Explanation of low-frequency relative intensity noise in semiconductor lasers von SU, C. B, SCHLAFER, J, LAUER, R. B

Volltext

Simultaneous measurement of spontaneous emission rate, nonlinear gain coefficient, and carrier lifetime in semiconductor lasers using a parasitic-free optical modulation technique von EOM, J, SU, C. B, LACOURSE, J, LAUER, R. B

Volltext

Anomalously high damping in strained InGaAs-GaAs single quantum well lasers von Sharfin, W.F., Schlafer, J., Rideout, W., Elman, B., Lauer, R.B., LaCourse, J., Crawford, F.D.

Volltext

Frequency response of an InGaAsP vapor phase regrown buried heterostructure laser with 18 GHz bandwidth von OLSHANSKY, R, LANZISERA, V, SU, C. B, POWAZINIK, W, LAUER, R. B

Volltext

Analysis of relative intensity noise in semiconductor lasers and its effect on subcarrier multiplexed lightwave systems von Xiaolin Lu, Su, C.B., Lauer, R.B., Meslener, G.J., Ulbricht, L.W.

Volltext

Microwave packaging of optoelectronic components von Schlafer, J., Lauer, R.B.

Volltext

The relation of doping level to K factor and the effect on ultimate modulation performance of semiconductor lasers von Eom, J., Su, C.B., LaCourse, J.S., Lauer, R.B.

Volltext

Determination of the gain nonlinearity time constant in 1.3 μm semiconductor lasers von EOM, J, SU, C. B, RIDEOUT, W, LAUER, R. B, LACOURSE, J. S

Volltext

Effective differential gain and modulation bandwidth reduction in quantum well lasers due to confinement factor modulation von Shin, S., Lee, C.W., Su, C.B., LaCourse, J., Rideout, W., Lauer, R.B.

Volltext

Transport processes of photoinduced carriers in Bi12SiO20 von Hou, S. L., Lauer, R. B., Aldrich, R. E.

Volltext

Thermally Stimulated Currents and Luminescence in Bi12SiO20 and Bi12GeO20 von Lauer, R. B.

Volltext

PHOTOLUMINESCENCE IN Bi12SiO20 AND Bi12GeO20 von Lauer, R. B.

Volltext

12.5-GHz direct modulation bandwidth of vapor phase regrown 1.3-μm InGaAsP buried heterostructure lasers von SU, C. B, LANZISERA, V, POWAZINIK, W, MELAND, E, OLSHANKY, R, LAUER, R. B

Volltext

Response time of Ge-doped (Al,Ga)As-GaAs double-heterostructure LED’s von Zucker, J., Lauer, R. B., Schlafer, J.

Volltext

Increase in laser RIN due to asymmetric nonlinear gain, fiber dispersion, and modulation von Lu, X.L., Su, C.B., Lauer, R.B.

Volltext

Excitation mechanism of the Cr3+ luminescence center in SrTiO3 von Ghosh, Amal K., Addiss, R. R., Lauer, R. B.

Volltext

The I.R. photoluminescence emission band in ZnO von Lauer, R.B.

Volltext

Subscriber loop transmission using low operating current light emitting diodes subjected to temperature extremes von Ulbricht, L., Teare, M., Fye, D., Lauer, R.

Volltext

On the nature of the external surface of cultured human embryo fibroblasts: an ultrastructural and cytochemical analysis utilising stain and lectin probes von Kelley, R O, Lauer, R B

Volltext

Optimization and characterization of high-radiance (Al,Ga)As double-heterostructure LED's for optical communication systems von Zucker, J., Lauer, R.B.

Volltext