Quality Monitoring Using Principal Component Analysis and Fuzzy Logic Application in Continuous Casting Process von Bouhouche, Salah, Lahreche, Malek, Moussaoui, Abdelkrim, Bast, Jurgen

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Ultrathin AlN‐Based HEMTs Grown on Silicon Substrate by NH3‐MBE von Rennesson, Stephanie, Leroux, Mathieu, Al Khalfioui, Mohamed, Nemoz, Maud, Chenot, Sébastien, Massies, Jean, Largeau, Ludovic, Dogmus, Ezgi, Zegaoui, Malek, Medjdoub, Farid, Semond, Fabrice

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Optical characterization by photoreflectance of GaN after its partial thermal decomposition von Malek, W., Kahouli, A., Bouzidi, M., Chaaben, N., Alshammari, Abdullah S., Salvestrini, J.P., Rebey, A.

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Above 600 mS/mm Transconductance with 2.3 A/mm Drain Current Density AlN/GaN High-Electron-Mobility Transistors Grown on Silicon von Medjdoub, Farid, Zegaoui, Malek, Waldhoff, Nicolas, Grimbert, Bertrand, Rolland, Nathalie, Rolland, Paul-Alain

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Adsorption performance and mechanism of anionic MO dye by the adsorbent polymeric Amberlite®IRA-410 resin from environment wastewater: Equilibrium kinetic and thermodynamic studies... von Elabboudi, Maryem, Bensalah, Jaouad, Amri, Abdelhay El, Azzouzi, Nabila EL, Srhir, Bousalham, lebkiri, Ahmed, Zarrouk, Abdelkader, Rifi, El Housseine

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Experimental Design, Equilibrium Modeling and Kinetic Studies on the Adsorption of Methylene Blue by Adsorbent: Activated Carbon from Durian Shell Waste von Tran, Quoc Toan, Đo, Tra Huong, Ha, Xuan Linh, Duong, Thi Tu Anh, Chu, Manh Nhuong, Vu, Van Nhuong, Chau, Hung Dung, Tran, Thi Kim Ngan, Song, Phomthavongsy

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Polarization‐Graded High‐Electron‐Mobility Transistors for Improved Johnson's Figure of Merit von Venkatesan, Nivedhita, Silva‐Oelker, Gerardo, Turner, Wesley, Moon, Jeong‐Sun, Fay, Patrick

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LA TRADUCCION Y EL HISPANISMO ARGELINO. SITUACION Y PERSPECTIVAS von Mouffok, Nafissa

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Notes bibliographiques

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