Optical and electrical characterization of aluminium doped ZnO layers von Major, C., Nemeth, A., Radnoczi, G., Czigany, Zs, Fried, M., Labadi, Z., Barsony, I.

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Characterization of ZnO structures by optical and X-ray methods von Petrik, P., Pollakowski, B., Zakel, S., Gumprecht, T., Beckhoff, B., Lemberger, M., Labadi, Z., Baji, Z., Jank, M., Nutsch, A.

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Highly conductive epitaxial ZnO layers deposited by atomic layer deposition von Baji, Zs, Lábadi, Z., Molnár, Gy, Pécz, B., Vad, K., Horváth, Z.E., Szabó, P.J., Nagata, T., Volk, J.

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Structure and morphology of aluminium doped Zinc-oxide layers prepared by atomic layer deposition von Baji, Zs, Lábadi, Z., Horváth, Z.E., Bársony, I.

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Temperature dependent in situ doping of ALD ZnO von Baji, Zs, Lábadi, Z., Horváth, Z. E., Fried, M., Szentpáli, B., Bársony, I.

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Post-selenization of stacked precursor layers for CIGS von Baji, Zs, Lábadi, Z., Molnár, Gy, Pécz, B., Tóth, A.L., Tóth, J., Csik, A., Bársony, I.

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ZnO layers deposited by Atomic Layer Deposition von Pécz, B, Baji, Zs, Lábadi, Z, Kovács, A

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Single step deposition of different morphology ZnO gas sensing films von NEMETH, A, HORVATH, E, LABADI, Z, FEDAK, L, BARSONY, I

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InAsSbP quantum dots grown by liquid phase epitaxy von Krier, A, Labadi, Z, Hammiche, A

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Effect of Hexagonal WO3 Morphology on NH3 Sensing von Takács, M., Dücső, Cs, Lábadi, Z., Pap, A.E.

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Growth of self-assembled PbSe quantum-dots on GaSb(100) by liquid phase epitaxy von Huang, X L, Labadi, Z, Hammiche, A, Krier, A

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Spectroscopic ellipsometry study of transparent conductive ZnO layers for CIGS solar cell applications von Németh, Á., Major, Cs, Fried, M., Lábadi, Z., Bársony, I.

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Oscillations and power-dependent hysteresis in reactive ZnO plasma von Nemeth, A, Labadi, Z, Toth, L, Barsony, I

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Photoluminescence from InAs quantum wells grown by liquid-phase epitaxy von KRIER, A, KRIER, S. E, LABADI, Z

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Investigation of the electronic structure of Cd4GeSe6 by photoelectrochemical and photoluminescence methods von KOVACH, S, NEMCSICS, A, LABADI, Z, MOTRYA, S

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Interface electroluminescence from InAs quantum well LEDs grown by rapid slider liquid phase epitaxy von Krier, A, Sherstnev, V V, Labadi, Z, Krier, S E, Gao, H H

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Near-infrared transmission measurements on InGaAsP/InP LED wafers von Rakovics, V., Balázs, J., Réti, I., Püspöki, S., Lábadi, Z.

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Novel material for an electrochemical solar cell von Nemcsics, Á., Kovács, S., Lábadi, Z., Hesse, K.-F., Czank, M., Turmezei, P., Motrya, S.

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High power InP/InGaAsP buried heterostructure laser for a wavelength of 1.15 μm von Rakovics, V., Serényi, M., Koltai, F., Püspöki, S., Lábadi, Z.

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Selective liquid-phase epitaxy growth of InxGa1-xAsyP1-y on structured GaAs(100) substrates von LABADI, Z, RAKOVICS, V, TOTH, A. L

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