Hall Scattering Factor and Electron Mobility of 4H SiC: Measurements and Numerical Simulation von Wischmeyer, Frank, Rutsch, G., Langer, D.W., Rowland, L.B., Devaty, Robert P., Choyke, Wolfgang J., Niemann, E.

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Backgating characteristics of MODFET structures von Ezis, A., Langer, D.W.

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Multiple twisted dataline techniques for multigigabit DRAMs von Dong-Sun Min, Langer, D.W.

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Measurement of the Hall Scattering Factor in 4H SiC Epilayers from 40K to 290K and up to Magnetic Fields of Nine Tesla von Devaty, Robert P., Choyke, Wolfgang J., Rutsch, G., Langer, D.W., Rowland, L.B.

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Luminescence and guided-optics in Er-doped glass and GaAs films von Kim, H.K., Li, C.C., Li, Y., Langer, D.W., Migliuolo, M.

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Computing the eigenmodes of lossy field-induced optical waveguides von Coalson, R.D., Pant, D.K., Ali, A., Langer, D.W.

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Quantum well vertical light modulator von Chmielowski, M., Langer, D.W.

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Effect of multiple-modes on the switching efficiency of waveguide couplers von Chen, M., Langer, D.W., Park, S.H.

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Measurement of electro-refraction in GaAs/AlGaAs multiple quantum well waveguide structures von ur-Rahman, H., Langer, D.W.

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Modification of surface characteristics in GaAs with dry processing von Chung, Y., Langer, D.W., Becker, R., Look, D.

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The pressure shift of the Cr levels in Al2O3 von Langer, D.W., Euwema, R.N.

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Pressure shift of the Cr levels in Al 2O 3 von Langer, D.W., Euwema, R.N.

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The pressure shift of the Cr levels in Al 2O 3 von Langer, D.W., Euwema, R.N.

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Effects of Excitation Intensity on Photoluminescence of Pure CdTe von Kim, Q., Langer, D. W.

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The dependence of AlGaAs/GaAs MODFET isolation on material and device structure von Ezis, A., Langer, D.W., Tu, C.W.

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Multiple twisted data line techniques for coupling noise reduction in embedded DRAMs von Dong-Sun Min, Langer, D.W.

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Surface states at the GaAs-germanium nitride interface von Chung, Y, Langer, D.W, Singh, H.P, Woollam, J.A

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Intensity-reversal in the donor bound exciton luminescence of GaAs von Reynolds, D.C., Langer, D.W., Litton, C.W., McCoy, G.L., Bajaj, K.K.

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Valence band density of states of amorphous and trigonal selenium determined by X-ray and U.V. photoemission von Shevchick, N.J., Tejeda, J., Cardona, M., Langer, D.W.

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Improvements to the stability of electric field sensors von Dong-Oh Lee, Boston, J.R., Langer, D.W., Falk, J.

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