Spontaneous coherence buildup in a polariton laser von LAUSSY, Fabrice P, MALPUECH, G, KAVOKIN, A, BIGENWALD, P

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Polariton laser and polariton superfluidity in microcavities von Kavokin, Alexey, Malpuech, Guillaume, Laussy, Fabrice P.

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High-power GaN-based semiconductor lasers von Ikeda, M., Mizuno, T., Takeya, M., Goto, S., Ikeda, S., Fujimoto, T., Ohfuji, Y., Hashizu, T.

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Polariton laser: thermodynamics and quantum kinetic theory von Malpuech, G, Rubo, Y G, Laussy, F P, Bigenwald, P, Kavokin, A V

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Dynamical theory of polariton amplifiers von Rubo, Yuri G, Laussy, F P, Malpuech, G, Kavokin, A, Bigenwald, P

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The value of the direct bandgap of InN: a re-examination von Briot, O., Maleyre, B., Clur-Ruffenach, S., Gil, B., Pinquier, C., Demangeot, F., Frandon, J.

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Spontaneous coherence buildup in a polariton laser von Laussy, Fabrice P., Malpuech, G., Kavokin, A.

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To the developement of the transfer matrix formalism von Shelykh, I. A., Ivanov, V. K.

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Recent development of InN RF-MBE growth and its structural and property characterization von Nanishi, Yasushi, Saito, Yoshiki, Yamaguchi, Tomohiro, Araki, Tsutomu, Miyajima, Takao, Naoi, Hiroyuki

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Multiplets in the optical emission spectra of large quantum dots in microcavities von Laussy, Fabrice P., Kavokin, Alexey, Malpuech, Guillaume

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Theory of excitonic Mott transition in double quantum wells von Nikolaev, V. V., Portnoi, M. E.

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Electronic and optical properties of [N11] grown nanostructures von Povolotskyi, Michael, Di Carlo, Aldo, Birner, Stefan

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Coherence dynamics in microcavities and polariton lasers von Laussy, F P, Malpuech, G, Kavokin, A V, Bigenwald, P

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Topical questions in the photophysics of J aggregates von Embriaco, D., Balagurov, D. B., La Rocca, G. C., Agranovich, V. M.

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THz fractal antennas for electrical and optical semiconductor emitters and receptors von Gaubert, Cédric, Chusseau, Laurent, Giani, Alain, Gasquet, Daniel, Garet, Frédéric, Aquistapace, Fabien, Duvillaret, Lionel, Coutaz, Jean-Louis, Knap, Wojciech

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Yellow‐green emitters based on beryllium‐chalcogenides on InP substrates von Kishino, Katsumi, Nomura, Ichirou

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II-VI/III-V structures with a heterovalent interface in the active region: New opportunities in band engineering von Ivanov, S. V., Kaygorodov, V. A., Sorokin, S. V., Solov'ev, V. A., Sitnikova, A. A., Lyublinskaya, O. G., Terent'ev, Ya. V., Vasilyev, Yu. B., Berkovits, V. L., Toropov, A. A., Kop'ev, P. S.

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Stimulated emission due to light localization in the bandgap of disordered opals von Romanov, S. G., Kaliteevski, M. A., Sotomayor Torres, C. M., Manzanares Martinez, J., Cassagne, D., Albert, J. P., Kavokin, A. V., Laussy, F., Nikolaev, V. V., Brand, S., Abram, R. A., Gaponik, N., Eychmueller, A., Rogach, A. L.

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Group III-nitride distributed Bragg reflectors and resonant cavities grown on bulk GaN crystals by metalorganic vapour phase epitaxy von Schenk, H. P. D., Czernecki, R., Krowicki, K., Targowski, G., Grzanka, S., Krysko, M., Prystawko, P., Wisniewski, P., Leszczynski, M., Teisseyre, H., Franssen, G., Muszalski, J., Suski, T., Perlin, P.

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Strain-induced correlations between the phonon frequencies of indium nitride von Briot, O., Gil, B., Maleyre, B., Ruffenach, S., Pinquier, C., Demangeot, F., Frandon, J.

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