Experimental characterization of steel fibre knitted fabrics deformability von Vanclooster, K., Barburski, M., Lomov, S. V., Verpoest, I., Deridder, F., Lanckmans, F.

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Use of a capacitance voltage technique to study copper drift diffusion in (porous) inorganic low-k materials von Lanckmans, F, Maex, K

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The role of H in the Cu+ drift diffusion in plasma-deposited a-SiC:H von Lanckmans, F, Brijs, B, Maex, K

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Diffusion barrier integrity and electrical performance of Cu/porous dielectric damascene lines von Iacopi, F., Tokei, Zs, Stucchi, M., Lanckmans, F., Maex, K.

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A comparative study of copper drift diffusion in plasma deposited a-SiC:H and silicon nitride von Lanckmans, F., Gray, W.D., Brijs, B., Maex, K.

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Process Optimization and Integration of Trimethylsilane-Deposited α-SiC:H and α-SiCO:H Dielectric Thin Films for Damascene Processing von Gray, W. D., Loboda, M. J., Bremmer, J. N., Struyf, H., Lepage, M., Van Hove, M., Donaton, R. A., Sleeckx, E., Stucchi, M., Lanckmans, F., Gao, T., Boullart, W., Coenegrachts, B., Maenhoudt, M., Vanhaelemeersch, S., Meynen, H., Maex, K.

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A quantitative adhesion study between contacting materials in Cu damascene structures von Lanckmans, F, Brongersma, S.H, Varga, I, Poortmans, S, Bender, H, Conard, T, Maex, K

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Experimental characterization of steel fibre knitted fabrics deformability von Vanclooster, Kristof, Barburski, Marcin, Lomov, Stepan Vladimirovitch, Verpoest, Ignace, Deridder, F, Lanckmans, F

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Use of a capacitance voltage technique to study copper drift diffusion in (porous) inorganic low-k materials von LANCKMANS, F, MAEX, K

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Post Dry-Etch Cleaning Issues of an Organic Low-K Dielectric von Alaerts, C., Vanhaelemeersch, Serge, Lanckmans, F., Maex, Karen, Baklanov, Mikhail R.

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The role of H in the Cu exp + drift diffusion in plasma-deposited a-SiC:H von Lanckmans, F, Brijs, B, Maex, K

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Porous Interfaces as Crack Deflecting Interlayers in Ceramic Laminates von Clegg, W.J., Davis, J.B., Lanckmans, F., Blanks, K.S.

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Process optimization and integration of trimethylsilane-deposited a-SiC:H and a-SiCO:H Dielectric Thin Films for Damascene Processing von Gray, W D, Loboda, M J, Bremmer, J N, Struyf, H, Lepage, M, Van Hove, M, Donaton, R A, Sleeckx, E, Stucchi, M, Lanckmans, F, Gao, T, Boullart, W, Coenegrachts, B, Maenhoudt, M, Vanhaelemeersch, S, Meynen, H, Maex, K

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Reliability of copper dual damascene influenced by pre-clean von Tokei, Zs, Lanckmans, F., Van den bosch, G., Van Hove, M., Maex, K., Bender, H., Hens, S., Van Landuyt, J.

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