ZnO nanowire growth and devices von Heo, Y.W., Norton, D.P., Tien, L.C., Kwon, Y., Kang, B.S., Ren, F., Pearton, S.J., LaRoche, J.R.

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Monolithic integration of InP-based transistors on Si substrates using MBE von Liu, W.K., Lubyshev, D., Fastenau, J.M., Wu, Y., Bulsara, M.T., Fitzgerald, E.A., Urteaga, M., Ha, W., Bergman, J., Brar, B., Hoke, W.E., LaRoche, J.R., Herrick, K.J., Kazior, T.E., Clark, D., Smith, D., Thompson, R.F., Drazek, C., Daval, N.

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Improved Pt∕Au and W∕Pt∕Au Schottky contacts on n-type ZnO using ozone cleaning von Ip, K., Gila, B. P., Onstine, A. H., Lambers, E. S., Heo, Y. W., Baik, K. H., Norton, D. P., Pearton, S. J., Kim, S., LaRoche, J. R, Ren, F.

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Monolithic integration of silicon CMOS and GaN transistors in a current mirror circuit von Hoke, W. E., Chelakara, R. V., Bettencourt, J. P., Kazior, T. E., LaRoche, J. R., Kennedy, T. D., Mosca, J. J., Torabi, A., Kerr, A. J., Lee, H.-S., Palacios, T.

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Effect of ozone cleaning on Pt/Au and W/Pt/Au Schottky contacts to n-type ZnO von Ip, K, Gila, B.P, Onstine, A.H, Lambers, E.S, Heo, Y.W, Baik, K.H, Norton, D.P, Pearton, S.J, Kim, S, LaRoche, J.R, Ren, F

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AlGaN/GaN high electron mobility transistors on 100 mm silicon substrates by plasma molecular beam epitaxy von Hoke, W. E., Kennedy, T. D., Mosca, J. J., Kerr, A. J., Torabi, A., Davis-Hearns, S., LaRoche, J. R.

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Temperature-dependent characteristics of Pt Schottky contacts on n-type ZnO von Ip, K., Heo, Y. W., Baik, K. H., Norton, D. P., Pearton, S. J., Kim, S., LaRoche, J. R., Ren, F.

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Large-scale statistical analysis of secondary xylem ESTs in pine von Pavy, Nathalie, Laroche, Jérôme, Bousquet, Jean, Mackay, John

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Design of edge termination for GaN power Schottky diodes von Laroche, J. R., Ren, F., Baik, K. W., Pearton, S. J., Shelton, B. S., Peres, B.

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Current–voltage and reverse recovery characteristics of bulk GaN p-i-n rectifiers von Irokawa, Y., Luo, B., Kim, Jihyun, LaRoche, J. R., Ren, F., Baik, K. H., Pearton, S. J., Pan, C.-C., Chen, G.-T., Chyi, J.-I., Park, S. S., Park, Y. J.

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Annealing temperature dependence of contact resistance and stablity for Ti/Al/Pt/Au ohmic contacts to bulk n-ZnO von Ip, K., Baik, K. H., Heo, Y. W., Norton, D. P., Pearton, S. J., LaRoche, J. R., Luo, B., Ren, F., Zavada, J. M.

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Fabrication approaches to ZnO nanowire devices von LaRoche, J. R., Heo, Y. W., Kang, B. S., Tien, L. C., Kwon, Y., Norton, D. P., Gila, B. P., Ren, F., Pearton, S. J.

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InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor von Chang, P. C., Baca, A. G., Li, N. Y., Sharps, P. R., Hou, H. Q., Laroche, J. R., Ren, F.

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160-A bulk GaN Schottky diode array von Baik, K. H., Irokawa, Y., Kim, Jihyun, LaRoche, J. R., Ren, F., Park, S. S., Park, Y. J., Pearton, S. J.

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High Performance Mixed Signal Circuits Enabled by the Direct Monolithic Heterogeneous Integration of InP HBT and Si CMOS on a Silicon Substrate von Kazior, T E, LaRoche, J R, Urteaga, M, Bergman, J, Choe, M J, Lee, K J, Seong, T, Seo, M, Yen, A, Lubyshev, D, Fastenau, J M, Liu, W K, Smith, D, Clark, D, Thompson, R, Bulsara, M T, Fitzgerald, E A, Drazek, C, Guiot, E

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Pt ∕ ZnO nanowire Schottky diodes von Heo, Y. W., Tien, L. C., Norton, D. P., Pearton, S. J., Kang, B. S., Ren, F., LaRoche, J. R.

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The embryonic expression patterns of zebrafish genes encoding LysM-domains von Laroche, F.J.F., Tulotta, C., Lamers, G.E.M., Meijer, A.H., Yang, P., Verbeek, F.J., Blaise, M., Stougaard, J., Spaink, H.P.

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Device characteristics of the GaAs/InGaAsN/GaAs p-n-p double heterojunction bipolar transistor von Chang, P.C., Li, N.Y., Baca, A.G., Hou, H.Q., Monier, C., Laroche, J.R., Ren, F., Pearton, S.J.

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More Than Moore: GaN HEMTs and Si CMOS Get It Together von Kazior, T. E., LaRoche, J. R., Hoke, W. E.

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Implanted p– n junctions in GaN von Cao, X.A, LaRoche, J.R, Ren, F, Pearton, S.J, Lothian, J.R, Singh, R.K, Wilson, R.G, Guo, H.J, Pennycook, S.J

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