Output power density of 5.1/mm at 18 GHz with an AlGaN/GaN HEMT on Si substrate von Ducatteau, D., Minko, A., Hoel, V., Morvan, E., Delos, E., Grimbert, B., Lahreche, H., Bove, P., Gaquiere, C., De Jaeger, J.C., Delage, S.

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Growth of high-quality GaN by low-pressure metal-organic vapour phase epitaxy (LP-MOVPE) from 3D islands and lateral overgrowth von Lahrèche, H, Vennéguès, P, Beaumont, B, Gibart, P

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Optimisation of AlN and GaN growth by metalorganic vapour-phase epitaxy (MOVPE) on Si (1 1 1) von Lahrèche, H, Vennéguès, P, Tottereau, O, Laügt, M, Lorenzini, P, Leroux, M, Beaumont, B, Gibart, P

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Thermal resistance of AlGaN/GaN HEMTs on SopSiC composite substrate von DEFRANCE, N, DOUVRY, Y, HOEL, V, GERBEDOEN, J.-C, SOLTANI, A, ROUSSEAU, M, DE JAEGER, J. C, LANGER, R, LAHRECHE, H

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Photoreflectance study of GaAsSb ∕ InP heterostructures von Chouaib, H., Bru-Chevallier, C., Guillot, G., Lahreche, H., Bove, P.

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AlGaN-GaN HEMTs on Si with power density performance of 1.9 W/mm at 10 GHz von Minko, A., Hoel, V., Morvan, E., Grimbert, B., Soltani, A., Delos, E., Ducatteau, D., Gaquiere, C., Theron, D., De Jaeger, J.C., Lahreche, H., Wedzikowski, L., Langer, R., Bove, P.

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Electrical Performance of GaN Schottky Rectifiers on Si Substrates von Voss, L., Pearton, S. J., Ren, F., Bove, P., Lahreche, H., Thuret, J.

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Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy von Feltin, Eric, Beaumont, B., Laügt, M., de Mierry, P., Vennéguès, P., Lahrèche, H., Leroux, M., Gibart, P.

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First microwave power performance of AlGaN/GaN HEMTs on SopSiC composite substrate von Hoel, V., Defrance, N., De Jaeger, J.C., Gerard, H., Gaquiere, C., Lahreche, H., Langer, R., Wilk, A., Lijadi, M., Delage, S.

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Phase separation in metalorganic vapor-phase epitaxy AlxGa(1−x)N films deposited on 6H–SiC von Vennéguès, P., Lahrèche, H.

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Photoreflectance spectroscopy for the study of GaAsSb/InP heterojunction bipolar transistors von Bru-Chevallier, C., Chouaib, H., Arcamone, J., Benyattou, T., Lahreche, H., Bove, P.

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Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators von Faucher, Marc, Grimbert, Bertrand, Cordier, Yvon, Baron, Nicolas, Wilk, Arnaud, Lahreche, Hacène, Bove, Philippe, François, Marc, Tilmant, Pascal, Gehin, Thomas, Legrand, Christiane, Werquin, Matthieu, Buchaillot, Lionel, Gaquière, Christophe, Théron, Didier

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Microtubule-associated protein 6 mediates neuronal connectivity through Semaphorin 3E-dependent signalling for axonal growth von Deloulme, Jean-Christophe, Gory-Fauré, Sylvie, Mauconduit, Franck, Chauvet, Sophie, Jonckheere, Julie, Boulan, Benoit, Mire, Erik, Xue, Jing, Jany, Marion, Maucler, Caroline, Deparis, Agathe A., Montigon, Olivier, Daoust, Alexia, Barbier, Emmanuel L., Bosc, Christophe, Deglon, Nicole, Brocard, Jacques, Denarier, Eric, Le Brun, Isabelle, Pernet-Gallay, Karin, Vilgrain, Isabelle, Robinson, Phillip J., Lahrech, Hana, Mann, Fanny, Andrieux, Annie

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The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy von Haffouz, S., Lahrèche, H., Vennéguès, P., de Mierry, P., Beaumont, B., Omnès, F., Gibart, P.

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Static measurements of GaN MESFETs on (111) Si substrates von Hoël, V, Guhel, Y, Boudart, B, Gaquière, C, De Jaeger, J C, Lahrèche, H, Gibart, P

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Comparison between TiAl and TiAlNiAu ohmic contacts to n-type GaN von BOUDART, B, TRASSAERT, S, WALLART, X, PESANT, J. C, YARADOU, O, THERON, D, CROSNIER, Y, LAHRECHE, H, OMNES, F

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Comparative study on stress in AlGaN/GaN HEMT structures grown on 6H-SiC, Si and on composite substrates of the 6H-SiC/poly-SiC and Si/poly-SiC von Guziewicz, M, Kaminska, E, Piotrowska, A, Golaszewska, K, Domagala, J Z, Poisson, M-A, Lahreche, H, Langer, R, Bove, P

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Growth of GaN on (1 1 1) Si: a route towards self-supported GaN von Lahrèche, H., Nataf, G., Feltin, E., Beaumont, B., Gibart, P.

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Near-Band Gap Selective Photoluminescence in Wurtzite GaN von Neu, G., Teisseire, M., Beaumont, B., Lahreche, H., Gibart, P.

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Selective photoluminescence spectroscopy of shallow levels in wide band gap semiconductors von Neu, G, Teisseire, M, Lemasson, P, Lahreche, H, Grandjean, N, Semond, F, Beaumont, B, Grzegory, I, Porowski, S, Triboulet, R

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