Electrical characteristics of Al/SiO2/n-Si tunnel diodes with an oxide layer grown by rapid thermal oxidation von DEPAS, M, VAN MEIRHAEGHE, R. L, LAFLERE, W. H, CARDON, F

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On the relationship between interfacial defects and Schottky barrier height in Ag, Au, and Al/n-GaAs contacts von VAN DE WALLE, R, VAN MEIRHAEGHE, R. L, LAFLERE, W. H, CARDON, F

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Influence of defect passivation by hydrogen on the Schottky barrier height of GaAs and InP contacts von Van Meirhaeghe, R. L., Laflere, W. H., Cardon, F.

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A detailed XPS study of the rare earth compounds EuS and EuF3 von Vercaemst, R., Poelman, D., Fiermans, L., Van Meirhaeghe, R.L., Laflère, W.H., Cardon, F.

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On the difference in apparent barrier height as obtained from capacitance-voltage and current-voltage-temperature measurements on Al/ p-InP Schottky barriers von Song, Y.P., Van Meirhaeghe, R.L., Laflère, W.H., Cardon, F.

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Spectral shifts in thin film electroluminescent devices: an interference effect von Poelman, D, Meirhaeghe, R L Van, Laflere, W H, Cardon, F

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Influence of the growth conditions on the properties of CaS:Eu electroluminescent thin films von Poelman, D., Vercaemst, R., Van Meirhaeghe, R.L., Laflère, W.H., Cardon, F.

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On the relationship between the surface composition of the substrate and the Schottky barrier height in Au/n-CdTe contacts von VAN MEIRHAEGHE, R. L, VAN DE WALLE, R, LAFLERE, W. H, CARDON, F

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A quantitative analysis of capacitance peaks in the impedance of Al/SiOx/p-Si tunnel diodes von Depas, M, Meirhaeghe, R L Van, Laflere, W H, Cardon, F

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The influence of Se-coevaporation on the emission spectra of CaS:Eu and SrS:Ce thin film electroluminescent devices von Poelman, D., Vercaemst, R., Van Meirhaeghe, R.L., Laflère, W.H., Cardon, F.

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On interfacial charges in the oxide layer of mis-type Ag- and Au- n GaAs Schottky barriers von Van Meirhaeghe, R.L., Laflère, W.H., Cardon, F.

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Current-voltage characteristic of Ti-pSi metal-oxide-semiconductor diodes von HANSELAER, P. L, LAFLERE, W. H, VAN MEIRHAEGHE, R. L, CARDON, F

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Large barrier tunnel metal-insulator-semiconductor structures von Hanselaer, P L, Meirhaeghe, R L Van, Laflere, W H, Cardon, F

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An XPS study of the dopants' valence states and the composition of CaS1 − xSex:Eu and SrS1 − xSex:Ce thin film electroluminescent devices von Vercaemst, R., Poelman, D., Van Meirhaeghe, R.L., Fiermans, L., Laflère, W.H., Cardon, F.

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On the temperature dependence of the Mott–Schottky characteristics of high-barrier Ti– p -Si metal-insulator-semiconductor diodes von Lootens, D. U., Hanselaer, P. L., Laflère, W. H., Van Meirhaeghe, R. L., Cardon, F.

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Tunnel oxides grown by rapid thermal oxidation von Depas, M., Van Meirhaeghe, R.L., Laflère, W.H., Cardon, F.

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The influence of a HF and an annealing treatment on the barrier height of p- and n-type Si MIS structures von Hanselaer, P. L., Lafl re, W. H., Meirhaeghe, R. L., Cardon, F.

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A ballistic electron emission microscopy (BEEM) study of the barrier height change of Au/n-GaAs Schottky contacts due to mechanical polishing von Everaert, J L, Meirhaeghe, R L Van, Laflere, W H, Cardon, F

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Sputter-induced damage in Al/n-GaAs and Al/p-GaAs Schottky barriers von Vandenbroucke, D A, Meirhaeghe, R L van, Laflere, W H, Cardon, F

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A study of the electrical and photovoltaic properties of magnetron sputtered Ti/ p-InP Schottky barriers von Van Meirhaeghe, R.L., Van den Berghe, L.M.O., Laflère, W.H., Cardon, F.

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