Critical impact of Ehrlich–Schwöbel barrier on GaN surface morphology during homoepitaxial growth von Kaufmann, Nils. A.K., Lahourcade, L., Hourahine, B., Martin, D., Grandjean, N.

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Defect structure in heteroepitaxial semipolar () (Ga, Al)N von Arroyo Rojas Dasilva, Y, Chauvat, M P, Ruterana, P, Lahourcade, L, Monroy, E, Nataf, G

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Plasma-assisted molecular-beam epitaxy of AlN(112¯2) on m sapphire von Lahourcade, L., Bellet-Amalric, E., Monroy, E., Abouzaid, M., Ruterana, P.

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Influence of deposition conditions on nanocrystalline InN layers synthesized on Si(1 1 1) and GaN templates by RF sputtering von Valdueza-Felip, S., Naranjo, F.B., González-Herráez, M., Lahourcade, L., Monroy, E., Fernández, S.

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Ga kinetics in plasma-assisted molecular-beam epitaxy of GaN(112¯2): Effect on the structural and optical properties von Lahourcade, L., Renard, J., Gayral, B., Monroy, E., Chauvat, M. P., Ruterana, P.

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Interband and intersubband optical characterization of semipolar ( 11 2 ¯ 2 ) -oriented GaN/AlN multiple-quantum-well structures von Lahourcade, L., Kandaswamy, P. K., Renard, J., Ruterana, P., Machhadani, H., Tchernycheva, M., Julien, F. H., Gayral, B., Monroy, E.

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Morphology and strain of self-assembled semipolar GaN quantum dots in (112¯2) AlN von Dimitrakopulos, G. P., Kalesaki, E., Kioseoglou, J., Kehagias, Th, Lotsari, A., Lahourcade, L., Monroy, E., Häusler, I., Kirmse, H., Neumann, W., Jurczak, G., Young, T. D., Dłużewski, P., Komninou, Ph, Karakostas, Th

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Plasma-assisted MBE growth of (11$ bar 2 $2)-oriented GaN/AlN quantum wells on m-sapphire von Lahourcade, L., Renard, J., Kandaswamy, P. K., Gayral, B., Monroy, E.

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P-type doping of semipolar GaN(11$ bar 2 $2) by plasma-assisted molecular-beam epitaxy von Das, A., Lahourcade, L., Pernot, J., Valdueza-Felip, S., Ruterana, P., Laufer, A., Eickhoff, M., Monroy, E.

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Novel InN/InGaN multiple quantum well structures for slow-light generation at telecommunication wavelengths von Naranjo, F. B., Kandaswamy, P. K., Valdueza-Felip, S., Lahourcade, L., Calvo, V., González-Herráez, M., Martín-López, S., Corredera, P., Monroy, E.

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Interfacial structure of semipolar AlN grown on m-plane sapphire by MBE von Kehagias, Th, Lahourcade, L., Lotsari, A., Monroy, E., Dimitrakopulos, G. P., Komninou, Ph

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Mg doping and its effect on the semipolar GaN ( 11 2 ¯ 2 ) growth kinetics von Lahourcade, L., Pernot, J., Wirthmüller, A., Chauvat, M. P., Ruterana, P., Laufer, A., Eickhoff, M., Monroy, E.

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Earth-abundant ZnSnxGe1−xN2 alloys as potential photovoltaic absorber materials von Coronel, N. C., Lahourcade, L., Delaney, K. T., Shing, A. M., Atwater, H. A.

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Stranski-Krastanow growth of ( 11 2 ¯ 2 ) -oriented GaN/AlN quantum dots von Lahourcade, L., Valdueza-Felip, S., Kehagias, T., Dimitrakopulos, G. P., Komninou, P., Monroy, E.

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Ga kinetics in plasma-assisted molecular-beam epitaxy of Ga N ( 11 2 ¯ 2 ) : Effect on the structural and optical properties von Lahourcade, L., Renard, J., Gayral, B., Monroy, E., Chauvat, M. P., Ruterana, P.

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Morphology and strain of self-assembled semipolar GaN quantum dotsin ( 11 2 ¯ 2 ) AlN von Dimitrakopulos, G. P., Kalesaki, E., Kioseoglou, J., Kehagias, Th, Lotsari, A., Lahourcade, L., Monroy, E., Häusler, I., Kirmse, H., Neumann, W., Jurczak, G., Young, T. D., Dłużewski, P., Komninou, Ph, Karakostas, Th

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Plasma-assisted molecular-beam epitaxy of Al N ( 11 2 ¯ 2 ) on m sapphire von Lahourcade, L., Bellet-Amalric, E., Monroy, E., Abouzaid, M., Ruterana, P.

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Molecular beam epitaxy of semipolar AlN() and GaN() on m-sapphire von Lahourcade, Lise, Bellet-Amalric, Edith, Monroy, Eva, Chauvat, Marie Pierre, Ruterana, Pierre

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Interfacial structure of semipolar AIN grown on m-plane sapphire by MBE von KEHAGIAS, Th, LAHOURCADE, L, LOTSARI, A, MONROY, E, DIMITRAKOPULOS, G. P, KOMNINOU, Ph

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Plasma-assisted MBE growth of (1122)-oriented GaN/AIN quantum wells on m-sapphire von LAHOURCADE, L, RENARD, J, KANDASWAMY, P. K, GAYRAL, B, MONROY, E

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