UV-induced change in channel conductivity in AlGaN/GaN high electron mobility transistors to measure doping von Wohlfahrt, Markus, Uren, Michael J., Kaess, Felix, Laboutin, Oleg, Hirshy, Hassan, Kuball, Martin

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Optically active vacancies in GaN grown on Si substrates probed using a monoenergetic positron beam von Uedono, Akira, Fujishima, Tatsuya, Cao, Yu, Zhang, Yang, Yoshihara, Nakaaki, Ishibashi, Shoji, Sumiya, Masatomo, Laboutin, Oleg, Johnson, Wayne, Palacios, Tomás

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Annealing behaviors of vacancy-type defects near interfaces between metal contacts and GaN probed using a monoenergetic positron beam von Uedono, Akira, Fujishima, Tatsuya, Piedra, Daniel, Yoshihara, Nakaaki, Ishibashi, Shoji, Sumiya, Masatomo, Laboutin, Oleg, Johnson, Wayne, Palacios, Tomás

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Device Delay in GaN Transistors Under High Drain Bias Conditions von Lee, Dong Seup, Laboutin, Oleg, Cao, Yu, Johnson, Jerry Wayne, Beam, Edward, Ketterson, Andrew, Schuette, Michael L., Saunier, Paul, Palacios, Tomas

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Impact of \hbox\hbox Passivation Thickness in Highly Scaled GaN HEMTs von Dong Seup Lee, Laboutin, O., Yu Cao, Johnson, W., Beam, E., Ketterson, A., Schuette, M., Saunier, P., Palacios, T.

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210-GHz InAlN/GaN HEMTs With Dielectric-Free Passivation von Ronghua Wang, Guowang Li, Laboutin, O., Yu Cao, Johnson, W., Snider, G., Fay, P., Jena, D., Huili Xing

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Nanowire Channel InAlN/GaN HEMTs With High Linearity of gm and fT von DONG SEUP LEE, HAN WANG, SAUNIER, Paul, PALACIOS, Tomás, ALLEN HSU, AZIZE, Mohamed, LABOUTIN, Oleg, YU CAO, JOHNSON, Jerry Wayne, BEAM, Edward, KETTERSON, Andrew, SCHUETTE, Michael L

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220-GHz Quaternary Barrier InAlGaN/AlN/GaN HEMTs von Ronghua Wang, Guowang Li, Verma, J., Sensale-Rodriguez, B., Tian Fang, Jia Guo, Zongyang Hu, Laboutin, O., Yu Cao, Johnson, W., Snider, G., Fay, P., Jena, D., Huili Xing

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Quaternary Barrier InAlGaN HEMTs With f/f of 230/300 GHz von Ronghua Wang, Guowang Li, Karbasian, G., Jia Guo, Bo Song, Yuanzheng Yue, Zongyang Hu, Laboutin, O., Yu Cao, Johnson, W., Snider, G., Fay, P., Jena, D., Xing, H. G.

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Controlled Synthesis of AlN/GaN Multiple Quantum Well Nanowire Structures and Their Optical Properties von Qian, Fang, Brewster, Megan, Lim, Sung K, Ling, Yichuan, Greene, Christopher, Laboutin, Oleg, Johnson, Jerry W, Gradečak, Silvija, Cao, Yu, Li, Yat

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Impact of Al2O3 Passivation Thickness in Highly Scaled GaN HEMTs von DONG SEUP LEE, LABOUTIN, Oleg, YU CAO, JOHNSON, Wayne, BEAM, Edward, KETTERSON, Andrew, SAUNIER, Paul, PALACIOS, Tomás

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Differences in nucleation and properties of InN islands formed using two different deposition procedures von Laboutin, Oleg, Johnson, Wayne, Welser, Roger

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GaInN/GaN solar cells made without p-type material using oxidized Ni/Au Schottky electrodes von Chern, Kevin T., Allen, Noah P., Ciarkowski, Timothy A., Laboutin, Oleg A., Welser, Roger E., Guido, Louis J.

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InGaN Channel High-Electron-Mobility Transistors with InAlGaN Barrier and $f_{\text{T}}/f_{\text{max}}$ of 260/220 GHz von Wang, Ronghua, Li, Guowang, Karbasian, Golnaz, Guo, Jia, Faria, Faiza, Hu, Zongyang, Yue, Yuanzheng, Verma, Jai, Laboutin, Oleg, Cao, Yu, Johnson, Wayne, Snider, Gregory, Fay, Patrick, Jena, Debdeep, Xing, Huili (Grace)

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Trapping Phenomena in InAlN/GaN High Electron Mobility Transistors von Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Yang, Jiancheng, Ren, Fan, Lo, Chien-Fong, Laboutin, Oleg, Johnson, J. W., Pearton, S. J.

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Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions von Hwang, Ya-Shi, Liu, Lu, Ren, Fan, Polyakov, Alexander Y., Smirnov, N. B., Govorkov, A. V., Kozhukhova, E. A., Kolin, N. G., Boiko, V. M., Vereyovkin, S. S., Ermakov, V. S., Lo, Chien-Fong, Laboutin, Oleg, Cao, Y., Johnson, J. W., Kargin, N. I., Ryzhuk, R. V., Pearton, Stephen J.

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Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability von Liu, Lu, Lo, Chien-Fong, Xi, Yuyin, Ren, Fan, Pearton, Stephen J., Laboutin, Oleg, Cao, Yu, Johnson, J. Wayne, Kravchenko, Ivan I.

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Thermal Effects between Carbon-Doped GaN and AlGaN Back-Barrier in AlGaN/GaN HEMTs on Si (111) Substrates von Lo, Chien-Fong, Kao, Chen-Kai, Laboutin, Oleg, Marchand, Hugues, Pelzel, Rodney, Johnson, Wayne

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Vacancy clusters introduced by CF4-based plasma treatment in GaN probed with a monoenergetic positron beam von Uedono, Akira, Yoshihara, Nakaaki, Zhang, Yuhao, Sun, Min, Piedra, Daniel, Fujishima, Tatsuya, Ishibashi, Shoji, Sumiya, Masatomo, Laboutin, Oleg, Johnson, Wayne, Palacios, Tomás

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317 GHz InAlGaN/GaN HEMTs with extremely low on-resistance von Lee, Dong Seup, Laboutin, Oleg, Cao, Yu, Johnson, Wayne, Beam, Edward, Ketterson, Andrew, Schuette, Michael, Saunier, Paul, Kopp, David, Fay, Patrick, Palacios, Tomás

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