Nanoelectronics: Transistors arrive at the atomic limit von Lansbergen, Gabriel P

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Reconfigurable Logic Devices on a Single Dopant Atom-Operation up to a Full Adder by Using Electrical Spectroscopy von Klein, Michael, Lansbergen, Gabriel P., Mol, Jan A., Rogge, Sven, Levine, Raphael D., Remacle, Francoise

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Transistors arrive at the atomic limit von Lansbergen, Gabriel P.

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Thermionic Emission as a Tool to Study Transport in Undoped nFinFETs von Tettamanzi, G.C., Paul, A., Lansbergen, G.P., Verduijn, J., Sunhee Lee, Collaert, N., Biesemans, S., Klimeck, G., Rogge, S.

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Manipulation of Single Charges Using Dopant Atoms in Silicon—Interplay with Intervalley Phonon Emission von Ono, Yukinori, Hori, Masahiro, Lansbergen, Gabriel P., Fujiwara, Akira

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Silicon single-electron transfer devices: Ultimate control of electric charge von Fujiwara, Akira, Yamahata, G., Nishiguchi, K., Lansbergen, G. P., Ono, Y.

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Transport-based dopant metrology in advanced FinFETs von Lansbergen, G.P., Rahman, R., Wellard, C.J., Caro, J., Collaert, N., Biesemans, S., Klimeck, G., Hollenberg, L.C.L., Rogge, S.

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Thermionic Emission as a tool to study transport in undoped nFinFETs von Tettamanzi, Giuseppe C, Abhijeet, Paul, Lansbergen, Gabriel P, Verduijn, Jan, Lee, Sunhee, Collaert, Nadine, Biesemans, Serge, Klimeck, Gerhard, Rogge, Sven

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