Donor-Based Single Electron Pumps with Tunable Donor Binding Energy von Lansbergen, G. P, Ono, Y, Fujiwara, A

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Transport spectroscopy of a single dopant in a gated silicon nanowire von Sellier, H, Lansbergen, G P, Caro, J, Rogge, S, Collaert, N, Ferain, I, Jurczak, M, Biesemans, S

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Tunable Kondo Effect in a Single Donor Atom von Lansbergen, G. P, Tettamanzi, G. C, Verduijn, J, Collaert, N, Biesemans, S, Blaauboer, M, Rogge, S

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Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET von Lansbergen, G. P., Rahman, R., Wellard, C. J., Woo, I., Caro, J., Collaert, N., Biesemans, S., Klimeck, G., Hollenberg, L. C. L., Rogge, S.

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Magnetic-field probing of an SU(4) Kondo resonance in a single-atom transistor von Tettamanzi, G C, Verduijn, J, Lansbergen, G P, Blaauboer, M, Calderón, M J, Aguado, R, Rogge, S

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Orbital Stark effect and quantum confinement transition of donors in silicon von Rahman, Rajib, Lansbergen, G. P., Park, Seung H., Verduijn, J., Klimeck, Gerhard, Rogge, S., Hollenberg, Lloyd C. L.

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Gate-induced quantum-confinement transition of a single dopant atom in a silicon FinFET von Lansbergen, G. P., Rahman, R., Wellard, C. J., Woo, I., Caro, J., Collaert, N., Biesemans, S., Klimeck, G., Hollenberg, L. C. L., Rogge, S.

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Lifetime-enhanced transport in silicon due to spin and valley blockade von Lansbergen, G P, Rahman, R, Verduijn, J, Tettamanzi, G C, Collaert, N, Biesemans, S, Klimeck, G, Hollenberg, L C L, Rogge, S

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Ternary logic implemented on a single dopant atom field effect silicon transistor von Klein, M., Mol, J. A., Verduijn, J., Lansbergen, G. P., Rogge, S., Levine, R. D., Remacle, F.

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Subthreshold channels at the edges of nanoscale triple-gate silicon transistors von Sellier, H., Lansbergen, G. P., Caro, J., Rogge, S., Collaert, N., Ferain, I., Jurczak, M., Biesemans, S.

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Carrier transport in indium-doped p-channel silicon-on-insulator transistors between 30 and 285 K von Khalafalla, M. A. H., Ono, Y., Noborisaka, J., Lansbergen, G. P., Fujiwara, A.

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Sub-threshold study of undoped trigate nFinFET von Tettamanzi, G.C., Lansbergen, G.P., Paul, A., Lee, S., Deosarran, P.A., Collaert, N., Klimeck, G., Biesemans, S., Rogge, S.

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Electric field reduced charging energies and two-electron bound excited states of single donors in silicon von Rahman, R., Lansbergen, G. P., Verduijn, J., Tettamanzi, G. C., Park, S. H., Collaert, N., Biesemans, S., Klimeck, G., Hollenberg, L. C. L., Rogge, S.

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Coherent transport through a double donor system in silicon von Verduijn, J., Tettamanzi, G. C., Lansbergen, G. P., Collaert, N., Biesemans, S., Rogge, S.

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Reconfigurable Logic Devices on a Single Dopant Atom-Operation up to a Full Adder by Using Electrical Spectroscopy von Klein, Michael, Lansbergen, Gabriel P., Mol, Jan A., Rogge, Sven, Levine, Raphael D., Remacle, Francoise

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Erratum: Lifetime-Enhanced Transport in Silicon due to Spin and Valley Blockade [Phys. Rev. Lett. 107 , 136602 (2011)] von Lansbergen, G. P., Rahman, R., Verduijn, J., Tettamanzi, G. C., Collaert, N., Biesemans, S., Klimeck, G., Hollenberg, L. C. L., Rogge, S.

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Ternary logic implemented on a single dopant atom field effectsilicon transistor von Klein, M., Mol, J. A., Verduijn, J., Lansbergen, G. P., Rogge, S., Levine, R. D., Remacle, F.

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Magnetic Field Probing of an SU(4) Kondo Resonance in a Single Atom Transistor von Tettamanzi, G C, Verduijn, J, Lansbergen, G P, Blaauboer, M, Calderón, M J, Aguado, R, Rogge, S

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Subthreshold channels at the edges of nanoscale triple-gatesilicon transistors von Sellier, H., Lansbergen, G. P., Caro, J., Rogge, S., Collaert, N., Ferain, I., Jurczak, M., Biesemans, S.

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Engineered valley-orbit splittings in quantum-confined nanostructures in silicon von Rahman, R., Verduijn, J., Kharche, N., Lansbergen, G. P., Klimeck, G., Hollenberg, L. C. L., Rogge, S.

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