Application of hardness-by-design methodology to radiation-tolerant ASIC technologies von Lacoe, R.C., Osborn, J.V., Koga, R., Brown, S., Mayer, D.C.

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Improving Integrated Circuit Performance Through the Application of Hardness-by-Design Methodology von Lacoe, R.C.

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Implications of radiation-induced dopant deactivation for npn bipolar junction transistors von Witczak, S.C., Lacoe, R.C., Shaneyfelt, M.R., Mayer, D.C., Schwank, J.R., Winokur, P.S.

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Dose-rate sensitivity of modern nMOSFETs von Witczak, S.C., Lacoe, R.C., Osborn, J.V., Hutson, J.M., Moss, S.C.

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Influence of the lightly doped drain resistance on the worst-case hot-carrier stress condition for NMOS devices von King, Everett E, Lacoe, Ronald C, Wang-Ratkovic, Janet

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Reliability enhancement in high-performance MOSFETs by annular transistor design von Mayer, D.C., Lacoe, R.C., King, E.E., Osborn, J.V.

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A single event latchup suppression technique for COTS CMOS ICs von Spratt, J.P., Pickel, J.C., Leadon, R.E., Lacoe, R.C., Moss, S.C., LaLumondiere, S.D.

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Wavelength dependence of transient laser-induced latchup in epi-CMOS test structures von LaLumondiere, S.D., Koga, R., Osborn, J.V., Mayer, D.C., Lacoe, R.C., Moss, S.C.

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Geometric component of charge pumping current in nMOSFETs due to low-temperature irradiation von Witczak, S.C., King, E.E., Saks, N.S., Lacoe, R.C., Shaneyfelt, M.R., Hash, G.L., Hjalmarson, H.P., Mayer, D.C.

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Charge separation technique for metal–oxide–silicon capacitors in the presence of hydrogen deactivated dopants von Witczak, Steven C., Winokur, Peter S., Lacoe, Ronald C., Mayer, Donald C.

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New understanding of LDD NMOS hot-carrier degradation and device lifetime at cryogenic temperatures von Wang-Ratkovic, Janet, Lacoe, Ronald C., MacWilliams, Kenneth P., Song, Miryeong, Brown, Stephanie, Yabiku, Garenn

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Annular segmented MOSFET von LACOE RONALD C, MAYER DONALD C, KING EVERETT E, OSBORN JON V

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Annular segmented MOSFET von Mayer, Donald C, Osborn, Jon V, Lacoe, Ronald C, King, Everett E

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Annular segmented MOSFET von LACOE RONALD C, MAYER DONALD C, KING EVERETT E, OSBORN JON V

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Introduction to the Special Issue on the 2009 International Reliability Physics Symposium von Stathis, James H., Suehle, John H., Lacoe, Ronald C., Moore, Thomas M.

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