AlGaN/GaN diaphragm-based pressure sensor with direct high performance piezoelectric transduction mechanism von Dzuba, J., Vanko, G., Držík, M., Rýger, I., Kutiš, V., Zehetner, J., Lalinský, T.

Volltext

Stress investigation of the AlGaN/GaN micromachined circular diaphragms of a pressure sensor von Dzuba, J, Vanko, G, Dr ík, M, Rýger, I, Vallo, M, Kutiš, V, Haško, D, Choleva, P, Lalinský, T

Volltext

High temperature current transport in gate oxides based (GaN)/AlGaN/GaN Schottky diodes von Osvald, J., Lalinský, T., Vanko, G.

Volltext

Mutual compatibility of AlGaN HEMT and HTS (YBCO) technology von Chromik, Š, Lalinský, T, Dobro ka, E, Gierlowski, P, Štrbík, V, Dujavová, A, Španková, M

Volltext

Pressure and temperature dependence of GaN/AlGaN high electron mobility transistor based sensors on a sapphire membrane von Edwards, M. J., Le Boulbar, E. D., Vittoz, S., Vanko, G., Brinkfeldt, K., Rufer, L., Johander, P., Lalinský, T., Bowen, C. R., Allsopp, D. W. E.

Volltext

Some peculiarities at preparation of Bi4Ti3O12 films for bolometric applications von Chromik, Š., Španková, M., Talacko, M., Dobročka, E., Lalinský, T.

Volltext

LSMO thin films with high metal-insulator transition temperature on buffered SOI substrates for uncooled microbolometers von CHROMIK, Š, STRBIK, V, CHOLEVA, P, DOBROCKA, E, ROCH, T, ROSOVA, A, SPANKOVA, M, LALINSKY, T, VANKO, G, LOBOTKA, P, RALBOVSKY, M

Volltext

Stability of AlGaN/GaN heterostructures after hydrogen plasma treatment von Babchenko, O., Dzuba, J., Lalinský, T., Vojs, M., Vincze, A., Ižák, T., Vanko, G.

Volltext

AlGaN/GaN high electron mobility transistors with nickel oxide based gates formed by high temperature oxidation von Lalinský, T., Vanko, G., Vallo, M., Dobročka, E., Rýger, I., Vincze, A.

Volltext

AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors with 4 nm thick Al2O3 gate oxide von Gregušová, D, Stoklas, R, Čičo, K, Lalinský, T, Kordoš, P

Volltext

Effect of bias conditions on pressure sensors based on AlGaN/GaN High Electron Mobility Transistor von Le Boulbar, E.D., Edwards, M.J., Vittoz, S., Vanko, G., Brinkfeldt, K., Rufer, L., Johander, P., Lalinský, T., Bowen, C.R., Allsopp, D.W.E.

Volltext

Thermo-mechanical analysis of uncooled La0.67Sr0.33MnO3 microbolometer made on circular SOI membrane von Lalinský, T., Dzuba, J., Vanko, G., Kutiš, V., Paulech, J., Gálik, G., Držík, M., Chromik, Š., Lobotka, P.

Volltext

Iridium oxides based gate interface of AlGaN/GaN high electron mobility transistors formed by high temperature oxidation von Lalinský, T., Vallo, M., Vanko, G., Dobročka, E., Vincze, A., Osvald, J., Rýger, I., Dzuba, J.

Volltext

Micromachined membrane structures for pressure sensors based on AlGaN/GaN circular HEMT sensing device von Lalinský, T., Hudek, P., Vanko, G., Dzuba, J., Kutiš, V., Srnánek, R., Choleva, P., Vallo, M., Držík, M., Matay, L., Kostič, I.

Volltext

The improved performance of GaAs micromachined power sensor microsystem von Lalinský, T, Haščı́k, Š, Mozolová, Ž, Burian, E, Držı́k, M

Volltext

Thermo-mechanical analysis of uncooled La^sub 0.67^Sr^sub 0.33^MnO^sub 3^ microbolometer made on circular SOI membrane von Lalinský, T, Dzuba, J, Vanko, G, Kutiš, V, Paulech, J, Gálik, G, Držík, M, Chromik, Š, Lobotka, P

Volltext

Piezoelectric response of AlGaN/GaN-based circular-HEMT structures von Lalinský, T., Držík, M., Vanko, G., Vallo, M., Kutiš, V., Bruncko, J., Haščík, Š., Jakovenko, J., Husák, M.

Volltext

Laser ablated ZnO layers for ALGaN/GaN HEMT passivation von Vanko, G., Vallo, M., Bruncko, J., Lalinský, T.

Volltext

Thermal actuation of a GaAs cantilever beam von Lalinský, T, Burian, E, Drzík, M, Hascík, S, Mozolová, Z, Kuzmík, J

Volltext

Impact of ZnO gate interfacial layer on piezoelectric response of AlGaN/GaN C-HEMT based ring gate capacitor von Lalinský, T., Vanko, G., Vallo, M., Držík, M., Bruncko, J., Jakovenko, J., Kutiš, V., Rýger, I., Haščík, Š., Husák, M.

Volltext