Investigation of radiation-induced defects in the electron irradiated power transistor structures von Korshunov, F.P., Bogatyrev, Yu.V., Lastovsky, S.B., Kulgachev, V.I., Anufriev, L.P., Rubtsevich, I.I., Golubev, N.F.

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INFLUENCE OF GAMMA RADIATION ON MOS/SOI TRANSISTORS von Yu. V. Bogatyrev, S. B. Lastovsky, S. A. Soroka, S. V. Shwedov, D. A. Ogorodnikov

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Influence of GAMMA-irradiation on elements of submicron cmos integrated circuits von Korshunov, F P, Bogatyrev, Y V, Belous, A I, Shwedov, S V, Malyshev, V S, Lastovsky, S B, Karas, V I, Kulgachev, V I

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Influence of electron irradiation on characteristics of Si1−xGex p–n-structures von Korshunov, F.P., Markevich, V.P., Murin, L.I., Lastovsky, S.B., Bogatyrev, Yu.V., Abrosimov, N.V.

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Influence of ionizing radiation on electric characteristics of power n-MOSFETS von Korshunov, F. P., Bogatyrev, Y. V., Belous, A. I., Shwedov, S. V., Soroka, S. A., Lastovsky, S. B., Karas, V. I., Kulgachev, V. I.

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Prediction of radiation resistance of CMOS integrated microcircuits von Korshunov, F. P., Bogatyrev, Yu. V., Belous, A. I., Shwedov, S. V., Lastovsky, S. B., Karas, V. I., Kulgachev, V. I.

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Radiation effects in bipolar and CMOS integrated microcircuits von Korshunov, F.P., Bogatyrev, Yu.V., Belous, A.I., Shwedov, S.V., Lastovsky, S.B., Kulgachev, V.I., Gurinovich, V.A.

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Maintenance of Serviceability of Various Perspective Semiconductor Devices at Radiation Influence von Korshunov, F.P., Bogatyrev, Yu.V., Belous, A.I., Shwedov, S.V., Golubev, N.F., Lastovsky, S.B., Kulgachev, V.I.

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SE352668 von BIKHMAN B,SU, MARGULOVA T,SU, DIK V,SU, LASTOVSKY R,SU, SOLOVIEV S,SU, RASSOKHIN N,SU, SHAKUN N,SU, TEVLIN S,SU, DYATLOVA N,SU, FRAISHTAT D,SU, RYABOVA L,SU, MONAKHOV A,SU, BOGATYREVA S,SU, VLASOVA E,SU

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