Advanced Modeling and Simulation of Multilayer Spin-Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling von Bendra, Mario, Orio, Roberto Lacerda de, Selberherr, Siegfried, Goes, Wolfgang, Sverdlov, Viktor

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Towards Efficient SOT-Assisted STT-MRAM Cell Switching Using Reinforcement Learning von Ender, Johannes, de Orio, Roberto Lacerda, Gös, Wolfgang, Sverdlov, Viktor

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Interconnect reliability dependence on fast diffusivity paths von Ceric, Hajdin, de Orio, Roberto Lacerda, Selberherr, Siegfried

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Microstructural impact on electromigration: A TCAD study von Ceric, Hajdin, de, Orio, Zisser, Wolfhard, Selberherr, Siegfried

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The Effect of Microstructure on Electromigration-Induced Failure Development von Lacerda de Orio, Roberto, Ceric, Hajdin, Cervenka, Johann, Selberherr, Siegfried

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Analysis of Electromigration in Dual-Damascene Interconnect Structures von Lacerda de Orio, Roberto, Carniello, Sara, Ceric, Hajdin, Selberherr, Siegfried

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Influence of Current Redistribution in Switching Models for Perpendicular STT-MRAM von Fiorentini, Simone, Lacerda de Orio, Roberto, Selberherr, Siegfried, Ender, Johannes, Goes, Wolfgang, Sverdlov, Viktor

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Process and reliability of SF6/O2 plasma etched copper TSVs von Filipovic, Lado, de Orio, Roberto Lacerda, Selberherr, Siegfried

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A Comprehensive TCAD Approach for Assessing Electromigration Reliability of Modern Interconnects von Ceric, H., de Orio, R.L., Cervenka, J., Selberherr, S.

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Formation and movement of voids in copper interconnect structures von de Orio, R. L., Selberherr, S.

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Electromigration failure development in modern dual-damascene interconnects von de Orio, R. L., Ceric, H., Cervenka, J., Selberherr, S.

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Strain-induced anisotropy of electromigration in copper interconnect von de Orio, R.L., Ceric, H., Selberherr, S.

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