High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes von Osvald, J., Lalinský, T., Vanko, G.

Volltext

LSMO thin films with high metal-insulator transition temperature on buffered SOI substrates for uncooled microbolometers von CHROMIK, Š, STRBIK, V, CHOLEVA, P, DOBROCKA, E, ROCH, T, ROSOVA, A, SPANKOVA, M, LALINSKY, T, VANKO, G, LOBOTKA, P, RALBOVSKY, M

Volltext

Some peculiarities at preparation of Bi4Ti3O12 films for bolometric applications von Chromik, Š., Španková, M., Talacko, M., Dobročka, E., Lalinský, T.

Volltext

Stability of AlGaN/GaN heterostructures after hydrogen plasma treatment von Babchenko, O., Dzuba, J., Lalinský, T., Vojs, M., Vincze, A., Ižák, T., Vanko, G.

Volltext

Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor von Le Boulbar, E.D., Edwards, M.J., Vittoz, S., Vanko, G., Brinkfeldt, K., Rufer, L., Johander, P., Lalinský, T., Bowen, C.R., Allsopp, D.W.E.

Volltext

AlGaN/GaN high electron mobility transistors with nickel oxide based gates formed by high temperature oxidation von Lalinský, T., Vanko, G., Vallo, M., Dobročka, E., Rýger, I., Vincze, A.

Volltext

Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation von Lalinský, T., Vallo, M., Vanko, G., Dobročka, E., Vincze, A., Osvald, J., Rýger, I., Dzuba, J.

Volltext

Micromachined membrane structures for pressure sensors based on AlGaN/GaN circular HEMT sensing device von Lalinský, T., Hudek, P., Vanko, G., Dzuba, J., Kutiš, V., Srnánek, R., Choleva, P., Vallo, M., Držík, M., Matay, L., Kostič, I.

Volltext

Thermo-mechanical analysis of uncooled La0.67Sr0.33MnO3 microbolometer made on circular SOI membrane von Lalinský, T., Dzuba, J., Vanko, G., Kutiš, V., Paulech, J., Gálik, G., Držík, M., Chromik, Š., Lobotka, P.

Volltext

Piezoelectric response of AlGaN/GaN-based circular-HEMT structures von Lalinský, T., Držík, M., Vanko, G., Vallo, M., Kutiš, V., Bruncko, J., Haščík, Š., Jakovenko, J., Husák, M.

Volltext

Laser ablated ZnO layers for ALGaN/GaN HEMT passivation von Vanko, G., Vallo, M., Bruncko, J., Lalinský, T.

Volltext

Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor von Lalinský, T., Vanko, G., Vallo, M., Držík, M., Bruncko, J., Jakovenko, J., Kutiš, V., Rýger, I., Haščík, Š., Husák, M.

Volltext

C-V analysis of rapidly thermal annealed SF6 plasma treated AlGaN/GaN heterostructures von OSVALD, J, LALINSKY, T, VANKO, G, HASCIK, S, VINCZE, A

Volltext

C-V characterization of SF6 plasma treated AlGaN/GaN heterostructures von OSVAID, J, LALINSKY, T, VANKO, G, HASCIK, S, VINCZE, A

Volltext

AlGaN/GaN diaphragm-based pressure sensor with direct high performance piezoelectric transduction mechanism von Dzuba, J., Vanko, G., Držík, M., Rýger, I., Kutiš, V., Zehetner, J., Lalinský, T.

Volltext

AlGaN/GaN heterostructure-based surface acoustic wave-structures for chemical sensors von Lalinský, T., Rufer, L., Vanko, G., Mir, S., Haščík, Š., Mozolová, Ž., Vincze, A., Uherek, F.

Volltext

Preparation and structural properties of YBCO films grown on GaN/ c-sapphire hexagonal substrate von Chromik, Š., Gierlowski, P., Španková, M., Dobročka, E., Vávra, I., Štrbík, V., Lalinský, T., Sojková, M., Liday, J., Vogrinčič, P., Espinos, J.P.

Volltext

Effect of fluorine interface redistribution on performance of AlGaN/GaN HEMTs von Lalinský, T., Vanko, G., Vincze, A., Haščík, Š., Osvald, J., Donoval, D., Tomáška, M., Kostič, I.

Volltext

The GaN/SiC Heterostructure-based Hydrogen SAW Sensor Operating in GHz Range von Rýger, I., Vanko, G., Lalinský, T., Haščík, Š., Nemec, P., Benčúrová, A., Tomáška, M.

Volltext

Stress investigation of the AlGaN/GaN micromachined circular diaphragms of a pressure sensor von Dzuba, J, Vanko, G, Dr ík, M, Rýger, I, Vallo, M, Kutiš, V, Haško, D, Choleva, P, Lalinský, T

Volltext