Shopping motivations on Internet: A study based on utilitarian and hedonic value von To, Pui-Lai, Liao, Chechen, Lin, Tzu-Hua

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High-mobility pentacene organic thin-film transistors achieved by reducing remote phonon scattering and surface-roughness scattering von Han, Chuan Yu, Tang, Wing Man, Lai, Pui-To

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Repair of Oxygen Vacancies and Improvement of HfO2/MoS2 Interface by NH3-Plasma Treatment von Zhao, Xinyuan, Xu, Jingping, Liu, Lu, Lai, Pui-To, Tang, Wing-Man

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Effect of dopant redistribution in gate electrode on surface plasmon resonance in InGaZnO thin-film transistors von Su, Hui, Tang, Wing Man, Lai, Pui To

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Improved Electrical Performance of Multilayer MoS2 Transistor With NH3-Annealed ALD HfTiO Gate Dielectric von Ming Wen, Jingping Xu, Lu Liu, Pui-To Lai, Wing-Man Tang

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Exploring knowledge sharing in virtual communities von Liao, Chechen, To, Pui-Lai, Hsu, Fang-Chih

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Improved Interfacial and Electrical Properties of MoS2 Transistor With High/Low-Temperature Grown Hf0.5Al0.5O as Top-Gate Dielectric von Zhao, Xin-Yuan, Xu, Jing-Ping, Liu, Lu, Lai, Pui-To, Tang, Wing-Man

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Improved Interfacial and Electrical Properties of GaAs MOS Capacitor With LaON/TiON Multilayer Composite Gate Dielectric and LaON as Interfacial Passivation Layer von Lu, Han-Han, Liu, Lu, Xu, Jing-Ping, Lai, Pui-To, Tang, Wing-Man

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Tailoring the Band Alignment of GaxZn1‐xO/InGaZnO Heterojunction for Modulation‐Doped Transistor Applications von Zhang, Yi‐Yu, Qian, Ling‐Xuan, Ge, Wan‐Bing, Lai, Pui‐To, Liu, Xing‐Zhao

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Improved interfacial and electrical properties of HfLaON gate dielectric Ge MOS capacitor by NbON/Si dual passivation layer and fluorine incorporation von Huang, Yong, Xu, Jing-Ping, Liu, Lu, Lai, Pui-To, Tang, Wing-Man

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Improved interfacial and electrical properties of Ge MOS capacitor with ZrON/TaON multilayer composite gate dielectric by using fluorinated Si passivation layer von Huang, Yong, Xu, Jing-Ping, Liu, Lu, Cheng, Zhi-Xiang, Lai, Pui-To, Tang, Wing-Man

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Improved electrical performance of multilayer MoS2 transistor by incorporating Al into host HfO2 as gate dielectric von Zhao, Xinyuan, Xu, Jingping, Liu, Lu, Lai, Pui-To, Tang, Wing-Man

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Electrical and Interfacial Properties of GaAs MOS Capacitors With La-Doped ZrON as Interfacial Passivation Layer von Lu, Han-Han, Xu, Jing-Ping, Liu, Lu, Lai, Pui-To, Tang, Wing-Man

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Improvements of Interfacial and Electrical Properties for Ge MOS Capacitor by Using TaYON Interfacial Passivation Layer and Fluorine Incorporation von Huang, Yong, Xu, Jing-Ping, Liu, Lu, Cheng, Zhi-Xiang, Lai, Pui-To, Tang, Wing-Man

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Electrical Properties of HfTiON Gate-Dielectric GaAs Metal-Oxide-Semiconductor Capacitor With AlON as Interlayer von Wang, Li-Sheng, Liu, Lu, Xu, Jing-Ping, Zhu, Shu-Yan, Huang, Yuan, Lai, Pui-To

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Impact of Nitrogen Incorporation on the Interface Between Ge and La2O3 or Y2O3 Gate Dielectric: A Study on the Formation of Germanate von Cheng, Zhi-Xiang, Liu, Lu, Jing-Ping, Xu, Huang, Yong, Pui-To Lai, Wing-Man, Tang

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Plasma-Nitrided Ga2O3(Gd2O3) as Interfacial Passivation Layer for InGaAs Metal-Oxide- Semiconductor Capacitor With HfTiON Gate Dielectric von Li-Sheng Wang, Jing-Ping Xu, Lu Liu, Han-Han Lu, Pui-To Lai, Wing-Man Tang

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Comprehensive investigation on CF4/O2-plasma treating the interfaces of stacked gate dielectric in MoS2 transistors von Song, Xingjuan, Xu, Jingping, Liu, Lu, Lai, Pui-To

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Anti-Screening Effect of Gate-Electrode Holes on Remote Phonon Scattering in InGaZnO Thin-Film Transistors von Su, Hui, Tang, Wing Man, Lai, Pui To

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Enhanced screening on remote phonon scattering in InGaZnO thin-film transistor by using Ge gate electrode von Su, Hui, Tang, Wing Man, Lai, Pui To

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