using MBE source-drain regrowth and surface digital etching von Sanghoon Lee, Cheng-Ying Huang, Carter, Andrew D., Law, Jeremy J. M., Elias, Doron C., Chobpattana, Varistha, Thibeault, Brian J., Mitchell, William, Stemmer, Susanne, Gossard, Arthur C., Rodwell, Mark J. W.

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Influence of gate metallization processes on the electrical characteristics of high-k/ In 0.53 Ga 0.47 As interfaces von Burek, Greg J., Hwang, Yoontae, Carter, Andrew D., Chobpattana, Varistha, Law, Jeremy J. M., Mitchell, William J., Thibeault, Brian, Stemmer, Susanne, Rodwell, Mark J. W.

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The draft genome sequence of the ferret (Mustela putorius furo) facilitates study of human respiratory disease von Peng, Xinxia, Alföldi, Jessica, Gori, Kevin, Eisfeld, Amie J, Tyler, Scott R, Tisoncik-Go, Jennifer, Brawand, David, Law, G Lynn, Skunca, Nives, Hatta, Masato, Gasper, David J, Kelly, Sara M, Chang, Jean, Thomas, Matthew J, Johnson, Jeremy, Berlin, Aaron M, Lara, Marcia, Russell, Pamela, Swofford, Ross, Turner-Maier, Jason, Young, Sarah, Hourlier, Thibaut, Aken, Bronwen, Searle, Steve, Sun, Xingshen, Yi, Yaling, Suresh, M, Tumpey, Terrence M, Siepel, Adam, Wisely, Samantha M, Dessimoz, Christophe, Kawaoka, Yoshihiro, Birren, Bruce W, Lindblad-Toh, Kerstin, Di Palma, Federica, Engelhardt, John F, Palermo, Robert E, Katze, Michael G

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Frailty and Early Hospital Readmission After Kidney Transplantation von McAdams‐DeMarco, M. A., Law, A., Salter, M. L., Chow, E., Grams, M., Walston, J., Segev, D. L.

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Prediction of manifest Huntington's disease with clinical and imaging measures: a prospective observational study von Paulsen, Jane S, Dr Prof, Long, Jeffrey D, Prof, Ross, Christopher A, Prof, Harrington, Deborah L, Prof, Erwin, Cheryl J, JD, Williams, Janet K, Prof, Westervelt, Holly James, PhD, Johnson, Hans J, PhD, Aylward, Elizabeth H, PhD, Zhang, Ying, Prof, Bockholt, H Jeremy, BS, Barker, Roger A, Prof

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Modifiable pathways for colorectal cancer: a mendelian randomisation analysis von Cornish, Alex J, Law, Philip J, Timofeeva, Maria, Palin, Kimmo, Farrington, Susan M, Palles, Claire, Jenkins, Mark A, Casey, Graham, Brenner, Hermann, Chang-Claude, Jenny, Hoffmeister, Michael, Kirac, Iva, Maughan, Tim, Brezina, Stefanie, Gsur, Andrea, Cheadle, Jeremy P, Aaltonen, Lauri A, Tomlinson, Ian, Dunlop, Malcolm G, Houlston, Richard S

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Generation and analysis of 3D cell culture models for drug discovery von Belfiore, Lisa, Aghaei, Behnaz, Law, Andrew M.K., Dobrowolski, Jeremy C., Raftery, Lyndon J., Tjandra, Angie D., Yee, Christine, Piloni, Alberto, Volkerling, Alexander, Ferris, Cameron J., Engel, Martin

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