An EBIC and SRP study on thermal donors in proton implanted p-type magnetic Czochralski silicon von Faccinelli, Martin, Kirnstoetter, Stefan, Schustereder, Werner, Laven, Johannes G., Hadley, Peter

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Simulation of the proton implantation process in silicon von Faccinelli, Martin, Jelinek, Moriz, Wuebben, Thomas, Laven, Johannes G., Schulze, Hans-Joachim, Hadley, Peter

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Defect engineering for modern power devices von Job, Reinhart, Laven, Johannes G., Niedernostheide, Franz-Josef, Schulze, Hans-Joachim, Schulze, Holger, Schustereder, Werner

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Depletion of superjunction power MOSFETs visualized by electron beam induced current and voltage contrast measurements von Kirnstoetter, Stefan, Faccinelli, Martin, Jelinek, Moriz, Schustereder, Werner, Laven, Johannes G., Schulze, Hans-Joachim, Hadley, Peter

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Metastable Defects in Proton Implanted and Annealed Silicon von Job, Reinhart, Frey, Lothar, Laven, Johannes G., Ganagona, Naveen, Schustereder, Werner, Rommel, Mathias, Jelinek, Moriz, Schulze, Hans Joachim

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The Efficiency of Hydrogen-Doping as a Function of Implantation Temperature von Laven, Johannes G., Ganagona, Naveen, Schustereder, Werner, Rommel, Mathias, Jelinek, Moriz, Schulze, Hans Joachim, Frey, Lothar

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High dose proton implantations into silicon: a combined EBIC, SRP and TEM study von Kirnstoetter, Stefan, Faccinelli, Martin, Gspan, Christian, Grogger, Werner, Jelinek, Moriz, Schustereder, Werner, Laven, Johannes G., Schulze, Hans-Joachim, Hadley, Peter

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Protonendotierung von Silizium: Untersuchung und Modellierung protoneninduzierter Dotierungsprofile in Silizium von Laven, Johannes G

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Protonendotierung Von Silizium: Untersuchung und Modellierung Protoneninduzierter Dotierungsprofile in Silizium von Laven, Johannes G

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Deep-Level Defects in High-Dose Proton Implanted and High-Temperature Annealed Silicon von Jelinek, Moriz, Laven, Johannes, Rommel, Mathias, Schustereder, Werner, Schulze, Hans-Joachim, Frey, Lothar, Job, Reinhart

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A New Method to Increase the Doping Efficiency of Proton Implantation in a High-Dose Regime von Jelinek, Moriz, Laven, Johannes, Job, Reinhart, Schustereder, Werner, Schulze, Hans-Joachim, Rommel, Mathias, Frey, Lothar

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Multiple Proton Implantations into Silicon: A Combined EBIC and SRP Study von Faccinelli, Martin, Hadley, Peter, Kirnstötter, Stefan, Laven, Johannes G., Schulze, Hans Joachim, Schustereder, Werner, Jelinek, Moriz

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Investigation of Doping Type Conversion and Diffusion Length Extraction of Proton Implanted Silicon by EBIC von Kirnstötter, Stefan, Faccinelli, Martin, Hadley, Peter, Job, Reinhart, Schustereder, Werner, Laven, Johannes G., Schulze, Hans-Joachim

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Semiconductor device with an IGBT region and a non-switchable diode region von Laven, Johannes Georg

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(Invited) The Thermal Budget of Hydrogen-Related Donor Profiles: Diffusion-Limited Activation and Thermal Dissociation von Laven, Johannes G., Job, Reinhart, Schulze, Hans-Joachim, Niedernostheide, Franz-Josef, Schustereder, Werner, Frey, Lothar

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Semiconductor Device with an IGBT Region and a Non-Switchable Diode Region von Laven, Johannes Georg

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Method of operating a semiconductor device having a desaturation channel structure von Laven, Johannes, Schulze, Hans-Joachim

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Conversion Efficiency of Radiation Damage Profiles into Hydrogen-Related Donor Profiles von Laven, Johannes G., Niedernostheide, Franz Josef, Schulze, Hans Joachim, Frey, Lothar, Schulze, Holger, Job, Reinhard, Schustereder, Werner

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The Impact of Helium Co-Implantation on Hydrogen Induced Donor Profiles in Float Zone Silicon von Laven, Johannes, Job, Reinhart, Schulze, Hans-Joachim, Niedernostheide, Franz-Josef, Häublein, Volker, Schulze, Holger, Schustereder, Werner, Ryssel, Heiner, Frey, Lothar

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Durchführung und Charakterisierungsmethoden von Laven, Johannes G

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