Obtaining Nitric Acid Solutions of Uranyl at Deficiency of NO3– Anions von Sofronov, V. L., Lavrentyev, V. A.

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The production and the properties of the liquid organic hydrogen carrier (LOHC) obtained from the light cycle oil (LCO) von Samoilov, V.O., Sultanova, M.U., Borisov, R.S., Kozhevnikov, A.A., Lavrentyev, V.A., Utepbergenova, A.Sh, Maximov, A.L.

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The Seal of Grand Duke Dimitry Ivanovich Donskoy and Russian Fobia of 14th century von Lavrentyev, Alexander V.

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Automatic speech recognition in presence of music noise on multichannel far-field recordings von Astapov, S.S., Shuranov, E.V., Lavrentyev, A.V., Kabarov, V.I.

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AUTOMATIC SPEECH RECOGNITION IN PRESENCE OF MUSIC NOISE ON MULTICHANNEL FAR-FIELD RECORDINGS von Astapov, S S, Shuranov, E V, Lavrentyev, A V, Kabarov, V I

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Filamentary diamond crystals von Derjaguin, B.V., Fedoseev, D.V., Lukyanovich, V.M., Spitzin, B.V., Ryabov, V.A., Lavrentyev, A.V.

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Enhancement of monolayer SnSe light absorption by strain engineering: A DFT calculation von Vu, Tuan V., Tong, Hien D., Nguyen, Truong Khang, Nguyen, Chuong V., Lavrentyev, A.A., Khyzhun, O.Y., Gabrelian, B.V., Luong, Hai L., Pham, Khang D., Dang, Phuc Toan, Vo, Dat D.

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Mexican-hat dispersions and high carrier mobility of γ-SnX (X = O, S, Se, Te) single-layers: a first-principles investigation von Tuan, Vu V, Lavrentyev, A. A, Khyzhun, O. Y, Binh, Nguyen T. T, Hieu, Nguyen V, Kartamyshev, A. I, Hieu, Nguyen N

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A theoretical and experimental study of the valence-band electronic structure and optical constants of quaternary copper mercury tin sulfide, Cu2HgSnS4, a potential material for op... von Vu, Tuan V., Lavrentyev, A.A., Gabrelian, B.V., Tong, Hien D., Tkach, V.A., Parasyuk, O.V., Khyzhun, O.Y.

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Electronic structure and optical properties of Ag2HgSnSe4: First-principles DFT calculations and X-ray spectroscopy studies von Vu, Tuan V., Lavrentyev, A.A., Gabrelian, B.V., Parasyuk, O.V., Ocheretova, V.A., Khyzhun, O.Y.

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Electronic structure and optical constants of CsPbCl3: The effect of approaches within ab initio calculations in relation to X-ray spectroscopy experiments von Vu, Tuan V., Lavrentyev, A.A., Gabrelian, B.V., Pham, Khang D., Parasyuk, O.V., Denysyuk, N.M., Khyzhun, O.Y.

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First-principles prediction of the electronic properties and contact features of graphene/γ-GeSe van der Waals heterostructure: effects of electric fields and strains von Vu, Tuan V, Kartamyshev, A. I, Lavrentyev, A. A, Hieu, Nguyen N, Phuc, Huynh V, Nguyen, Chuong V

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Highly anisotropic layered crystal AgBiP2Se6: Growth, electronic band-structure and optical properties von Vu, Tuan V., Khyzhun, O.Y., Lavrentyev, A.A., Gabrelian, B.V., Sabov, V.I., Sabov, M.Y., Filep, M.Y., Pogodin, A.I., Barchiy, I.E., Fedorchuk, A.O., Andriyevsky, B., Piasecki, M.

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Environmentally safe layered crystal produced from hazardous chemical elements: TlPb2BrI4, a new promising detector material von Khyzhun, O.Y., Vu, Tuan V., Parasyuk, O.V., Fedorchuk, A.O., Fochuk, P.M., Lavrentyev, A.A., Gabrelian, B.V., Levchuk, Ievgen, Matt, Gebhard J., Tedde, Sandro F., Schmidt, Oliver, Shrestha, Shreetu, Brabec, Christoph J., Kityk, I.V., Piasecki, M.

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Particular features of the electronic structure and optical properties of Ag2PbGeS4 as evidenced from first-principles DFT calculations and XPS studies von Vu, Tuan V., Lavrentyev, A.A., Gabrelian, B.V., Ocheretova, V.A., Parasyuk, O.V., Khyzhun, O.Y.

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TlSbP2Se6 - a new layered single crystal: growth, structure and electronic properties von Vu, Tuan V., Lavrentyev, A.A., Gabrelian, B.V., Sabov, V.I., Sabov, M.Y., Pogodin, A.I., Barchiy, I.E., Fedorchuk, A.O., Balinska, A., Bak, Z., Khyzhun, O.Y., Piasecki, M.

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THE FIRST KING’ S SONS OF KUSH AND THEIR PREDECESSORS von Lavrentyev, Nikolay V.

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Novel Janus GaInX3 (X = S, Se, Te) single-layers: first-principles prediction on structural, electronic, and transport properties von Vu, Tuan V, Hieu, Nguyen N, Lavrentyev, A A, Khyzhun, O Y, Lanh, Chu V, Kartamyshev, A I, Phuc, Huynh V, Hieu, Nguyen V

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Raman activity, piezoelectric response, and carrier mobility in two-dimensional Janus TiGeZ3H (Z= N, P, As) semiconductors: A first-principles prediction von Kartamyshev, A.I., Hieu, Nguyen N., Poklonski, N.A., Hieu, Nguyen V., Vu, Tuan V., Lavrentyev, A.A., Phuc, Huynh V.

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Third harmonic generation in the thin films containing quantum dots and exfoliated nanoparticles von Ganeev, R. A., Kim, V. V., Shuklov, I. A., Popov, V. S., Lavrentyev, N. A., Ponomarenko, V. P., Mardini, A. A., Dyomkin, D. V., Milenkovič, T., Bundulis, A., Grube, J., Sarakovskis, A.

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